JPS6016802A - 半導体用原料ガスの純化剤およびその使用方法 - Google Patents
半導体用原料ガスの純化剤およびその使用方法Info
- Publication number
- JPS6016802A JPS6016802A JP58120646A JP12064683A JPS6016802A JP S6016802 A JPS6016802 A JP S6016802A JP 58120646 A JP58120646 A JP 58120646A JP 12064683 A JP12064683 A JP 12064683A JP S6016802 A JPS6016802 A JP S6016802A
- Authority
- JP
- Japan
- Prior art keywords
- carrier
- gas
- raw material
- semiconductor
- material gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000002994 raw material Substances 0.000 title claims abstract description 20
- 239000012629 purifying agent Substances 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 8
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 238000005984 hydrogenation reaction Methods 0.000 claims 2
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims 1
- KIUKXJAPPMFGSW-MNSSHETKSA-N hyaluronan Chemical compound CC(=O)N[C@H]1[C@H](O)O[C@H](CO)[C@@H](O)C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O[C@H]2[C@@H](C(O[C@H]3[C@@H]([C@@H](O)[C@H](O)[C@H](O3)C(O)=O)O)[C@H](O)[C@@H](CO)O2)NC(C)=O)[C@@H](C(O)=O)O1 KIUKXJAPPMFGSW-MNSSHETKSA-N 0.000 claims 1
- 229940099552 hyaluronan Drugs 0.000 claims 1
- 229920002674 hyaluronan Polymers 0.000 claims 1
- 230000001376 precipitating effect Effects 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 38
- 238000001179 sorption measurement Methods 0.000 abstract description 19
- 229910000077 silane Inorganic materials 0.000 abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 5
- 238000010926 purge Methods 0.000 abstract description 3
- 239000003463 adsorbent Substances 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 description 23
- 229910052760 oxygen Inorganic materials 0.000 description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 22
- 239000003054 catalyst Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000000746 purification Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000410518 Cyrano Species 0.000 description 2
- 239000012494 Quartz wool Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000004678 hydrides Chemical group 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- -1 Warn-bu Chemical compound 0.000 description 1
- 229910017817 a-Ge Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- JYIMWRSJCRRYNK-UHFFFAOYSA-N dialuminum;disodium;oxygen(2-);silicon(4+);hydrate Chemical compound O.[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Na+].[Na+].[Al+3].[Al+3].[Si+4] JYIMWRSJCRRYNK-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/06—Hydrogen phosphides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/046—Purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
- C01B6/34—Purification; Stabilisation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58120646A JPS6016802A (ja) | 1983-07-01 | 1983-07-01 | 半導体用原料ガスの純化剤およびその使用方法 |
| US06/622,757 US4565677A (en) | 1983-07-01 | 1984-06-20 | Method for purifying raw material gas for use in semiconductor manufacturing and purifier for use in said method and method of manufacturing said purifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58120646A JPS6016802A (ja) | 1983-07-01 | 1983-07-01 | 半導体用原料ガスの純化剤およびその使用方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6016802A true JPS6016802A (ja) | 1985-01-28 |
| JPH054321B2 JPH054321B2 (enExample) | 1993-01-19 |
Family
ID=14791371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58120646A Granted JPS6016802A (ja) | 1983-07-01 | 1983-07-01 | 半導体用原料ガスの純化剤およびその使用方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4565677A (enExample) |
