JPH0922970A - Electronic component - Google Patents
Electronic componentInfo
- Publication number
- JPH0922970A JPH0922970A JP17090595A JP17090595A JPH0922970A JP H0922970 A JPH0922970 A JP H0922970A JP 17090595 A JP17090595 A JP 17090595A JP 17090595 A JP17090595 A JP 17090595A JP H0922970 A JPH0922970 A JP H0922970A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- metal substrate
- module
- heating element
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子機器等に用いられ
る電子部品の放熱構造に関し、詳細には発熱する発熱素
子が実装され、樹脂等により封止されたモジュール等の
電子部品における放熱構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat dissipation structure for electronic parts used in electronic equipment, and more particularly to a heat dissipation structure for electronic parts such as modules in which a heat generating element is mounted and sealed with resin or the like. Regarding
【０００２】[0002]
【従来の技術】電子部品には、モノリシックＩｃやその
周辺部品が集積化され、樹脂等により封止されると共に
端子が設けられた所謂モジュールと言われるものがあ
る。そして、モジュールはパワー素子等の発熱部品が実
装される場合がある。このようなモジュールには、発熱
素子から発生する熱の放散のためにヒートシンク（放熱
板）の取り付けが必要である。図４は、従来の発熱素子
を実装したモジュールの構成図である。2. Description of the Related Art Some electronic parts are so-called modules in which monolithic Ic and its peripheral parts are integrated, sealed with resin and provided with terminals. Then, a heat generating component such as a power element may be mounted on the module. In such a module, it is necessary to attach a heat sink (radiating plate) to dissipate the heat generated from the heating element. FIG. 4 is a block diagram of a module in which a conventional heating element is mounted.
【０００３】４０は発熱素子が実装されたモジュールで
ある。４１は発熱素子であるチップ状の集積回路（Ｉｃ
チップ）で、例えば電力増幅回路等が形成されている。
４２はＩｃチップ４１と外部回路との接続手段であるリ
ード４３とを接続するための金属細線であるボンディン
グワイヤである。４４は放熱部材である放熱板であり、
発熱素子であるＩｃチップ４１と密着している。４５は
Ｉｃチップ４１や放熱板４４をモールド（封止）するモ
ールド樹脂である。また、４６はモジュール４０その他
の電子部品等を装着する配線基板であり、４７は配線基
板４６上に形成された配線パターンである。Reference numeral 40 is a module in which a heating element is mounted. 41 is a chip-shaped integrated circuit (Ic
Chip), for example, a power amplifier circuit or the like is formed.
Reference numeral 42 is a bonding wire which is a thin metal wire for connecting the Ic chip 41 and the lead 43 which is a connecting means with an external circuit. 44 is a heat dissipation plate which is a heat dissipation member,
It is in close contact with the Ic chip 41 which is a heating element. Reference numeral 45 is a molding resin for molding (sealing) the Ic chip 41 and the heat dissipation plate 44. Reference numeral 46 is a wiring board on which the module 40 and other electronic components are mounted, and 47 is a wiring pattern formed on the wiring board 46.
【０００４】上記の構成によるモジュール４０は、モー
ルド樹脂４５によりモールドされたＩｃチップ４１から
の発熱を、Ｉｃチップ４１に密着された放熱板４４によ
り放熱している。In the module 40 having the above structure, the heat generated from the Ic chip 41 molded by the molding resin 45 is radiated by the heat radiating plate 44 which is in close contact with the Ic chip 41.
【０００５】[0005]
【発明が解決しようとする課題】上記によるモジュール
４０では、比較的簡単な機能の電子部品であっても、放
熱用の放熱板が必要なため高価となり、また放熱板の取
付により製造工程が複雑となるため、更に高価になって
しまう問題がある。本発明は、このような課題を解決す
ることを目的とする。In the module 40 according to the above, even an electronic component having a relatively simple function is expensive because a heat dissipation plate for heat dissipation is required, and the manufacturing process is complicated by mounting the heat dissipation plate. Therefore, there is a problem that it becomes more expensive. An object of the present invention is to solve such a problem.
【０００６】[0006]
【課題を解決するための手段】本発明はこのような課題
を解決するもので、発熱素子が実装され、封止材により
封止された電子部品において、前記発熱素子は、金属を
基材とする金属基板上に他の電子部品と共に実装され、
前記金属基板は放熱板としてなることを特徴とする。SUMMARY OF THE INVENTION The present invention is intended to solve such a problem, and in an electronic component in which a heating element is mounted and sealed with a sealing material, the heating element has a metal as a base material. Mounted on a metal board together with other electronic components,
The metal substrate serves as a heat dissipation plate.
