JPS63289847A - Heat dissipation structure of lsi package - Google Patents
Heat dissipation structure of lsi packageInfo
- Publication number
- JPS63289847A JPS63289847A JP12476087A JP12476087A JPS63289847A JP S63289847 A JPS63289847 A JP S63289847A JP 12476087 A JP12476087 A JP 12476087A JP 12476087 A JP12476087 A JP 12476087A JP S63289847 A JPS63289847 A JP S63289847A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor integrated
- integrated circuit
- circuit chip
- heat dissipation
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 abstract description 12
- 239000007788 liquid Substances 0.000 abstract description 5
- 239000000110 cooling liquid Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- OMBVEVHRIQULKW-DNQXCXABSA-M (3r,5r)-7-[3-(4-fluorophenyl)-8-oxo-7-phenyl-1-propan-2-yl-5,6-dihydro-4h-pyrrolo[2,3-c]azepin-2-yl]-3,5-dihydroxyheptanoate Chemical compound O=C1C=2N(C(C)C)C(CC[C@@H](O)C[C@@H](O)CC([O-])=O)=C(C=3C=CC(F)=CC=3)C=2CCCN1C1=CC=CC=C1 OMBVEVHRIQULKW-DNQXCXABSA-M 0.000 abstract description 2
- 229940126540 compound 41 Drugs 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体集積回路の放熱構造に関し、特に高電力
の半導体集積回路に適した半導体集積回路の放熱構造に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a heat dissipation structure for a semiconductor integrated circuit, and particularly to a heat dissipation structure for a semiconductor integrated circuit suitable for a high-power semiconductor integrated circuit.
［従来の技術］
従来、この種の半導体集積回路の放熱構造は、半導体集
積回路チップが直接冷却される構造（例えば、ｆＬｓ
Ｉの高密度実装を可能にする１８Ｍ３０８１の熱伝導モ
ジニル１日経エレクトロニクス１９８２．７．１９ Ｐ
２３３〜Ｐ２５２）や、あるいは半導体集積回路チップ
をケースに実装し、冷却液を流して冷却する液浸冷却構
造（例えば、ｒ主記憶２Ｇバイトで液浸冷却方式のＣＲ
ＡＹ−２ス一パーコンピユータ１日経エレクトロニクス
１９８５．１２．１Ｓ Ｐ１９５〜Ｐ２Ｏ９）が用いら
れていた。[Prior Art] Conventionally, the heat dissipation structure of this type of semiconductor integrated circuit has a structure in which the semiconductor integrated circuit chip is directly cooled (for example, fLs
18M3081 thermal conductive module that enables high-density packaging of I Nikkei Electronics 1982.7.19 P
233 to P252), or a liquid immersion cooling structure in which a semiconductor integrated circuit chip is mounted in a case and cooled by flowing a cooling liquid (for example, a liquid immersion cooling type CR with a main memory of 2 GB).
AY-2 Super Computer 1 Nikkei Electronics 1985.12.1S P195-P2O9) was used.
こねに対し、最近の半導体素子の高性能化、高集積化に
伴って、半導体集積回路チップの電力も数ワットから数
十ワットに到るものも出現してきているのが現状である
。On the other hand, as semiconductor devices have recently become more sophisticated and highly integrated, the current situation is that semiconductor integrated circuit chips whose power output ranges from several watts to several tens of watts are now appearing.
［解決すべき問題点］
上記従来の半導体集積回路の放熱構造にあっては通常の
半導体集積回路においては十分に機能を発揮し得るもの
の、最近の半導体素子の高性能化、高集積化に伴う高電
力の半導体集積回路チップでは十分な熱放散がなし難い
場合があるという欠点があった。[Problems to be Solved] Although the conventional heat dissipation structure of semiconductor integrated circuits described above can function satisfactorily in normal semiconductor integrated circuits, it is There is a drawback in that it may be difficult to sufficiently dissipate heat in high-power semiconductor integrated circuit chips.
［問題点の解決手段］
本発明は、上記従来の問題点を解決するためになしたも
ので、その解決手段として本発明の半導体集積回路の放
熱構造は、半導体集積回路チップまたは半導体集積回路
チップを搭載したＬＳＩパッケージの放熱部に、前記半
導体集積回路チップまたはＬＳＩパッケージの放熱面よ
りも大きな寸法で、熱伝導率の高い材料からなる熱伝導
プレートを接着した構成としている。[Means for Solving Problems] The present invention has been made in order to solve the above-mentioned conventional problems. A thermally conductive plate made of a material with high thermal conductivity and larger in size than the heat radiation surface of the semiconductor integrated circuit chip or LSI package is bonded to the heat radiation part of the LSI package in which the LSI package is mounted.