| JP (1) | JPS6016802A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60209249A (ja) * | 1984-04-02 | 1985-10-21 | Olympus Optical Co Ltd | 工業用原料ガスの純化剤，その製造方法およびその使用方法 |
| JPS63169719A (ja) * | 1987-01-08 | 1988-07-13 | Mitsubishi Electric Corp | 化学反応装置 |
| JPH04128673U (ja) * | 1990-06-18 | 1992-11-24 | 株式会社ホンゴウリミテド | 箸ジヨイナー及び箸置き |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4659552A (en) * | 1986-07-21 | 1987-04-21 | Hercules Incorporated | Scavengers for the removal of impurities from arsine and phosphine |
| US4716181A (en) * | 1986-07-21 | 1987-12-29 | Hercules Incorporated | Scavengers for the removal of impurities from arsine and phosphine |
| US4696953A (en) * | 1986-07-21 | 1987-09-29 | Hercules Incorporated | Scavengers for the removal of impurities from arsine and phosphine |
| US4761395A (en) * | 1987-03-24 | 1988-08-02 | Advanced Technology Materials, Inc. | Process and composition for purifying arsine, phosphine, ammonia, and inert gases to remove Lewis acid and oxidant impurities therefrom |
| US4976933A (en) * | 1987-07-13 | 1990-12-11 | Ethyl Corporation | Hydrogen stream purification |
| DE3805282A1 (de) * | 1988-02-19 | 1989-08-31 | Wacker Chemitronic | Verfahren zur entfernung von n-dotierenden verunreinigungen aus bei der gasphasenabscheidung von silicium anfallenden fluessigen oder gasfoermigen stoffen |
| JP2732262B2 (ja) * | 1988-09-26 | 1998-03-25 | 日本パイオニクス株式会社 | アルシンの精製方法 |
| KR960010082B1 (ko) * | 1988-09-26 | 1996-07-25 | 니혼 파이오닉스 가부시끼가이샤 | 기체성 수소화물의 정제방법 |
| IT1246358B (it) * | 1990-07-12 | 1994-11-17 | Getters Spa | Processo per eliminare impurita' da un gas idruro |
| DE69425003T2 (de) * | 1993-02-11 | 2001-03-08 | The Boc Group Plc, Windlesham | Verfahren zur Reinigung von Gasströmen |
| WO2000023174A1 (en) * | 1998-10-22 | 2000-04-27 | Matheson Tri Gas, Inc. | Scavenger for reducing impurities in a gas and methods and apparatuses for making and using same |
| US7250072B2 (en) * | 2003-11-19 | 2007-07-31 | Air Products And Chemicals, Inc. | Removal of sulfur-containing impurities from volatile metal hydrides |
| US7087102B2 (en) * | 2004-02-26 | 2006-08-08 | Air Products And Chemicals, Inc. | Process for purification of germane |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5688380A (en) * | 1979-12-21 | 1981-07-17 | Canon Inc | Amorphous hydrogenated silicon photoconductive layer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1681702A (en) * | 1925-11-12 | 1928-08-21 | Karl Muller | Method for purifying gases |
| US2547874A (en) * | 1948-05-24 | 1951-04-03 | Ernest D Klema | Hydrogen purification method |
| US2826480A (en) * | 1953-02-12 | 1958-03-11 | British Oxygen Co Ltd | Removal of oxygen or hydrogen from gases |
| US4353788A (en) * | 1980-08-26 | 1982-10-12 | The United States Of America As Represented By The United States Department Of Energy | RF Sputtering for preparing substantially pure amorphous silicon monohydride |
-
1983
- 1983-07-01 JP JP58120646A patent/JPS6016802A/ja active Granted
-
1984
- 1984-06-20 US US06/622,757 patent/US4565677A/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5688380A (en) * | 1979-12-21 | 1981-07-17 | Canon Inc | Amorphous hydrogenated silicon photoconductive layer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60209249A (ja) * | 1984-04-02 | 1985-10-21 | Olympus Optical Co Ltd | 工業用原料ガスの純化剤，その製造方法およびその使用方法 |
| JPS63169719A (ja) * | 1987-01-08 | 1988-07-13 | Mitsubishi Electric Corp | 化学反応装置 |
| JPH04128673U (ja) * | 1990-06-18 | 1992-11-24 | 株式会社ホンゴウリミテド | 箸ジヨイナー及び箸置き |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH054321B2 (enExample) | 1993-01-19 |
| US4565677A (en) | 1986-01-21 |
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