【０００７】また、前記金属基板の前記発熱素子搭載面
の裏面側は、前記封止材から露出していることを特徴と
する。また、前記金属基板の前記発熱素子搭載面の裏面
側は、凹凸が設けられていることを特徴とする。また、
配線基板の実装時において、前記金属基板は、前記発熱
素子に対して前記配線基板から遠方位置側に設けられて
いることを特徴とする。Further, the back side of the heating element mounting surface of the metal substrate is exposed from the sealing material. Further, the back surface side of the heating element mounting surface of the metal substrate is provided with irregularities. Also,
When the wiring board is mounted, the metal board is provided on the side farther from the wiring board with respect to the heating element.
【０００８】[0008]
【作用】本発明によれば、発熱素子と他の電子部品は放
熱板と一体となっている金属を基材とする金属基板上に
実装されているので、放熱効率の向上と高密度実装化お
よび低価格化が図れる。また、発熱素子が金属基板に実
装され、そして、金属基板の発熱素子搭載面の裏面側が
封止材から露出されているので、放熱効率の向上が図れ
る。According to the present invention, since the heat generating element and the other electronic components are mounted on the metal substrate having the metal as a base material, which is integrated with the heat sink, the heat radiation efficiency is improved and the high density mounting is realized. And the price can be reduced. Further, since the heating element is mounted on the metal substrate and the back surface side of the heating element mounting surface of the metal substrate is exposed from the sealing material, the heat radiation efficiency can be improved.
【０００９】また、発熱素子が実装された金属基板の発
熱素子搭載面の裏面側に、凹凸が設けられているので放
熱板の表面積が大きくなり、放熱効率の向上が図れる。
また、発熱素子が実装された金属基板が、発熱素子に対
して配線基板の実装面より遠方位置側に設けられている
ので、配線基板による放熱効果の低下を防止できる。Further, since the unevenness is provided on the rear surface side of the heating element mounting surface of the metal substrate on which the heating elements are mounted, the surface area of the heat dissipation plate is increased, and the heat dissipation efficiency can be improved.
Further, since the metal substrate on which the heating element is mounted is provided on the side farther from the mounting surface of the wiring board with respect to the heating element, it is possible to prevent deterioration of the heat radiation effect of the wiring board.
【００１０】[0010]
【実施例】以下、図面を用いて本発明の実施例を説明す
る。図１は本発明の第１実施例に係るモジュールを示す
構成図である。図示のように、１０は発熱素子等が実装
され、樹脂で封止されたモジュールである。１１はモノ
リシックＩｃ等で形成され発熱素子であるチップ状の集
積回路（Ｉｃチップ）で、例えば電力増幅回路等が形成
されている。１３はモジュール１０の内部回路と外部回
路とを接続するリードフレームである。１４は熱伝導率
の良好な銅、アルミニュウム等の金属部材により形成さ
れ、放熱板と導体回路基板を兼用した金属基板である。
この金属基板１４の部品実装面（下面）には、エポキ
シ、ポリイミド等の部材により絶縁皮膜１８が形成さ
れ、その上（図示では金属基板１４の下端面）にはエッ
チング等の方法により導体回路１９が形成されている。
そして、この導体回路１９の各端子部分には、Ｉｃチッ
プ１１や図示されていない抵抗、コンデンサ等のディス
クリート部品等が実装されている。１２はＩｃチップ１
１のバンプ（接続端子）とモジュール１０の内部回路
（導体回路１９の所定箇所）とを接続するためのボンデ
ィングワイヤである。Embodiments of the present invention will be described below with reference to the drawings. 1 is a block diagram showing a module according to a first embodiment of the present invention. As shown in the figure, 10 is a module in which a heating element or the like is mounted and sealed with resin. Reference numeral 11 denotes a chip-shaped integrated circuit (Ic chip) which is a heating element and is formed of monolithic Ic or the like, for example, a power amplifier circuit or the like is formed. Reference numeral 13 is a lead frame that connects the internal circuit and the external circuit of the module 10. Reference numeral 14 denotes a metal substrate which is formed of a metal member such as copper and aluminum having a good thermal conductivity and which also serves as a heat dissipation plate and a conductor circuit substrate.
An insulating film 18 made of a material such as epoxy or polyimide is formed on the component mounting surface (lower surface) of the metal substrate 14, and a conductor circuit 19 is formed on the insulating film 18 (lower end surface of the metal substrate 14 in the figure) by etching or the like. Are formed.
