JPH054321B2 - - Google Patents

Info

Publication number
JPH054321B2
JPH054321B2 JP58120646A JP12064683A JPH054321B2 JP H054321 B2 JPH054321 B2 JP H054321B2 JP 58120646 A JP58120646 A JP 58120646A JP 12064683 A JP12064683 A JP 12064683A JP H054321 B2 JPH054321 B2 JP H054321B2
Authority
JP
Japan
Prior art keywords
raw material
carrier
material gas
semiconductor raw
hydrogenated amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58120646A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6016802A (ja
Inventor
Atsushi Yusa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Sanso Co Ltd
Olympus Corp
Original Assignee
Daido Sanso Co Ltd
Olympus Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daido Sanso Co Ltd, Olympus Corp filed Critical Daido Sanso Co Ltd
Priority to JP58120646A priority Critical patent/JPS6016802A/ja
Priority to US06/622,757 priority patent/US4565677A/en
Publication of JPS6016802A publication Critical patent/JPS6016802A/ja
Publication of JPH054321B2 publication Critical patent/JPH054321B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/06Hydrogen phosphides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/04Hydrides of silicon
    • C01B33/046Purification
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C01B6/34Purification; Stabilisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
JP58120646A 1983-07-01 1983-07-01 半導体用原料ガスの純化剤およびその使用方法 Granted JPS6016802A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58120646A JPS6016802A (ja) 1983-07-01 1983-07-01 半導体用原料ガスの純化剤およびその使用方法
US06/622,757 US4565677A (en) 1983-07-01 1984-06-20 Method for purifying raw material gas for use in semiconductor manufacturing and purifier for use in said method and method of manufacturing said purifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58120646A JPS6016802A (ja) 1983-07-01 1983-07-01 半導体用原料ガスの純化剤およびその使用方法

Publications (2)

Publication Number Publication Date
JPS6016802A JPS6016802A (ja) 1985-01-28
JPH054321B2 true JPH054321B2 (enExample) 1993-01-19

Family

ID=14791371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58120646A Granted JPS6016802A (ja) 1983-07-01 1983-07-01 半導体用原料ガスの純化剤およびその使用方法

Country Status (2)

Country Link
US (1) US4565677A (enExample)
JP (1) JPS6016802A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60209249A (ja) * 1984-04-02 1985-10-21 Olympus Optical Co Ltd 工業用原料ガスの純化剤,その製造方法およびその使用方法
US4659552A (en) * 1986-07-21 1987-04-21 Hercules Incorporated Scavengers for the removal of impurities from arsine and phosphine
US4716181A (en) * 1986-07-21 1987-12-29 Hercules Incorporated Scavengers for the removal of impurities from arsine and phosphine
US4696953A (en) * 1986-07-21 1987-09-29 Hercules Incorporated Scavengers for the removal of impurities from arsine and phosphine
JPH0658890B2 (ja) * 1987-01-08 1994-08-03 三菱電機株式会社 化学反応装置
US4761395A (en) * 1987-03-24 1988-08-02 Advanced Technology Materials, Inc. Process and composition for purifying arsine, phosphine, ammonia, and inert gases to remove Lewis acid and oxidant impurities therefrom
US4976933A (en) * 1987-07-13 1990-12-11 Ethyl Corporation Hydrogen stream purification
DE3805282A1 (de) * 1988-02-19 1989-08-31 Wacker Chemitronic Verfahren zur entfernung von n-dotierenden verunreinigungen aus bei der gasphasenabscheidung von silicium anfallenden fluessigen oder gasfoermigen stoffen
JP2732262B2 (ja) * 1988-09-26 1998-03-25 日本パイオニクス株式会社 アルシンの精製方法
KR960010082B1 (ko) * 1988-09-26 1996-07-25 니혼 파이오닉스 가부시끼가이샤 기체성 수소화물의 정제방법
JPH04128673U (ja) * 1990-06-18 1992-11-24 株式会社ホンゴウリミテド 箸ジヨイナー及び箸置き
IT1246358B (it) * 1990-07-12 1994-11-17 Getters Spa Processo per eliminare impurita' da un gas idruro
DE69425003T2 (de) * 1993-02-11 2001-03-08 The Boc Group Plc, Windlesham Verfahren zur Reinigung von Gasströmen
WO2000023174A1 (en) * 1998-10-22 2000-04-27 Matheson Tri Gas, Inc. Scavenger for reducing impurities in a gas and methods and apparatuses for making and using same
US7250072B2 (en) * 2003-11-19 2007-07-31 Air Products And Chemicals, Inc. Removal of sulfur-containing impurities from volatile metal hydrides
US7087102B2 (en) * 2004-02-26 2006-08-08 Air Products And Chemicals, Inc. Process for purification of germane

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1681702A (en) * 1925-11-12 1928-08-21 Karl Muller Method for purifying gases
US2547874A (en) * 1948-05-24 1951-04-03 Ernest D Klema Hydrogen purification method
US2826480A (en) * 1953-02-12 1958-03-11 British Oxygen Co Ltd Removal of oxygen or hydrogen from gases
JPS5688380A (en) * 1979-12-21 1981-07-17 Canon Inc Amorphous hydrogenated silicon photoconductive layer
US4353788A (en) * 1980-08-26 1982-10-12 The United States Of America As Represented By The United States Department Of Energy RF Sputtering for preparing substantially pure amorphous silicon monohydride

Also Published As

Publication number Publication date
US4565677A (en) 1986-01-21
JPS6016802A (ja) 1985-01-28

Similar Documents

Publication Publication Date Title
JPH054321B2 (enExample)
US4237150A (en) Method of producing hydrogenated amorphous silicon film
JP5075627B2 (ja) Uv線を用いたシリコン含有膜の低温エピタキシャル成長
KR102301071B1 (ko) 전자 가스의 저감 및 정제 및 탄화수소 스트림으로부터의 수은제거를 위한 다공성 중합체
US5051117A (en) Process for removing gaseous contaminating compounds from carrier gases containing halosilane compounds
US4460673A (en) Method of producing amorphous silicon layer and its manufacturing apparatus
JP3727470B2 (ja) 炭素含有量の少ない多結晶シリコンの製造方法
US8268046B2 (en) Removal of impurities from hydrogen-containing materials
WO2011122959A1 (en) Process for the production of disilane
US4683125A (en) Method for purifying an industrial raw material gas and a purifier for use in said method and a method of manufacturing said purifier
Yusa et al. Ultrahigh purification of silane for semiconductor silicon
JP2641265B2 (ja) 水素の精製方法
JPH1066823A (ja) 気相化学蒸着装置
JPH0573830B2 (enExample)
JPS61190943A (ja) 反応・処理装置内の清浄化および反応・処理用気相物質の純化方法、および反応・処理装置
JP4014700B2 (ja) 結晶薄膜製造方法
JP2002261020A (ja) 多結晶Si膜の形成方法
Wiesmann Method of producing hydrogenated amorphous silicon film
JPH06196422A (ja) 半導体結晶成長装置および成長法
WO2000023174A1 (en) Scavenger for reducing impurities in a gas and methods and apparatuses for making and using same
Takaishi et al. Compact purifier for silane gas
JPH0294430A (ja) 光cvd装置
JPH0364019A (ja) 半導体薄膜
Senthil et al. Adsorption and desorption kinetics of organosilanes at Si (001) surfaces
JPH0468291B2 (enExample)