JPH06132441A - Resin-sealed semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To dissipate heat with good efficiency even when a semiconductor element whose heat-generating amount is large is mounted. CONSTITUTION:A heat-dissipating device 10 composed of a metal sheet 11 on which metal protrusions 12 have been formed is sealed with a sealing resin 2 in a state that it has been bonded and fixed to the rear of a die pad 5 or that it has been bonded and fixed directly to the rear of a semiconductor element 1. At this time, the tip part of each metal protrusion 12 is constituted so as to be exposed to the surface of the sealing resin 2 formed on the rear surface of a semiconductor device Sa. Thereby, when the semiconductor device is mounted on an electric-circuit wiring board, heat from the semiconductor element 1 can be dissipated to the electric-circuit wiring board via the heat- dissipating device 10, and a small and high-density-mounting resin-sealed semiconductor device can be obtained at low costs.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device suitable for a surface mount type, in which even a high heat-generating semiconductor element can be resin-encapsulated by enhancing a heat dissipation effect. .

[0002]

2. Description of the Related Art Semiconductor devices used in electronic equipment such as workstations, personal computers, video cameras, CCDs, MDs, etc. are usually ceramic-sealed semiconductor devices or resin-sealed semiconductor devices. is there. A ceramic sealed semiconductor device is a PGA (Pin Grid Arr) in which electrode pins are attached to the bottom surface of a ceramic package.
ay) type semiconductor device or QFP (Quad Flat) in which the electrode lead is taken out from the side surface of the ceramic package.
A resin-encapsulated semiconductor device typified by a package) semiconductor device has electrode leads taken out from the side surface of the encapsulating resin, for example, a QFP type or TSOP (Thin Small Out) in which outer leads are processed into a gull wing shape.
SOJ (Small Outline J-B) in which outer leads are processed into a line package) type and a J type
A typical example is a surface mount type semiconductor device called an end package type.

FIG. 10 shows a cross-sectional side view of the conventional surface mount type resin-sealed semiconductor device having the gull wing-shaped outer leads. The symbol S indicates a resin-sealed semiconductor device as a whole. This resin-encapsulated semiconductor device S is arranged so as to correspond to these inner leads 6 and the die pad 5 that has been depressed, a plurality of inner leads 6 that are arranged along the peripheral edge portion with a predetermined interval width. Lead frame 3 composed of a plurality of outer leads 7 and the like
Of the semiconductor element 1 on the die pad 5 with the conductive adhesive 4
And a plurality of electrodes (not shown) of the semiconductor element 1 and inner ends of the inner leads 6 are connected by metal conductors 8, respectively, and the semiconductor element 1, the die pad 5 and the inner leads 6 are fixed. Including epoxy resin,
It is configured by sealing with a sealing resin 2 made of fused quartz or the like.

[0004]

The above-mentioned ceramic-encapsulated semiconductor device has been conventionally applied to a highly reliable semiconductor device for military use or space use, and also an industrial semiconductor device having high-speed signal transmission or high heat generation. Had been applied to. This ceramic-encapsulated semiconductor device is not used as a consumer semiconductor device for inexpensive electronic equipment because the ceramic package itself is large, thick and heavy, has dimensional variations, and is expensive above all. However, resin-encapsulated semiconductor devices are exclusively used.

On the other hand, the resin-sealed semiconductor device is of a type in which a semiconductor element having a relatively low heat generation is conventionally used by resin-sealing, and a semiconductor element having a large heat generation amount, for example, exceeding 1 W. Was not suitable for resin-sealing because of its low heat dissipation.

Recently, a semiconductor device mounted on an electric circuit wiring board in an electronic device has a large amount of heat generation due to an increase in bus width, a large number of elements, and a high speed operation, and a terminal per unit area. Since the density has increased remarkably, not only measures for heat dissipation of electronic devices but also measures for heat dissipation of semiconductor devices themselves have been eagerly awaited.Semiconductor devices lacking this heat dissipation measures are smaller, thinner, and lighter weight electronic devices. It is about to become the biggest factor that hinders increasing speed and speed. Therefore,
The problem to be solved by the present invention is to achieve a small size suitable for high-density mounting even when a semiconductor element with a large heat generation is resin-sealed
To obtain a thin resin-sealed semiconductor device at low cost.

