JPH09213847A - Semiconductor integrated circuit device, manufacture thereof, and electronic device equipped therewith - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable an air-cooled LSI (large scale semiconductor integrated circuit device) to be lessened in thermal resistance and improved in heat dissipation efficiency. SOLUTION: A first heat dissipating body 6 which is formed of aluminum nitride(AlN), copper tungsten(CuW) or the like and very approximate to Si in thermal expansion coefficient and thermal conductivity is provided with a recess 7 at its center, a semiconductor chip 1 of Si is positioned in the recess 7 so as make its rear side 1a and side face 1C come into close contact with the heat dissipating body 6 through the intermediary of an adhesive layer 8 of silicone resin or solder excellent in thermal conductivity. For instance, a second heat dissipating body 9 of Cu or Al high in thermal conductivity is mounted on the first heat dissipating body 6 through the intermediary of another adhesive layer 8 of silicone resin or solder high in thermal conductivity.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device, a method of manufacturing the same, and an electronic device using the same, and particularly to a semiconductor integrated circuit device for improving heat dissipation efficiency when used for high power. And about effective technology.

[0002]

2. Description of the Related Art Recent LSIs (large-scale semiconductor integrated circuit devices) represented by microprocessors have a higher degree of integration as more functions are required, and the number of pins is increasing. As a result, a large amount of heat is generated in the semiconductor chip, and this heat dissipation measure is becoming important.

The microprocessor is mainly composed of a CMOS including a MOS transistor operating at low power, or a BiCMOS using the CMOS as a main part, but in order to improve the heat radiation efficiency. In addition, the package is a BGA (Ball Grid Array) in which a radiator is attached to the back surface of the semiconductor chip.
A cooling structure made of PGA (Pin Grid Array) is adopted.

Such a microprocessor is incorporated in an electronic device including various computer systems such as a personal computer (PC), a workstation (WS) and a mainframe (MF), and generates a large amount of heat during operation. . In order to realize a high-performance microprocessor,
Measures to dissipate those heat are essential.

A water-cooling method is generally considered as a measure for this heat dissipation. However, recent computer systems are more miniaturized so that they can be stored in a limited space, and there is an increasing demand for the water-cooling method. There is a problem in labor saving because the structure including the auxiliary equipment for is relatively large. For this reason, the air-cooling method having a relatively simple structure is advantageous.

Taking a microprocessor as an example, recently, a high-power one satisfying a power consumption of about 50 to 60 W is demanded, but an air-cooling system is used to operate the microprocessor of this level with high performance. In order to realize it, the thermal resistance T needs to be T ≦ 1 ° C./W.

From this point of view, the LS by the air cooling system is used.
CCB (Controlled Colla)
By using the pse Bonding technology,
The surface side of a semiconductor chip having a plurality of solder bump electrodes on its surface is face-down bonded to a base substrate made of, for example, ceramics via the solder bump electrodes, and its back surface side is bonded via an adhesive solder, for example. It is known that a package having a structure in which a sealing cap made of AlN (aluminum nitride) or the like is adhered to the back surface is used.

For example, published by Nikkei BP, published on May 31, 1993, "VLSI packaging technology (lower)",
P178 is an L that has a package of such a structure.
SI is shown.

A package having such a structure is an MCC.
(Micro Carrier for LSI Ch
ip or Micro Chip Carrier
The heat generated in the semiconductor chip is transferred from the back surface of the semiconductor chip to the sealing cap through the bonding solder having excellent thermal conductivity, and the sealing having excellent thermal conductivity is also performed. The cap is designed to radiate heat to the outside.

[0010]

In the air-cooling type LSI having the MCC structure as described above, it is impossible to satisfy the condition of the thermal resistance T as described above, as is apparent from the description of the above document. And at most T ≦ 1 to several degrees C. /
W is the limit. Therefore, it is impossible to improve the heat dissipation efficiency.

As an example of an LSI having a power consumption of 50 W, if T = 1 ° C./W, the temperature rise of the package becomes 50 ° C. or more, and a heat sink such as a sealing cap to outside air. If it is included, the temperature rises by about 100 ° C., and the cooling by the air cooling system will not function.

An object of the present invention is to provide a technique capable of reducing the heat resistance and improving the heat radiation efficiency even in an air cooling type LSI.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0014]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, typical ones are briefly described as follows.