［実施例］
次に、本発明の実施例について図面を参照して説明する
。[Example] Next, an example of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例に係る半導体集積回路の放熱
構造を示す部分断面図である。FIG. 1 is a partial sectional view showing a heat dissipation structure of a semiconductor integrated circuit according to an embodiment of the present invention.
図中１は基板で、入力端子１１よび内部配線１２を有し
、この基板１には半導体集積回路チップ２がフェースダ
ウンで実装されている。半導体集積回路チップ２の放熱
部である裏面には、その寸法よりひと回り大きな熱伝導
プレート３が半田付けされている。この熱伝導プレート
３は少なくとも半導体集積回路チップ２よりも熱伝導率
が高い材料で形成しである。更にその熱伝導プレート３
上には、微小な間隙を有し、該間隙には、柔軟性のある
熱伝導コンパウンド４１が充填され、その上に冷却プレ
ート４が取付けられている。冷却プレート４には、冷却
液を流せる構造を有する液冷プレート５が接合されてい
る。In the figure, reference numeral 1 denotes a board, which has input terminals 11 and internal wiring 12, and a semiconductor integrated circuit chip 2 is mounted face down on this board 1. A thermally conductive plate 3 that is slightly larger in size than the back surface of the semiconductor integrated circuit chip 2, which is a heat dissipating portion, is soldered to the back surface. The heat conductive plate 3 is made of a material having a higher thermal conductivity than at least the semiconductor integrated circuit chip 2. Furthermore, the heat conduction plate 3
There is a small gap at the top, the gap is filled with a flexible thermally conductive compound 41, and the cooling plate 4 is attached thereon. A liquid cooling plate 5 having a structure through which a cooling liquid can flow is joined to the cooling plate 4.
この様な構造にすることによって、半導体集積回路チッ
プ２で発生した熱は、熱伝導プレート３によって放熱面
積が拡げられ効率良く冷却プレート４に伝導され、液冷
プレート５で除去される。With this structure, the heat generated in the semiconductor integrated circuit chip 2 is efficiently conducted to the cooling plate 4 because the heat dissipation area is expanded by the heat conduction plate 3, and is removed by the liquid cooling plate 5.
従って、高電力の半導体集積回路チップ２で発生した多
量の熱でも放散が可能となる。Therefore, even a large amount of heat generated by the high-power semiconductor integrated circuit chip 2 can be dissipated.
第２図は、本発明の他の実施例を示す断面図である。入
出力電極１３および接続導体１４を有する基板２１に、
半導体集積回路チップ２２がフェースダウンで搭載され
、キャップ１５で封止されたパッケージとなっている。FIG. 2 is a sectional view showing another embodiment of the invention. On the substrate 21 having the input/output electrodes 13 and the connecting conductors 14,
The package includes a semiconductor integrated circuit chip 22 mounted face down and sealed with a cap 15.
半導体集積回路チップ２２の裏面はキャップ１５に接合
されている。更にパッケージのキャップ１５には、その
寸法より大きな寸法の熱伝導プレート２３が半田付けさ
れている。この熱伝導プレート２３は少なくともキャッ
プ１５よりも高い熱伝導率を有する材料で形成しである
。The back surface of the semiconductor integrated circuit chip 22 is joined to the cap 15. Furthermore, a thermally conductive plate 23 having a larger size than the cap 15 of the package is soldered to the cap 15 of the package. The thermally conductive plate 23 is made of a material having a higher thermal conductivity than the cap 15 at least.
従って、半導体集積回路チップ２２で発生した熱は、キ
ャップ１５を介して熱伝導プレート２３に伝わり熱伝導
プレート２３で熱伝導面積が拡げられ、例えば、液浸冷
却または第１図に示す冷却構造の半導体集積回路チップ
２および熱伝導プレート３に相当する部分に置き換えた
冷却方法に於いては、熱放散効率が改善され、大電力の
半導体集積回路チップの放熱が可能となる。Therefore, the heat generated in the semiconductor integrated circuit chip 22 is transmitted to the heat conduction plate 23 via the cap 15, and the heat conduction area is expanded by the heat conduction plate 23. In the cooling method in which the parts corresponding to the semiconductor integrated circuit chip 2 and the heat conductive plate 3 are replaced, the heat dissipation efficiency is improved and it becomes possible to dissipate heat from the high power semiconductor integrated circuit chip.