Then, on each terminal portion of the conductor circuit 19, discrete components such as an Ic chip 11 and resistors (not shown) and capacitors are mounted. 12 is Ic chip 1
This is a bonding wire for connecting the bump 1 (connection terminal) and the internal circuit of the module 10 (a predetermined portion of the conductor circuit 19).
【００１１】また、放熱効果を高めるために、更に他の
部品に対して熱による悪影響を与えないために、金属基
板１４はモジュール１０におけるモジュール１０やその
他の電子部品等を実装する電子機器の配線基板１６から
離れた位置（図示モジュール１０の上部発熱部品に対し
て、配線基板１６から遠方位置側）に設けられており、
しかも上端面（放熱面）は後述するモジュール１０のパ
ッケージから露出されている。Further, in order to enhance the heat dissipation effect and to prevent the other components from being adversely affected by heat, the metal substrate 14 is a wiring of the electronic equipment for mounting the module 10 and other electronic components in the module 10. It is provided at a position away from the board 16 (a far side from the wiring board 16 with respect to the upper heat-generating component of the illustrated module 10),
Moreover, the upper end surface (heat dissipation surface) is exposed from the package of the module 10 described later.
【００１２】１５はモジュール１０のパッケージであ
り、モジュール１０の構成部品を封止するモールド樹脂
により形成される。また、１６はモジュール１０その他
の電子部品等を装着するセラミック等の絶縁板からなる
配線基板であり、配線基板１６の表面にはエッチング等
の方法により導体（銅等）による配線パターンが形成さ
れている。Reference numeral 15 denotes a package of the module 10, which is formed of a molding resin that seals the components of the module 10. Reference numeral 16 is a wiring board made of an insulating plate such as ceramic for mounting the module 10 and other electronic parts, and a wiring pattern made of a conductor (copper or the like) is formed on the surface of the wiring board 16 by a method such as etching. There is.
【００１３】上記構成によるモジュール１０によれば、
発熱素子であるＩｃチップ１１から発生する熱が、熱伝
導率の良い金属基板１４を伝導して、モールド樹脂１５
より露出されている金属基板１４の放熱面から外部へ放
熱される。上述のとおり本実施例によるモジュール１０
は、内部に発熱素子が実装され、熱伝導率のあまり良く
ない樹脂系部材で封止されているが、外部へ放熱面を露
出させている金属基板１４により発熱素子からの熱が効
率良く放熱されるので、放熱効率を向上させることがで
きる。また、金属基板１４の部品実装面に導体回路１９
が形成されているので、高密度実装化を実現することが
できる。According to the module 10 having the above structure,
The heat generated from the Ic chip 11, which is a heating element, conducts through the metal substrate 14 having a high thermal conductivity, and the mold resin 15
Heat is radiated to the outside from the more exposed heat radiating surface of the metal substrate 14. As described above, the module 10 according to the present embodiment
Has a heating element mounted inside and is sealed with a resin-based member having a poor thermal conductivity, but the heat from the heating element is efficiently radiated by the metal substrate 14 whose heat radiation surface is exposed to the outside. Therefore, the heat dissipation efficiency can be improved. Further, the conductor circuit 19 is provided on the component mounting surface of the metal substrate 14.
Since it is formed, high-density mounting can be realized.
【００１４】次に本発明の第２実施例を説明する。図２
は本発明の第２実施例に係るモジュールを示す構成図で
ある。なお、第１実施例と同様なものについては同一符
号を付し、その説明を省略する。図示のように、２０は
本実施例の発熱素子を実装したモジュールであり、２４
は放熱板と導体回路基板を兼用する金属基板である。本
実施例の第１実施例と相違する点は、この金属基板２４
の形状の違いである。即ち、金属基板２４は放熱面（金
属基板２４の上端面）をプレス加工、鋳造等により凹凸
が形成され、表面積が広くなっている。このため金属基
板２４の放熱能力が向上している。Next, a second embodiment of the present invention will be described. FIG.
FIG. 6 is a configuration diagram showing a module according to a second exemplary embodiment of the present invention. The same components as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted. As shown in the figure, 20 is a module in which the heating element of this embodiment is mounted, and 24
Is a metal board that also serves as a heat dissipation plate and a conductor circuit board. This metal substrate 24 is different from the first embodiment in this embodiment.