[0007]

Therefore, the resin-encapsulated semiconductor device of the present invention includes a lead frame including a plurality of inner leads and a plurality of outer leads arranged corresponding to the inner leads. In the resin-sealed semiconductor device in which a plurality of electrodes of a semiconductor element are connected to the inner ends of the inner leads, respectively, and the semiconductor element and the inner leads are sealed with a resin, the electrodes of the semiconductor element are The resin existing on the surface opposite to the formed surface is embedded with a heat dissipation device having a heat conductive protrusion over its entire thickness, and the end of the heat conductive protrusion is exposed from the surface of the resin. It was configured to solve the above-mentioned problems.

Further, in the heat dissipation device, at least the surface layer of the clad material in which different kinds of metals having good thermal conductivity are laminated in multiple layers is selectively etched to form the thermal conductive projections.

In addition, the surface of the planar heat dissipation device having the heat-conductive protrusions, on which the heat-conductive protrusions are not formed, is arranged with a plurality of inner leads corresponding to these inner leads. A surface of a lead frame composed of a plurality of outer leads, etc., which is fixed to each inner end portion of the inner lead via an insulating film to form a lead frame with a heat dissipation device and on which the heat conductive protrusion is not formed. Was used as a surface for fixing the semiconductor element, and a lead frame usable in the resin-sealed semiconductor device of the present invention was prepared.

Further, in the resin-sealed semiconductor device, the inner lead of the lead frame is composed of a plurality of inner leads and a plurality of outer leads arranged corresponding to the inner leads. A step of fixing, to each inner end portion, a surface of a heat dissipation device having a heat conductive projection formed on the surface thereof via an insulating film, the surface having no heat conductive projection formed thereon; A step of fixing a semiconductor element having a plurality of electrodes formed on a surface on which the heat conductive protrusion is not formed, and a plurality of electrodes of the semiconductor element and inner end portions of the plurality of inner leads are electrically connected to each other. Connecting to the semiconductor element,
A step of sealing the heat dissipation device, the inner lead and the like with a resin; a step of exposing an end portion of the heat conductive protrusion of the heat dissipation device from a surface of the resin; and a step of exposing the heat conductive protrusion of the heat dissipation device. A step of treating the end portion and the surface of the outer lead so as to be easily connected to an electric circuit wiring board;
It was manufactured by a manufacturing method including a step of molding the outer lead into a predetermined shape.

[0011]

Therefore, the heat generated in the semiconductor element is transferred to the electric circuit wiring board from the inner lead having the poor heat conduction efficiency through the outer leads while being mounted on the electric circuit wiring board using the heat conductive adhesive. In addition to the heat being dissipated through the path of, the heat is dissipated from the heat conductive protrusion to the electric circuit wiring board at the shortest distance via the heat conductive adhesive.

Further, the heat dissipation device having the heat conductive protrusion is
By using a clad material in which different kinds of metals with good thermal conductivity are laminated in multiple layers and using a metal that serves as an etching barrier in the intermediate metal layer, the height of protrusions can be easily made uniform and can be easily manufactured by only one etching. be able to.

Furthermore, the heat dissipation device is manufactured in a separate process, and this heat dissipation device is manufactured in the final manufacturing process of the lead frame.
Since the lead frame with the heat dissipation device can be obtained by bonding the inner end of the inner lead of the lead frame with a conductive adhesive, the existing device group can be used as it is without major process changes or process changes. .

[0014]

Embodiments of the resin-encapsulated semiconductor device (hereinafter simply referred to as "semiconductor device") of the present invention and its manufacturing method will be described below with reference to the drawings. In addition, the same components as those in FIG. 1 is a first embodiment of a semiconductor device according to the present invention, FIG. 1A is a sectional view thereof, and FIG. 1B is a bottom view thereof.

In FIG. 1, reference numeral Sa generally indicates the semiconductor device of the first embodiment of the present invention. The semiconductor device Sa is made of a Fe-Ni alloy or a Cu alloy,
The depressed die pad 5 and a plurality of inner leads 6 arranged along the peripheral edge portion at a predetermined interval width,
A lead frame 3 including a plurality of outer leads 7 arranged corresponding to the inner leads 6
Is used to fix the semiconductor element 1 to the surface of the die pad 5 with a conductive adhesive 4 such as silver paste, and a plurality of electrodes (not shown) formed on the peripheral portion of the surface of the semiconductor element 1 and Each inner end portion of the inner lead 6 is connected with a metal conductor wire 8 such as gold or aluminum. Such a configuration is the same as that of the conventional semiconductor device S shown in FIG.

