JPS60180156A - 半導体立体回路素子の製造方法 - Google Patents

半導体立体回路素子の製造方法

Info

Publication number
JPS60180156A
JPS60180156A JP59035318A JP3531884A JPS60180156A JP S60180156 A JPS60180156 A JP S60180156A JP 59035318 A JP59035318 A JP 59035318A JP 3531884 A JP3531884 A JP 3531884A JP S60180156 A JPS60180156 A JP S60180156A
Authority
JP
Japan
Prior art keywords
film
spinel
single crystal
silicon
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59035318A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0337740B2 (enExample
Inventor
Takao Hashimoto
孝男 橋本
Isao Nakano
中野　勇男
Hiroyuki Aoe
青江　弘行
Takashi Nakakado
中門　孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59035318A priority Critical patent/JPS60180156A/ja
Publication of JPS60180156A publication Critical patent/JPS60180156A/ja
Publication of JPH0337740B2 publication Critical patent/JPH0337740B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
JP59035318A 1984-02-28 1984-02-28 半導体立体回路素子の製造方法 Granted JPS60180156A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59035318A JPS60180156A (ja) 1984-02-28 1984-02-28 半導体立体回路素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59035318A JPS60180156A (ja) 1984-02-28 1984-02-28 半導体立体回路素子の製造方法

Publications (2)

Publication Number Publication Date
JPS60180156A true JPS60180156A (ja) 1985-09-13
JPH0337740B2 JPH0337740B2 (enExample) 1991-06-06

Family

ID=12438458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59035318A Granted JPS60180156A (ja) 1984-02-28 1984-02-28 半導体立体回路素子の製造方法

Country Status (1)

Country Link
JP (1) JPS60180156A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04101426U (ja) * 1991-01-29 1992-09-02 旭硝子株式会社 天窓用複層ガラス構造

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5338278A (en) * 1976-09-20 1978-04-08 Fujitsu Ltd Semiconductor device
JPS5821854A (ja) * 1981-07-31 1983-02-08 Sanyo Electric Co Ltd 半導体回路素子
JPS5868963A (ja) * 1981-10-19 1983-04-25 Fujitsu Ltd 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5338278A (en) * 1976-09-20 1978-04-08 Fujitsu Ltd Semiconductor device
JPS5821854A (ja) * 1981-07-31 1983-02-08 Sanyo Electric Co Ltd 半導体回路素子
JPS5868963A (ja) * 1981-10-19 1983-04-25 Fujitsu Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04101426U (ja) * 1991-01-29 1992-09-02 旭硝子株式会社 天窓用複層ガラス構造

Also Published As

Publication number Publication date
JPH0337740B2 (enExample) 1991-06-06

Similar Documents

Publication Publication Date Title
JP2615390B2 (ja) 炭化シリコン電界効果トランジスタの製造方法
JPS6213819B2 (enExample)
JPS5915495B2 (ja) 半導体装置
US4216491A (en) Semiconductor integrated circuit isolated through dielectric material
JPS60180156A (ja) 半導体立体回路素子の製造方法
JPS6029222B2 (ja) 固体電子装置の製造方法
JPS5910271A (ja) 半導体装置
JPS59161060A (ja) 半導体デバイスの製造方法
JPS5912020B2 (ja) 半導体装置の製造方法
JPS60161653A (ja) 半導体立体回路素子の製造方法
JPS5931216B2 (ja) 半導体装置の製造方法
JPS6188543A (ja) 半導体装置の製造方法
JPH0542825B2 (enExample)
JPS60785B2 (ja) Ｍｏｓ型半導体装置の製造方法
JPH0247853B2 (enExample)
JPS5968950A (ja) 半導体装置の製造方法
JPS60208854A (ja) 半導体立体回路素子の製造方法
JPS5854663A (ja) 半導体装置の製造方法
JPS6118350B2 (enExample)
JPS60115265A (ja) 半導体装置及びその製造方法
JPH0336307B2 (enExample)
JPS60123048A (ja) 半導体立体回路素子の製造方法
JPH01162358A (ja) 積層構造ｍｉｓ型半導体装置形成方法
JPS6376424A (ja) 半導体装置の製造方法
JPS60124845A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term