Is the difference in shape. That is, the heat dissipation surface (upper end surface of the metal substrate 24) of the metal substrate 24 is formed with irregularities by pressing, casting or the like, and the surface area is wide. Therefore, the heat dissipation capability of the metal substrate 24 is improved.
【００１５】上述のとおり本実施例によるモジュール２
０では、金属基板２４の放熱面に凹凸を形成し、表面積
を拡大しているので、放熱効率を向上させることができ
る。次に本発明の第３実施例を説明する。図３は本発明
の第３実施例に係るモジュールを示す構成図である。な
お、第１実施例と同様なものについては同一符号を付
し、その説明を省略する。As described above, the module 2 according to this embodiment
In No. 0, since unevenness is formed on the heat dissipation surface of the metal substrate 24 to increase the surface area, heat dissipation efficiency can be improved. Next, a third embodiment of the present invention will be described. FIG. 3 is a block diagram showing a module according to the third embodiment of the present invention. The same components as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
【００１６】図示のように、３０は本実施例の発熱素子
を実装したモジュールであり、３４は放熱板と導体回路
基板を兼用する金属基板である。本実施例の第１実施例
と相違する点は、この金属基板３４に対するモールド
（封止）構造の違いにある。即ち、金属基板３４はモー
ルド樹脂１５で完全に封止（放熱面も露出されていな
い）されている。これは、金属基板３４の放熱面を外部
へ露出させる構造では、モールド樹脂１５と金属基板３
４の境界面に剥離現象（パッケージクラック）を生じる
恐れがあるためで、本実施例ではこのパッケージクラッ
クを有効に防止できる。As shown in the figure, 30 is a module on which the heating element of this embodiment is mounted, and 34 is a metal substrate which also serves as a heat dissipation plate and a conductor circuit board. The difference between this embodiment and the first embodiment is the difference in the mold (sealing) structure for the metal substrate 34. That is, the metal substrate 34 is completely sealed with the mold resin 15 (the heat dissipation surface is not exposed). This is because in the structure in which the heat dissipation surface of the metal substrate 34 is exposed to the outside, the mold resin 15 and the metal substrate 3 are
This is because a peeling phenomenon (package crack) may occur at the boundary surface of No. 4, and this package crack can be effectively prevented in this embodiment.
【００１７】[0017]
【発明の効果】以上詳細に説明したように本発明に係る
電子部品によれば、発熱素子その他の電子部品が金属基
板上に実装されているので、特別な放熱部品を用いるこ
となく効率的に放熱でき、低コストで高密度実装化が図
れる。また、金属基板の部品搭載面の裏面側を封止材か
ら露出させているので、放熱し易くなり放熱効率が向上
する。As described in detail above, according to the electronic component of the present invention, since the heat generating element and other electronic components are mounted on the metal substrate, it is possible to efficiently use a special heat radiating component. Heat can be dissipated, and high-density mounting can be achieved at low cost. Further, since the back surface side of the component mounting surface of the metal substrate is exposed from the sealing material, it is easy to dissipate heat and the heat dissipation efficiency is improved.
【００１８】また、金属基板の部品搭載面の裏面側に凹
凸を設けて放熱面積を大きくしているので、放熱し易く
なり放熱効率が向上する。また、金属基板を、発熱部品
に対して電子機器等の配線基板より遠方位置側に設ける
ことにより配線基板側への放熱を抑えることができ、配
線基板に搭載された部品が熱により悪影響を受けること
を防止できる。Further, since the unevenness is provided on the back surface side of the component mounting surface of the metal substrate to increase the heat dissipation area, heat dissipation is facilitated and heat dissipation efficiency is improved. Also, by disposing the metal substrate on the side farther from the wiring board of the electronic device or the like with respect to the heat-generating component, it is possible to suppress heat radiation to the wiring substrate side, and the components mounted on the wiring substrate are adversely affected by heat Can be prevented.
【図１】本発明の第１実施例に係るモジュールを示す構
成図である。FIG. 1 is a configuration diagram showing a module according to a first embodiment of the present invention.
【図２】本発明の第２実施例に係るモジュールを示す構
成図である。FIG. 2 is a configuration diagram showing a module according to a second embodiment of the present invention.
【図３】本発明の第３実施例に係るモジュールを示す構
成図である。FIG. 3 is a configuration diagram showing a module according to a third exemplary embodiment of the present invention.
【図４】従来の発熱素子を実装したモジュールの構成図
である。FIG. 4 is a configuration diagram of a module in which a conventional heating element is mounted.