In the present invention, the heat dissipation device 10 is attached and fixed to the back surface of the die pad 5 with an adhesive (not shown). The heat dissipation device 10 is configured by integrally forming a metal plate 11 having good thermal conductivity and a metal protrusion 12. It is desirable that the surface area of the metal plate 11 be substantially the same as the surface area of the die pad 5. The height of the metal projections 12 is set to the height exposed on the surface of the sealing resin 2, and is arranged in a grid pattern as shown in FIG. 1B. This array does not have to be a grid pattern, and is an array effective for arbitrary heat dissipation. As these main materials, materials having substantially the same thermal expansion properties as the die pad 5 are used.

In this state, when the semiconductor element 1, the die pad 5, the inner lead 6 and the heat dissipation device 10 are sealed with the sealing resin 2 made of epoxy resin, fused silica or the like, the metal protrusions 12 are formed. It is exposed on the surface of the sealing resin 2 on the lower surface of the semiconductor device Sa. Immediately after resin sealing,
Since the metal projection 12 is covered with a thin resin burr (not shown), after the molding, the thin resin burr generated at the root of the outer lead 7 is removed and at the same time, the thin resin burr on the surface of the metal projection 12 is removed. Also try to remove.

After removing the thin resin burrs and before bending the outer leads 7 exposed from the sealing resin 2, the outer leads 7 and the metal projections 12 are surface-plated by electrolytic plating, for example, by soldering. Are plated at the same time.

FIG. 2 is a flow chart showing a method of manufacturing the semiconductor device Sa of the first embodiment of the present invention. A characteristic point of this flowchart is that the heat dissipation device 10 is attached to the lead frame 3 at the end of the lead frame manufacturing process in step 51, and the semiconductor element 1 is attached to the lead frame 3 with such heat dissipation device 10 in step 52. After mounting, in step 54, the heat dissipation device 10 and the semiconductor element 1 are molded together, and after molding, in step 55, the resin burr and the sealing resin 2 present at the root of the outer lead 7 are exposed. The resin burrs attached to the ends of the metal protrusions 12 of the heat dissipation device 10 are removed, and further, in step 56, the surface of the outer lead 7 and the metal protrusions 12 after the resin burrs are removed.
Is to plate solder on the exposed end.

Next, the semiconductor device Sa manufactured by such a manufacturing method is mounted on an electric circuit wiring substrate (hereinafter, simply referred to as "substrate") as shown in FIG. FIG. 3 is a sectional side view when the semiconductor device Sa of the present invention is surface-mounted on a substrate. 20 is a substrate, and the semiconductor device Sa is adhered and fixed to the substrate 20 with a heat conductive adhesive 30.
To be mounted on the surface of. This work is performed in the manufacturing process 58 of FIG.

By surface mounting with such a structure, the heat generated in the semiconductor element 1 can be radiated through the route from the inner lead 6 having a relatively low heat transfer efficiency to the substrate 20 via the outer lead 7. In addition, semiconductor element 1
The heat can be efficiently dissipated by the path continuing to the heat conductive adhesive 30 and the substrate 20 via the die pad 5 bonded and fixed, the metal plate 11 and the metal projection 12 bonded to the back surface thereof.

Next, a manufacturing method and structure of the heat dissipation device 10 will be described with reference to FIGS. 4 and 5. FIG. 4 is a process diagram showing a method of manufacturing a heat dissipation device which is one of the present invention, and FIG. 5 is a perspective view of a heat dissipation device 10 in which a metal plate 11 and a metal protrusion 12 are integrated. In FIG. 4, a laminated metal thin plate 101 having a sandwich structure has a first metal thin plate 102 made of, for example, Cu and having a thickness of about 100 μm, a second metal thin plate 103 made of, for example, Al, having a thickness of about 25 μm, and a thickness. It is one clad material in which a third metal thin plate 104 made of, for example, Cu and having a thickness of about 200 μm is laminated.

Then, a resist 105 is applied to each surface of the first metal thin plate 102 and the third metal thin plate 104, and the resist 105 is developed by a usual photolithography technique, so that the resist 105 can be formed into a desired one. It is processed into a pattern (FIG. 4B).

