JPS60170260A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS60170260A
JPS60170260A JP59025381A JP2538184A JPS60170260A JP S60170260 A JPS60170260 A JP S60170260A JP 59025381 A JP59025381 A JP 59025381A JP 2538184 A JP2538184 A JP 2538184A JP S60170260 A JPS60170260 A JP S60170260A
Authority
JP
Japan
Prior art keywords
layer
amorphous silicon
source
thin film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59025381A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464181B2 (enrdf_load_stackoverflow
Inventor
Yasuhiro Nasu
安宏 那須
Satoru Kawai
悟 川井
Kenichi Yanai
梁井　健一
Atsushi Inoue
淳 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59025381A priority Critical patent/JPS60170260A/ja
Publication of JPS60170260A publication Critical patent/JPS60170260A/ja
Publication of JPH0464181B2 publication Critical patent/JPH0464181B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
JP59025381A 1984-02-14 1984-02-14 薄膜トランジスタの製造方法 Granted JPS60170260A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59025381A JPS60170260A (ja) 1984-02-14 1984-02-14 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59025381A JPS60170260A (ja) 1984-02-14 1984-02-14 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS60170260A true JPS60170260A (ja) 1985-09-03
JPH0464181B2 JPH0464181B2 (enrdf_load_stackoverflow) 1992-10-14

Family

ID=12164277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59025381A Granted JPS60170260A (ja) 1984-02-14 1984-02-14 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS60170260A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61139069A (ja) * 1984-12-10 1986-06-26 Fuji Xerox Co Ltd 薄膜トランジスタおよびその製造方法
JPS62128566A (ja) * 1985-11-29 1987-06-10 Seiko Instr & Electronics Ltd 薄膜トランジスタの製造方法
JPS62140467A (ja) * 1985-12-13 1987-06-24 Sharp Corp 薄膜トランジスタの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61139069A (ja) * 1984-12-10 1986-06-26 Fuji Xerox Co Ltd 薄膜トランジスタおよびその製造方法
JPS62128566A (ja) * 1985-11-29 1987-06-10 Seiko Instr & Electronics Ltd 薄膜トランジスタの製造方法
JPS62140467A (ja) * 1985-12-13 1987-06-24 Sharp Corp 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPH0464181B2 (enrdf_load_stackoverflow) 1992-10-14

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term