(1) In the semiconductor integrated circuit device of the present invention, a semiconductor chip is face-down bonded to a base substrate through a ball-shaped electrode, and a heat radiator is attached to the back surface of the semiconductor chip, and the ball-shaped solder is attached to the bottom surface of the base substrate. A semiconductor integrated circuit device in which a mounting electrode that is electrically connected to an electrode is arranged, the first heat radiator covering a back surface and a side surface of the semiconductor chip, and a second heat radiator attached to the first heat radiator. have.

(2) In the method of manufacturing a semiconductor integrated circuit device of the present invention, a semiconductor chip having a ball-shaped electrode on the surface is
A step of face-down bonding so that the ball-shaped electrode is electrically connected to the mounting electrode on the surface of a base substrate having a mounting electrode arranged on the bottom surface;
Positioning the semiconductor chip in the recess of the heat radiator, and attaching the first heat radiator so as to cover the back surface and the side surface of the semiconductor chip via an adhesive layer having excellent thermal conductivity,
And a step of attaching the second heat radiator to the first heat radiator via an adhesive layer having excellent thermal conductivity.

(3) In the electronic device of the present invention, the semiconductor chip is face-down bonded to the base substrate having the mounting electrode on the bottom surface through the ball-shaped electrode so as to cover the back surface and the side surface of the semiconductor chip. A semiconductor integrated circuit device, in which a first radiator is attached and a second radiator is attached to the first radiator, is mounted on a wiring board via the mounting electrodes, and a plurality of wiring boards are provided. It has been incorporated.

According to the above-mentioned means (1), the semiconductor integrated circuit device of the present invention is the first heat radiator for covering the back surface and the side surface of the semiconductor chip face-down bonded to the base substrate via the ball-shaped electrodes. And the second heat radiator attached to the first heat radiator, the heat resistance can be reduced and the heat radiation efficiency can be improved even in the air-cooled LSI.

According to the above-mentioned means (2), in the method for manufacturing a semiconductor integrated circuit device of the present invention, first, a semiconductor chip having a ball-shaped electrode on the surface thereof and a base substrate having a mounting electrode on the bottom surface thereof are arranged. Face down bonding is performed on the surface of the so that the ball-shaped electrode is electrically connected to the mounting electrode. Next, the semiconductor chip is positioned in the recess of the first heat radiator provided with the recess, and the first heat radiator is covered so as to cover the back surface and the side surface of the semiconductor chip via the adhesive layer having excellent thermal conductivity. Attach. Subsequently, the second heat radiator is attached to the first heat radiator via an adhesive layer having excellent thermal conductivity. As a result, it is possible to reduce the thermal resistance and improve the heat dissipation efficiency even in an LSI using the air cooling method.

According to the above-mentioned means (3), in the electronic device of the present invention, the semiconductor chip is face-down bonded to the base substrate having the mounting electrode on the bottom surface through the ball electrode, and the semiconductor chip is mounted. A semiconductor integrated circuit device in which a first heat radiator is attached so as to cover the back surface and side surface of the substrate and a second heat radiator is attached to the first heat radiator is provided on a wiring board via the mounting electrodes. Since it is mounted and multiple wiring boards are incorporated,
It is possible to reduce the heat resistance and improve the heat dissipation efficiency even in the LSI using the air cooling method.

Hereinafter, the present invention will be described in detail along with embodiments with reference to the drawings.

In all the drawings for describing the embodiments, those having the same functions are denoted by the same reference numerals, and their repeated description will be omitted.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION

(Embodiment 1) FIG. 1 is a plan view showing a semiconductor integrated circuit device according to Embodiment 1 of the present invention, and FIG. 2 is a sectional view taken along line AA of FIG. Semiconductor integrated circuit device 10 according to the first embodiment
, A semiconductor chip (L
A plurality of ball-shaped electrodes 2 made of, for example, solder bumps are provided on the surface 1A of the SI chip 1 and the semiconductor chip 1 is made of, for example, BT resin or ceramic (Al ₂
Face-down bonding is performed by connecting the ball-shaped electrode 2 to the conductive layer 4 on the surface of the base substrate 3 made of, for example, O ₃ or the like) by soldering.