Thereafter, the third metal thin plate 104, which is one layer of the metal thin plate 101, is exposed to an etching solution that etches Cu and does not etch Al, for example.
Will be etched according to the pattern of the resist 105. If this resist pattern has a polka dot shape, a plurality of cylindrical metal projections 12 as shown in FIG. 5 will be formed (FIG. 4C).

Finally, by cutting into a desired size, for example, by cutting with a die, the heat dissipation device 10 composed of the metal plate 11 with the metal projections 12 integrated is completed (FIG. 4D). Here, the metal plate 11 shown in FIG.
Is composed of the first metal thin plate 102 and the second metal plate 103 in FIG. 4, and the metal projection 12 of FIG. 5 is composed of the third metal thin plate 104 in FIG. Absent.

Next, a second embodiment of the semiconductor device of the present invention will be described with reference to FIGS. 6 and 7. FIG. 6 shows a second embodiment of the semiconductor device of the present invention. FIG. 6A is a sectional side view thereof, and FIG. 6B is a bottom view thereof. And Figure 7
Shows a case where the second embodiment of the semiconductor device of the present invention is surface-mounted on a substrate. FIG. A is a sectional side view immediately before surface mounting and FIG. B is a sectional side view immediately after mounting.

The semiconductor device Sb in this embodiment has, for example, a component ratio of Sn and Pb via a solder plating layer (not shown) formed on the exposed surface of the end of the metal protrusion 12 of the semiconductor device Sa. Are alloy conductor projections 13 made of low melting point solder in a ratio of 6: 4. The alloy conductor projections 13 may be directly soldered by using a so-called jet soldering method, or solder paste may be attached to the back surface of the sealing resin 2 by a solder screen printing method and re-melted. Can also be formed.

The heights of these alloy conductor protrusions 13 are the same. Then, the outermost ends of the alloy conductor protrusions 13 are adjusted to be the same as the height of the lowermost surface of the ends of the outer leads 7 formed in the gull wing shape. Therefore, these alloy conductor protrusions 13 are set in advance so as to project from the plane of the lowermost surface of the end portion of the outer lead 7 and attached, and immediately before the alloy conductor protrusions 13 are hardened.
The above-mentioned adjustment can be performed by pressing the alloy conductor projection 13 against a flat plate (not shown) and stopping the pressing at the bottom surface of the end of the outer leads 7, 7 ,.

As described above, since the height of the alloy conductor protrusion 13 is located at the lowermost surface of the end portion of the outer lead 7, as shown in FIG.
When b is surface-mounted on the metal plate 11, all of the solder paste 21 formed on the substrate 11, the alloy conductor protrusions 13 and the outer leads 7 come into contact with each other, and soldering defects such as unbonded solder are eliminated. You can Since the metal protrusions 12 of the semiconductor device Sb are directly bonded to the substrate 11 by the alloy conductor protrusions 13 having high heat conduction efficiency, the heat dissipation thereof can be further enhanced.

FIG. 8 shows a third embodiment of the semiconductor device of the present invention. FIG. A is a sectional side view of the same, and FIG. B is a bottom view thereof. One of the features of the semiconductor device Sc of this embodiment is that it is configured by using the heat dissipation device 10A having the metal plate 11 having an area sufficiently larger than the surface area of the semiconductor element 1 and capable of covering the inner leads 6. . And
In the peripheral portion of the heat dissipation device 10A, for example, the insulating film 1 made of a polyimide film having a thickness of about 50 μm
The inner end portion of the inner lead 6 was attached via a thermoplastic adhesive (not shown). That is, the heat dissipation device 1
The metal plate 11 of 0A plays a role corresponding to the die pad 5 of the semiconductor devices Sa and Sb. In other words, the lead frame 3A used for the semiconductor device Sc is die padless.

The semiconductor element 1 is connected to the heat dissipation device 10
The surface of the metal plate 11 opposite to the metal projection 12 of A was adhered and fixed with an insulating thermosetting adhesive 4A. In this state, as an example, a power supply system, for example, the Vss inner lead 6
Can be connected to a power supply system, for example, a Vss electrode (not shown) of the semiconductor element 1 by a metal conductor wire 8, and its inner lead 6 can be further connected to a metal plate 11.
It is also possible to supply Vss to the metal protrusion 12 from the substrate.

With this structure, the heat generated in the semiconductor element 1 can be radiated to the substrate 11 almost directly through the inner leads 6 and the metal protrusions 12, and almost the entire area of the metal plate 11 can be radiated. It is possible to radiate heat directly to the substrate 11 via the metal projection 12 formed on the substrate, and the heat radiation efficiency can be further improved.

