JPS6016455A - 相補型ｍｉｓ半導体集積回路装置 - Google Patents

相補型ｍｉｓ半導体集積回路装置

Info

Publication number
JPS6016455A
JPS6016455A JP58124186A JP12418683A JPS6016455A JP S6016455 A JPS6016455 A JP S6016455A JP 58124186 A JP58124186 A JP 58124186A JP 12418683 A JP12418683 A JP 12418683A JP S6016455 A JPS6016455 A JP S6016455A
Authority
JP
Japan
Prior art keywords
semiconductor region
semiconductor
semiconductor substrate
region
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58124186A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518260B2 (enrdf_load_stackoverflow
Inventor
Noboru Itomi
登 井富
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP58124186A priority Critical patent/JPS6016455A/ja
Publication of JPS6016455A publication Critical patent/JPS6016455A/ja
Publication of JPH0518260B2 publication Critical patent/JPH0518260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58124186A 1983-07-08 1983-07-08 相補型ｍｉｓ半導体集積回路装置 Granted JPS6016455A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58124186A JPS6016455A (ja) 1983-07-08 1983-07-08 相補型ｍｉｓ半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58124186A JPS6016455A (ja) 1983-07-08 1983-07-08 相補型ｍｉｓ半導体集積回路装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4124885A Division JPH05152523A (ja) 1992-05-18 1992-05-18 相補型ｍｉｓ半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS6016455A true JPS6016455A (ja) 1985-01-28
JPH0518260B2 JPH0518260B2 (enrdf_load_stackoverflow) 1993-03-11

Family

ID=14879108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58124186A Granted JPS6016455A (ja) 1983-07-08 1983-07-08 相補型ｍｉｓ半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS6016455A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176619A (ja) * 1985-02-01 1986-08-08 Mitsui Toatsu Chem Inc α−メチルスチレン共重合体

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193171A (enrdf_load_stackoverflow) * 1974-12-30 1976-08-16
JPS5238890A (en) * 1975-09-23 1977-03-25 Mitsubishi Electric Corp Semiconductor device
JPS54104290A (en) * 1978-02-02 1979-08-16 Nec Corp Complementary mos integrated circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193171A (enrdf_load_stackoverflow) * 1974-12-30 1976-08-16
JPS5238890A (en) * 1975-09-23 1977-03-25 Mitsubishi Electric Corp Semiconductor device
JPS54104290A (en) * 1978-02-02 1979-08-16 Nec Corp Complementary mos integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176619A (ja) * 1985-02-01 1986-08-08 Mitsui Toatsu Chem Inc α−メチルスチレン共重合体

Also Published As

Publication number Publication date
JPH0518260B2 (enrdf_load_stackoverflow) 1993-03-11

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