As the semiconductor chip 1, a microprocessor chip composed of, for example, CMOS or BiCMOS using this CMOS as a main part is used.

A plurality of mounting electrodes 5 made of, for example, solder bumps are arranged on the bottom surface of the base substrate 3, and each mounting electrode 5 is provided with a corresponding conductive layer 4 through through-hole wiring.
It is electrically connected to each ball-shaped electrode 2 via. As a result, the BGA is configured and high density mounting is possible.

For example, aluminum nitride (Al
N), copper tungsten (CuW) and the like, a first heat radiator 6 having a coefficient of thermal expansion similar to that of Si and a coefficient of thermal conductivity similar to that of Si is used. When the recess 7 is provided and the semiconductor chip 1 is positioned in the recess 7, the back surface 1B of the semiconductor chip 1 is bonded to the semiconductor chip 1 via an adhesive layer 8 made of, for example, silicone resin, solder or the like and having excellent thermal conductivity.
And the side surface 1C is covered with the first radiator 6.
The first radiator 6 functions as a so-called heat spreader, and the depth dimension of the recess 7 is the thickness dimension of the semiconductor chip 1 (about 0.3 to
It is set to a value slightly smaller than 0.5 mm).

A second radiator 9 having a high thermal conductivity made of, for example, a Cu-based or Al-based metal is used, and the second radiator 9 is made of, for example, a silicone resin or solder and has excellent thermal conductivity. It is attached to the first radiator 6 via the adhesive layer 8. It is desirable that the second radiator 9 has a fin shape with a large surface area so that heat can be efficiently dissipated.

In addition, each ball-shaped electrode 2 and mounting electrode 5
The number of is shown as a limited number to facilitate understanding of the description. For the same reason, the size relationship between the semiconductor chip 1, the base substrate 3, the first radiator 6, the second radiator 9, and the like does not reflect the actual situation.

According to the LSI having such a structure, both the back surface 1B and the side surface 1C of the semiconductor chip 1 are provided with the first heat radiating body via the adhesive layer 8 made of, for example, silicone resin, solder or the like and having excellent thermal conductivity. The second heat radiator 9 is covered with the second heat radiator 6, and the second heat radiator 9 is attached to the first heat radiator 6 via the adhesive layer 8 made of, for example, silicone resin, solder or the like and having excellent thermal conductivity. The heat generated at 1 is generated not only from the back surface 1A but also from the side surface 1C thereof.
The heat is transmitted to the heat radiating body 6 and spread to the surroundings, and this heat is further radiated to the outside air from the second heat radiating body 9, so that efficient heat radiating is possible.

Therefore, the thermal resistance T can be remarkably reduced, and the thermal resistance of about 0.2 to 0.7 ° C./W can be realized. This makes it possible to improve heat dissipation efficiency and realize a high-performance microprocessor, so that even when the microprocessor is incorporated in an electronic device including various computer systems, sufficient heat dissipation measures can be taken. become.

Next, the method of manufacturing the semiconductor integrated circuit device 10 according to the first embodiment will be described in the order of steps with reference to FIGS.

First, as shown in FIG. 3, a semiconductor chip (LSI chip) 1 made of, for example, a Si single crystal having a plurality of ball-shaped electrodes 2 made of, for example, solder bumps provided on the surface 1A is prepared.

Next, as shown in FIG. 4, a conductive layer 4 is formed on the surface.
Is provided, and a base substrate 3 made of, for example, resin or ceramic, having a plurality of mounting electrodes 5 made of, for example, solder bumps arranged on the bottom surface is prepared, and the semiconductor chip 1 is provided with the ball-shaped electrodes 2 on its conductive layer 4. Connect by soldering and face down bonding. In this bonding process, the semiconductor chip 1 is mounted on the base substrate 3.
It can be easily carried out by passing the reflow furnace in the state of being positioned.

Then, as shown in FIG. 5, for example, aluminum nitride (AlN) and copper tungsten (Cu) are used.
A semiconductor chip 1 is positioned in the recess 7 by preparing a first heat radiator 6 made of W) or the like having a coefficient of thermal expansion similar to that of Si and having a coefficient of thermal conductivity similar to that of the first embodiment. As a result, the back surface 1B and the side surface 1C thereof are covered with the first heat radiator 6 via the adhesive layer 8 made of, for example, silicone resin, solder or the like and having excellent thermal conductivity.

Next, as shown in FIG. 6, a second heat radiating body 9 made of, for example, a Cu-based or Al-based metal and having a high thermal conductivity is prepared, and the second heat radiating body 9 is made of, for example, a silicone resin. Adhesive layer 8 made of solder, solder, etc. with excellent thermal conductivity
It is attached to the first radiator 6 via.

As described above, the semiconductor integrated circuit device 10 as shown in FIG. 1 is obtained.

According to the first embodiment described above, the following effects can be obtained.

A first radiator 6 for covering the back surface 1B and the side surface 1C of the semiconductor chip 1 which is face-down bonded to the base substrate 3 via a plurality of ball-shaped electrodes 2 formed of, for example, solder bumps, and this first heat radiation. Since the second heat radiator 9 attached to the body 6 is provided, the heat resistance can be reduced and the heat radiation efficiency can be improved even in the LSI by the air cooling method.

(Second Embodiment) FIG. 7 shows a second embodiment of the present invention.
3 is a cross-sectional view showing the semiconductor integrated circuit device according to FIG. The semiconductor integrated circuit device 10 according to the second embodiment includes the base substrate 3
This is an example applied to a so-called Butt-PGA in which a short pin is used as the mounting electrode 5 provided on the bottom surface of the. Even in such a Butt-PGA structure, high-density mounting is possible like BGA.

According to the second embodiment described above, only the package structure is different from that of the first embodiment, and therefore the same effect as that of the first embodiment can be obtained.

(Embodiment 3) FIG. 8 shows Embodiment 2 of the present invention.
3 is a cross-sectional view showing the semiconductor integrated circuit device according to FIG. In the semiconductor integrated circuit device 10 according to the third embodiment, as compared with the first embodiment, the first radiator 6 is provided with the convex portion 11 so as to surround the concave portion 7. As shown in FIG. The height dimension of the convex portion 11 is set to a value slightly larger than the thickness dimension of the semiconductor chip 1 including the ball-shaped electrode 2.

The first radiator 6 has a convex portion 11 supported on the surface of the base substrate 3 via an insulating adhesive layer 12 such as a resin so that the back surface 1B and the side surface 1 of the semiconductor chip 1 are covered.
It covers C.

According to the third embodiment as described above, in addition to the same effect as that of the first embodiment, the semiconductor chip 1 is sealed from the outside air in the base substrate 3 by the convex portion 11 of the first heat radiator 6. Since it is mounted in such a structure, it is possible to prevent invasion of harmful substances such as impurities and contaminants from the outside air, and it is possible to obtain a highly reliable LSI. In addition, the first radiator 6 is the convex portion 1
Since 1 prevents the weight of the first and second heat radiators 6 and 9 from being applied to the semiconductor chip 1, the effect of preventing damage to the semiconductor chip 1 can be obtained.

(Embodiment 4) FIG. 10 is a sectional view showing an electronic device according to Embodiment 4 of the present invention. A plurality of semiconductor integrated circuit devices 10 obtained in Embodiment 1 are used and mounted on a common wiring board 13. This shows an example in which the module board 17 is assembled.

Each of the semiconductor integrated circuit devices 10 is positioned on the wiring substrate 13 having the conductive layer 14 provided on the surface thereof in advance, and is passed through the reflow furnace, whereby the mounting electrodes 5 are formed.
Are soldered and mounted on the conductive layer 14.

When each semiconductor integrated circuit device 10 is mounted on the wiring board 13 in this manner, the components of the solder bumps of the ball-shaped electrodes 2 and the components of the solder bumps of the mounting electrodes 5 are changed so as to be different from each other. Since the melting points are different, it is possible to avoid melting of the ball-shaped electrode 2 soldered in the previous step when the mounting electrode 5 is soldered in the subsequent step. In the case of the structure of the present embodiment, in order to prevent the weight of the first and second radiators 6 and 9 from being applied to the semiconductor chip 1, the first radiator 6 and the wiring board 13 are separated from each other. It is desirable to interpose the spacer 16 therebetween.

According to the fourth embodiment as described above, the module substrate 17 is assembled using the semiconductor integrated circuit device 10 obtained in the first embodiment. Therefore, in the same manner as in the first embodiment, in the LSI by the air cooling method. It is also possible to reduce the thermal resistance and improve the heat dissipation efficiency.