On the other hand, the metal plate 11, which also functions as a die pad, acts as a Vss power plane, the power system inductance is reduced, and the metal plate 11 and the lead frame 3A can be electrically conducted. You can do it all at once.

Next, a fourth embodiment of the semiconductor device of the present invention will be described. FIG. 9 is a sectional side view showing a fourth embodiment of the semiconductor device of the present invention. This semiconductor device Sd is
The semiconductor element 1 is fixed to a metal plate 11 that has been electroplated (not shown) in advance via an insulating thermosetting adhesive 4A, and the inner lead 6 of the lead frame 3B is attached to the electrode side surface of the semiconductor element 1. It is configured to have a structure in which it is adhered and fixed via an insulating film 14 on top, that is, a so-called lead-on-chip type semiconductor device.

[0035]

As described above, according to the semiconductor device of the present invention, even in the resin-sealed semiconductor device, a semiconductor element which generates a large amount of heat and operates at a high speed can be mounted. In addition, it is possible to obtain a semiconductor device that is compact, suitable for high-density mounting, has a high heat dissipation property, and has a cost as low as that of the conventional resin-encapsulated semiconductor device.

[Brief description of drawings]

FIG. 1 is a first embodiment of a resin-encapsulated semiconductor device of the present invention, FIG. 1A is a sectional side view thereof, and FIG. 1B is a bottom view thereof.

FIG. 2 is a flow chart showing a method of manufacturing the first embodiment of the resin-sealed semiconductor device of the present invention, which is one of the present invention.

FIG. 3 is a sectional side view of the first embodiment of the resin-sealed semiconductor device of the present invention mounted on an electric circuit wiring board.

FIG. 4 is a process drawing showing the method of manufacturing the heat dissipation device which is one of the present invention.

FIG. 5 is a perspective view of a heat dissipation device which is one of the present invention.

FIG. 6 shows a second embodiment of the resin-encapsulated semiconductor device of the present invention, FIG. 6A is a sectional side view thereof, and FIG.

FIG. 7 shows a case where the resin-encapsulated semiconductor device of the second embodiment of the present invention is surface-mounted on an electric circuit wiring board. FIG. 7A is a sectional side view immediately before surface mounting, and FIG. It is a cross-sectional side view of FIG.

FIG. 8 shows a third embodiment of the resin-encapsulated semiconductor device of the present invention, in which FIG. 8A is a sectional side view thereof, and FIG.

FIG. 9 is a sectional side view showing a fourth embodiment of the resin-sealed semiconductor device of the present invention.

FIG. 10 is a cross-sectional side view of a conventional resin-encapsulated semiconductor device.

[Explanation of symbols]

1 Semiconductor Element 2 Sealing Resin 3 Lead Frame 3A Lead Frame 3B Lead Frame 4 Adhesive 4A Insulating Thermosetting Adhesive 5 Die Pad 6 Inner Lead 7 Outer Lead 8 Metal Conductor 10 Heat Dissipator 10A Heat Dissipator 11 Metal Plate 12 Metal Protrusion 13 Alloy Conductor Protrusion 14 Insulating Film 20 Electric Circuit Wiring Board (Substrate) 21 Solder Paste Sa Resin-Encapsulated Semiconductor Device (Semiconductor Device) of First Example Sb Resin-Encapsulated Semiconductor Device (Semiconductor) of Second Example Device Sc Resin-sealed semiconductor device of the third embodiment (semiconductor device) Sd Resin-sealed semiconductor device of the fourth embodiment (semiconductor device)

Claims (12)