［発明の効果］
以上説明したように本発明のＬＳＩパッケージの放熱構
造は、半導体集積回路チップの放熱部に、その半導体集
積回路チップより大きな寸法法で、しかも熱伝導率の高
い材料からなる熱伝導プレートを接着し、または、半導
体集積回路チップを搭載したＬＳＩパッケージに於いて
は、そのＬＳＩパッケージの放熱部の面積よりも大きな
熱伝導率の高い材料の熱伝導プレートを接着することと
したため、半導体集積回路又はＬＳＩパッケージの熱流
路面積を拡大し、放熱効率を高め、大電力の半導体集積
回路チップでも確実かつ有効に冷却できるという効果が
ある。[Effects of the Invention] As explained above, the heat dissipation structure of the LSI package of the present invention has a heat dissipation structure in the heat dissipation part of the semiconductor integrated circuit chip that is larger in size than the semiconductor integrated circuit chip and is made of a material with high thermal conductivity. By adhering a conductive plate, or in the case of an LSI package equipped with a semiconductor integrated circuit chip, by adhering a thermally conductive plate made of a material with high thermal conductivity that is larger than the area of the heat dissipation section of the LSI package. This has the effect of expanding the heat flow area of a semiconductor integrated circuit or LSI package, increasing heat dissipation efficiency, and reliably and effectively cooling even high-power semiconductor integrated circuit chips.
第１図は本発明の一実施例に係る半導体集積回路の放熱
構造を示す部分断面図、第２図は本発明の他の実施例を
示す断面図である。
１．２１：基板
２，２２：半導体集積回路チップ
３．２３：熱伝導プレート
４：冷却プレート
１５：キャップFIG. 1 is a partial sectional view showing a heat dissipation structure of a semiconductor integrated circuit according to an embodiment of the present invention, and FIG. 2 is a sectional view showing another embodiment of the invention. 1.21: Substrate 2, 22: Semiconductor integrated circuit chip 3.23: Heat conduction plate 4: Cooling plate 15: Cap
Claims (1)
載したＬＳＩパッケージの放熱部に、前記半導体集積回
路チップまたはＬＳＩパッケージの放熱面よりも大きな
寸法で、熱伝導率の高い材料からなる熱伝導プレートを
接着したことを特徴とするＬＳＩパッケージの放熱構造
。A thermally conductive plate made of a material with high thermal conductivity and having dimensions larger than the heat dissipating surface of the semiconductor integrated circuit chip or LSI package is adhered to the heat dissipating part of the semiconductor integrated circuit chip or the LSI package on which the semiconductor integrated circuit chip is mounted. A heat dissipation structure for an LSI package characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12476087A JPS63289847A (en) | 1987-05-21 | 1987-05-21 | Heat dissipation structure of lsi package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12476087A JPS63289847A (en) | 1987-05-21 | 1987-05-21 | Heat dissipation structure of lsi package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63289847A true JPS63289847A (en) | 1988-11-28 |
Family
ID=14893436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12476087A Pending JPS63289847A (en) | 1987-05-21 | 1987-05-21 | Heat dissipation structure of lsi package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63289847A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5285108A (en) * | 1991-06-21 | 1994-02-08 | Compaq Computer Corporation | Cooling system for integrated circuits |
| US5325265A (en) * | 1988-11-10 | 1994-06-28 | Mcnc | High performance integrated circuit chip package |
| WO1999016128A1 (en) * | 1997-09-19 | 1999-04-01 | Hitachi, Ltd. | Semiconductor module |
| WO2002099880A1 (en) * | 2001-05-30 | 2002-12-12 | Hitachi, Ltd. | Semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6018942A (en) * | 1983-07-13 | 1985-01-31 | Mitsubishi Electric Corp | Heat radiating member for electronic part |
| JPS6217140B2 (en) * | 1983-08-20 | 1987-04-16 | Matsushita Electric Ind Co Ltd | |
| JPS6316492B2 (en) * | 1980-10-21 | 1988-04-08 | Kanebo Ltd |
-
1987
- 1987-05-21 JP JP12476087A patent/JPS63289847A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6316492B2 (en) * | 1980-10-21 | 1988-04-08 | Kanebo Ltd | |
| JPS6018942A (en) * | 1983-07-13 | 1985-01-31 | Mitsubishi Electric Corp | Heat radiating member for electronic part |
| JPS6217140B2 (en) * | 1983-08-20 | 1987-04-16 | Matsushita Electric Ind Co Ltd |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5325265A (en) * | 1988-11-10 | 1994-06-28 | Mcnc | High performance integrated circuit chip package |
| US5285108A (en) * | 1991-06-21 | 1994-02-08 | Compaq Computer Corporation | Cooling system for integrated circuits |
| WO1999016128A1 (en) * | 1997-09-19 | 1999-04-01 | Hitachi, Ltd. | Semiconductor module |
| WO2002099880A1 (en) * | 2001-05-30 | 2002-12-12 | Hitachi, Ltd. | Semiconductor device |
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