(Fifth Embodiment) FIG. 11 is a sectional view showing an electronic device according to a fifth embodiment of the present invention. A plurality of semiconductor integrated circuit devices 10 obtained according to the third embodiment are mounted on a common wiring board 13. This shows an example in which the module board 17 is assembled.

According to the structure of this embodiment, since the semiconductor chip 1 is not weighted by the convex portion 11 of the first heat radiator 6, the spacer is not necessary.

According to the fifth embodiment as described above, since the module substrate 17 is assembled using the semiconductor integrated circuit device 10 obtained in the third embodiment, as in the third embodiment, in the air-cooled LSI. It is also possible to reduce the thermal resistance and improve the heat dissipation efficiency.

(Embodiment 6) FIG. 12 is a sectional view showing an electronic device according to Embodiment 6 of the present invention, in which a plurality of module boards 17 obtained in Embodiment 4 are used and a connector 19 is provided.
1 shows an example in which an electronic device 20 such as various computers is assembled by being mounted on the main board 18 via.

According to the sixth embodiment as described above, the electronic device 2 using the module substrate 17 obtained in the fourth embodiment.
Since 0 is assembled, it is possible to reduce heat resistance and improve heat dissipation efficiency in an air-cooled LSI as in the fourth embodiment.

(Embodiment 7) FIG. 13 is a sectional view showing an electronic device according to Embodiment 7 of the present invention, in which a plurality of module boards 17 obtained according to Embodiment 5 are used and a connector 19 is used.
1 shows an example in which an electronic device 20 such as various computers is assembled by being mounted on the main board 18 via.

According to the seventh embodiment as described above, the electronic device 2 using the module substrate 17 obtained in the fifth embodiment is used.
Since 0 is assembled, it is possible to reduce heat resistance and improve heat dissipation efficiency in an air-cooled LSI as in the fifth embodiment.

As described above, the invention made by the present inventor is
Although specifically described based on the embodiment, the present invention
It is needless to say that the present invention is not limited to the above embodiment, and various changes can be made without departing from the scope of the invention.

For example, in the above-described embodiment, an example in which it is applied to an LSI having a package of BGA or Butt-PGA structure has been described, but the present invention is not limited to this and, for example, TA
B (Tape Automated Bonding)
It is also possible to apply the structure package.

Further, in the above-described embodiment, the semiconductor chip has been described by way of example as a chip for a microprocessor constituted by, for example, CMOS or BiCMOS using this CMOS as a main part, but the present invention is not limited to this. EC
The present invention is also applicable to L-CMOS, ECL type microprocessors, MPUs, MCUs and peripheral ASIC-LSIs.

Further, in the above-described embodiment, an example in which the packaging electrode is applied to an LSI having a package of BGA or Butt-PGA structure has been described. However, in such a structure in which the mounting electrodes have a ball shape or a short pin shape, In particular, when handling a high frequency signal, the inductance component can be reduced, which is effective in increasing the speed.

It should be noted that the specific materials such as the ball-shaped electrodes, the first and second heat radiators, and the adhesive layer having excellent thermal conductivity shown in the above embodiment are merely examples, and similar materials are used. If it has a function, it can be used similarly.

In the above description, the case where the invention made by the present inventor is mainly applied to the semiconductor integrated circuit device which is the background field of application has been described, but the invention is not limited thereto. INDUSTRIAL APPLICABILITY The present invention can be applied to at least the condition that heat dissipation efficiency is improved when used for high power.

[0061]

The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

There is provided a first heat radiator that covers the back and side surfaces of the semiconductor chip that is face-down bonded to the base substrate through the ball-shaped electrodes, and a second heat radiator that is attached to the first heat radiator. Therefore, it is possible to reduce the heat resistance and improve the heat radiation efficiency even in the LSI using the air cooling method.

[Brief description of drawings]

FIG. 1 is a plan view showing a semiconductor integrated circuit device according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a cross-sectional view showing a step of the method for manufacturing the semiconductor integrated circuit device according to the first embodiment of the present invention.

FIG. 4 is a sectional view showing another step of the method for manufacturing the semiconductor integrated circuit device according to the first embodiment of the present invention.

FIG. 5 is a sectional view showing another step of the method for manufacturing the semiconductor integrated circuit device according to the first embodiment of the present invention.