[Claims] 1. A lead frame comprising a plurality of inner leads and a plurality of outer leads arranged corresponding to these inner leads, and a plurality of electrodes of a semiconductor element at each inner end of the inner lead. Respectively, in the resin-sealed semiconductor device sealed with a resin containing the semiconductor element and the inner lead, in the resin present on the surface opposite to the surface on which the electrode of the semiconductor element is formed, A heat dissipation device having a heat conductive protrusion is buried over its entire thickness, the end of the heat conductive protrusion is exposed from the surface of the resin, and the outer lead is bent into a predetermined shape. Resin-sealed semiconductor device. 2. A lead frame comprising a die pad, a plurality of inner leads arranged along the peripheral edge portion at a predetermined interval width, and a plurality of outer leads arranged corresponding to these inner leads. , Fixing a semiconductor element to the die pad, connecting a plurality of electrodes of the semiconductor element and each inner end portion of the inner lead, respectively, and sealing with a resin including the semiconductor element, the die pad and the inner lead In a resin-sealed semiconductor device, a resin existing on the other surface of the die pad is embedded with a heat dissipation device having a heat conductive protrusion over its entire thickness,
A resin-encapsulated semiconductor device, wherein an end portion of the heat conductive protrusion is exposed from a surface of the resin, and the outer lead is bent into a predetermined shape. 3. The resin-encapsulated semiconductor device according to claim 1, wherein an alloy coating or an alloy conductor protrusion is formed on a surface of the exposed portion of the heat conductive protrusion of the heat dissipation device. . 4. An outer lead in the resin-sealed semiconductor device according to claim 1 or 2, wherein the outer lead is formed in a shape capable of mounting the resin-sealed semiconductor device on a surface of an electric circuit wiring board. The resin-sealed semiconductor device according to claim 1 or 2. 5. The height of the alloy conductor protrusion formed on the end surface of the heat conductive protrusion is located at the lowermost surface of the end portion of the outer lead according to claim 4.
The resin-encapsulated semiconductor device according to. 6. The resin-sealed semiconductor device according to claim 2, wherein the heat dissipation device is attached to the other surface of the die pad according to claim 2 with a conductive adhesive. 7. The alloy coating formed on the surface of the exposed portion of the heat conductive protrusion of the heat dissipation device according to claim 3 is formed collectively when the alloy coating is formed on the outer leads. The method for manufacturing a resin-encapsulated semiconductor device according to claim 3. 8. A heat dissipation device characterized in that at least a surface layer of a clad material in which different kinds of metals having good thermal conductivity are laminated in multiple layers is selectively etched to form a thermally conductive protrusion. 9. A heat dissipation device comprising a heat conductive protrusion is fixed to a surface of the semiconductor element according to claim 1 opposite to an electrode surface thereof.
The ends of the heat conductive protrusions are exposed from the surface of the resin existing on the surface of the semiconductor element opposite to the electrode surface, and the inner ends of the inner leads are surrounded by the insulating film to the peripheral edge of the heat dissipation device. The resin-sealed semiconductor according to claim 1, wherein the resin-sealed semiconductor is fixed to a portion, the inner lead is partially connected to a peripheral portion of the heat dissipation device, and the outer lead is bent into a predetermined shape. apparatus. 10. A lead frame composed of a plurality of inner leads and a plurality of outer leads arranged corresponding to the inner leads and the like, with an insulating film interposed between the inner ends of the inner leads. And fixing the surface of the planar heat dissipation device having the heat conductive projection formed on the surface thereof, on which the heat conductive projection is not formed, and the heat conductive projection of the heat dissipation device is not formed. Fixing a semiconductor element having a plurality of electrodes formed on its surface, electrically connecting the plurality of electrodes of the semiconductor element and the inner ends of the plurality of inner leads, respectively, the semiconductor element, A step of sealing the heat dissipation device, the inner lead and the like with a resin; a step of exposing an end portion of the heat conductive protrusion of the heat dissipation device from the surface of the resin; The resin-sealed mold according to claim 9, comprising a step of treating the ends of the protrusion and the surface of the outer lead so as to be easily connected to an electric circuit wiring board, and a step of molding the outer lead into a predetermined shape. Manufacturing method of semiconductor device. 11. A lead frame composed of a plurality of inner leads and a plurality of outer leads arranged corresponding to the inner leads and the like, with an insulating film interposed between the inner ends of the inner leads. The surface of the heat dissipating device having the heat-conducting projections formed on its surface is fixed to the surface on which the heat-conducting projections are not formed, and this surface is used as the surface for fixing the semiconductor element. Lead frame with heat dissipation device. 12. An inner lead is fixed to the electrode surface of the semiconductor element according to claim 1 through an insulator film,
A heat dissipation device having a heat conductive protrusion is fixed to the surface of the semiconductor element opposite to the electrode surface, and an end portion of the heat conductive protrusion is a resin present on the surface opposite to the electrode surface of the semiconductor element. The resin-encapsulated semiconductor device according to claim 1, wherein the outer lead is exposed from the surface and the outer lead is bent into a predetermined shape.