JPS6016441A - 半導体基板面の絶縁分離方法 - Google Patents
半導体基板面の絶縁分離方法Info
- Publication number
- JPS6016441A JPS6016441A JP12530283A JP12530283A JPS6016441A JP S6016441 A JPS6016441 A JP S6016441A JP 12530283 A JP12530283 A JP 12530283A JP 12530283 A JP12530283 A JP 12530283A JP S6016441 A JPS6016441 A JP S6016441A
- Authority
- JP
- Japan
- Prior art keywords
- film
- groove
- isolation region
- silicon
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 title claims abstract description 19
- 238000002955 isolation Methods 0.000 title abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 8
- 238000000206 photolithography Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 238000000992 sputter etching Methods 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- 238000000926 separation method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-OUBTZVSYSA-N silicon-29 atom Chemical compound [29Si] XUIMIQQOPSSXEZ-OUBTZVSYSA-N 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 241000293849 Cordylanthus Species 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 nitride nitride Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 208000002564 X-linked cardiac valvular dysplasia Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12530283A JPS6016441A (ja) | 1983-07-08 | 1983-07-08 | 半導体基板面の絶縁分離方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12530283A JPS6016441A (ja) | 1983-07-08 | 1983-07-08 | 半導体基板面の絶縁分離方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6016441A true JPS6016441A (ja) | 1985-01-28 |
| JPS6352466B2 JPS6352466B2 (enrdf_load_stackoverflow) | 1988-10-19 |
Family
ID=14906719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12530283A Granted JPS6016441A (ja) | 1983-07-08 | 1983-07-08 | 半導体基板面の絶縁分離方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6016441A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5541440A (en) * | 1993-07-28 | 1996-07-30 | Mitsubishi Denki Kabushiki Kaisha | Isolation structure for semiconductor device |
| KR20200010221A (ko) * | 2017-05-19 | 2020-01-30 | 쌩-고벵 글래스 프랑스 | 유리 시트를 파단하는 방법 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7396832B2 (ja) * | 2019-06-19 | 2023-12-12 | 株式会社ブリヂストン | ホースの残存寿命予測方法及びホースの残存寿命予測システム |
-
1983
- 1983-07-08 JP JP12530283A patent/JPS6016441A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5541440A (en) * | 1993-07-28 | 1996-07-30 | Mitsubishi Denki Kabushiki Kaisha | Isolation structure for semiconductor device |
| KR20200010221A (ko) * | 2017-05-19 | 2020-01-30 | 쌩-고벵 글래스 프랑스 | 유리 시트를 파단하는 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6352466B2 (enrdf_load_stackoverflow) | 1988-10-19 |
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