FIG. 6 is a sectional view showing another step of the method for manufacturing the semiconductor integrated circuit device according to the first embodiment of the present invention.

FIG. 7 is a sectional view showing a semiconductor integrated circuit device according to Embodiment 2 of the present invention.

FIG. 8 is a sectional view showing a semiconductor integrated circuit device according to a third embodiment of the present invention.

FIG. 9 is a bottom view showing a main part of a semiconductor integrated circuit device according to a third embodiment of the present invention.

FIG. 10 is a sectional view showing an electronic device according to Embodiment 4 of the present invention.

FIG. 11 is a sectional view showing an electronic device according to a fifth embodiment of the present invention.

FIG. 12 is a sectional view showing an electronic device according to Embodiment 6 of the present invention.

FIG. 13 is a sectional view showing an electronic device according to Embodiment 7 of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 1A ... Front surface of semiconductor chip, 1B Back surface of semiconductor chip, 1C ... Side surface of semiconductor chip, 2 ... Ball-shaped electrode, 3 ... Base substrate, 4 ... Conductive layer, 5 ... Mounting electrode, 6 ... 1 heat radiator (heat spreader), 7 ...
Recessed portion, 8 ... Adhesive layer having excellent thermal conductivity, 9 ... Second heat radiator, 10 ... Semiconductor integrated circuit device, 11 ... Convex portion, 12 ... Insulating adhesive layer, 13 ... Wiring board, 14 ... Conductive layer, 15 ... Wiring board, 16 ... Spacer, 17 ... Module board, 18
... main board, 19 ... connector, 20 ... electronic device.

Claims (9)

[Claims] 1. A semiconductor chip is face-down bonded to a base substrate via a ball-shaped electrode, and
A semiconductor integrated circuit device in which a heat radiator is attached to a back surface of the base substrate, and mounting electrodes electrically connected to the ball-shaped electrodes are arranged on a bottom surface of the base substrate, the first heat radiator covering a back surface and a side surface of the semiconductor chip. And a second heat radiator attached to the first heat radiator. 2. The semiconductor integrated circuit device according to claim 1, wherein the first heat radiator covers the back surface and the side surface of the semiconductor chip via an adhesive layer having excellent thermal conductivity. . 3. The semiconductor integrated circuit device according to claim 1, wherein the ball-shaped electrodes are solder bumps. 4. The semiconductor integrated circuit device according to claim 1, wherein the mounting electrodes are solder bumps. 5. The semiconductor integrated circuit device according to claim 1, wherein the first heat radiator is provided with a concave portion that covers a back surface and a side surface of the semiconductor chip. 6. The first heat radiator is provided with a convex portion surrounding the concave portion, and the convex portion is supported on the front surface of the base substrate so that the rear surface and the side surface of the semiconductor chip are covered. The semiconductor integrated circuit device according to claim 5, which is covered. 7. A step of face-down bonding a semiconductor chip having a ball-shaped electrode on a surface thereof to a surface of a base substrate having a mounting electrode on a bottom surface thereof so that the ball-shaped electrode is electrically connected to the mounting electrode. , Positioning the semiconductor chip in the recess of the first heat radiator provided with the recess, and attaching the first heat radiator so as to cover the back surface and the side surface of the semiconductor chip via an adhesive layer having excellent thermal conductivity. A method of manufacturing a semiconductor integrated circuit device, comprising: a step of attaching a second heat radiator to the first heat radiator via an adhesive layer having excellent thermal conductivity. 8. A semiconductor chip is face-down bonded to a base substrate having a mounting electrode on the bottom surface via a ball-shaped electrode, and a first heat radiator is attached so as to cover the back surface and the side surface of the semiconductor chip. With
An electronic device characterized in that a semiconductor integrated circuit device in which a second heat radiator is attached to the first heat radiator is mounted on a wiring board via the mounting electrodes, and a plurality of wiring boards are incorporated. apparatus. 9. The semiconductor integrated circuit device includes a first heat radiator provided with a concave portion covering a back surface and a side surface of the semiconductor chip, and a convex portion surrounding the concave portion, 9. The electronic device according to claim 8, wherein the convex portion covers the back surface and the side surface of the semiconductor chip so as to be supported by the front surface of the base substrate.