１０・・・・モジュール １１・・・・Ｉｃチップ １２・・・・ボンディングワイヤ １３・・・・リード １４・・・・金属基板 １５・・・・モールド樹脂 １６・・・・配線基板 １８・・・・絶縁皮膜 １９・・・・導体回路 10 ... Module 11 ... Ic chip 12 ... Bonding wire 13 ... Lead 14 ... Metal substrate 15 ... Mold resin 16 ... Wiring substrate 18 ... ..Insulating film 19 ... Conductor circuit
Claims (4)
された電子部品において、 前記発熱素子は、金属を基材とする金属基板上に他の電
子部品と共に実装され、前記金属基板は放熱板としてな
ることを特徴とする電子部品。1. An electronic component in which a heating element is mounted and sealed with a sealing material, wherein the heating element is mounted together with other electronic components on a metal substrate having a metal as a base material, and the metal substrate is An electronic component characterized by serving as a heat sink.
面側は、前記封止材から露出していることを特徴とする
請求項１記載の電子部品。2. The electronic component according to claim 1, wherein a rear surface side of the heating element mounting surface of the metal substrate is exposed from the sealing material.
面側は、凹凸が設けられていることを特徴とする請求項
１記載の電子部品。3. The electronic component according to claim 1, wherein irregularities are provided on a back surface side of the heating element mounting surface of the metal substrate.
板は、前記発熱素子に対して前記配線基板から遠方位置
側に設けられていることを特徴とする請求項１記載の電
子部品。4. The electronic component according to claim 1, wherein the metal substrate is provided on a side farther from the wiring board with respect to the heating element when the wiring board is mounted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17090595A JPH0922970A (en) | 1995-07-06 | 1995-07-06 | Electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17090595A JPH0922970A (en) | 1995-07-06 | 1995-07-06 | Electronic component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0922970A true JPH0922970A (en) | 1997-01-21 |
Family
ID=15913514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17090595A Pending JPH0922970A (en) | 1995-07-06 | 1995-07-06 | Electronic component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0922970A (en) |
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|---|---|---|---|---|
| JP2011023463A (en) * | 2009-07-14 | 2011-02-03 | Denso Corp | Semiconductor module |
| US8299603B2 (en) | 2007-01-22 | 2012-10-30 | Mitsubishi Electric Corporation | Power semiconductor device |
| WO2013114647A1 (en) * | 2012-01-31 | 2013-08-08 | 三菱電機株式会社 | Semiconductor device and method for manufacturing same |
| DE112016004423T5 (en) | 2015-09-29 | 2018-06-28 | Mitsubishi Electric Corporation | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| JP2019192847A (en) * | 2018-04-27 | 2019-10-31 | ルネサスエレクトロニクス株式会社 | Electronic device |
| CN110662372A (en) * | 2018-06-28 | 2020-01-07 | 阿尔派株式会社 | Electronic unit and method for manufacturing the same |
| JP2020129700A (en) * | 2014-04-09 | 2020-08-27 | ローム株式会社 | Semiconductor device |
-
1995
- 1995-07-06 JP JP17090595A patent/JPH0922970A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8299603B2 (en) | 2007-01-22 | 2012-10-30 | Mitsubishi Electric Corporation | Power semiconductor device |
| JP2011023463A (en) * | 2009-07-14 | 2011-02-03 | Denso Corp | Semiconductor module |
| US9449893B2 (en) | 2009-07-14 | 2016-09-20 | Denso Corporation | Semiconductor module |
| WO2013114647A1 (en) * | 2012-01-31 | 2013-08-08 | 三菱電機株式会社 | Semiconductor device and method for manufacturing same |
| JPWO2013114647A1 (en) * | 2012-01-31 | 2015-05-11 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
| TWI502695B (en) * | 2012-01-31 | 2015-10-01 | Mitsubishi Electric Corp | Semiconductor device and method for manufacturing the same |
| US9390995B2 (en) | 2012-01-31 | 2016-07-12 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
| JP2020129700A (en) * | 2014-04-09 | 2020-08-27 | ローム株式会社 | Semiconductor device |
| DE112016004423T5 (en) | 2015-09-29 | 2018-06-28 | Mitsubishi Electric Corporation | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| US10529643B2 (en) | 2015-09-29 | 2020-01-07 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
| JP2019192847A (en) * | 2018-04-27 | 2019-10-31 | ルネサスエレクトロニクス株式会社 | Electronic device |
| CN110662372A (en) * | 2018-06-28 | 2020-01-07 | 阿尔派株式会社 | Electronic unit and method for manufacturing the same |
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