JPS60165729A - 半導体高圧酸化装置 - Google Patents
半導体高圧酸化装置Info
- Publication number
- JPS60165729A JPS60165729A JP59020990A JP2099084A JPS60165729A JP S60165729 A JPS60165729 A JP S60165729A JP 59020990 A JP59020990 A JP 59020990A JP 2099084 A JP2099084 A JP 2099084A JP S60165729 A JPS60165729 A JP S60165729A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- pressure
- substrate
- wafer
- 100atms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 230000001590 oxidative effect Effects 0.000 title abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 230000003647 oxidation Effects 0.000 claims description 30
- 238000007254 oxidation reaction Methods 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 239000012298 atmosphere Substances 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract 6
- 230000000630 rising effect Effects 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 31
- 239000010408 film Substances 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59020990A JPS60165729A (ja) | 1984-02-08 | 1984-02-08 | 半導体高圧酸化装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59020990A JPS60165729A (ja) | 1984-02-08 | 1984-02-08 | 半導体高圧酸化装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60165729A true JPS60165729A (ja) | 1985-08-28 |
| JPH0568851B2 JPH0568851B2 (enrdf_load_stackoverflow) | 1993-09-29 |
Family
ID=12042567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59020990A Granted JPS60165729A (ja) | 1984-02-08 | 1984-02-08 | 半導体高圧酸化装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60165729A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01280320A (ja) * | 1988-05-06 | 1989-11-10 | Tel Sagami Ltd | 半導体加圧酸化方法 |
| JPH01295425A (ja) * | 1988-02-29 | 1989-11-29 | Tel Sagami Ltd | 酸化装置 |
| JPH02130925A (ja) * | 1988-11-11 | 1990-05-18 | Tel Sagami Ltd | 縦型加圧酸化装置 |
| WO2005006426A1 (ja) * | 2003-07-09 | 2005-01-20 | Tokyo Electron Limited | 高圧熱処理装置 |
-
1984
- 1984-02-08 JP JP59020990A patent/JPS60165729A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01295425A (ja) * | 1988-02-29 | 1989-11-29 | Tel Sagami Ltd | 酸化装置 |
| JPH01280320A (ja) * | 1988-05-06 | 1989-11-10 | Tel Sagami Ltd | 半導体加圧酸化方法 |
| JPH02130925A (ja) * | 1988-11-11 | 1990-05-18 | Tel Sagami Ltd | 縦型加圧酸化装置 |
| WO2005006426A1 (ja) * | 2003-07-09 | 2005-01-20 | Tokyo Electron Limited | 高圧熱処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0568851B2 (enrdf_load_stackoverflow) | 1993-09-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |