JPS60158626A - 半導体露光装置 - Google Patents

半導体露光装置

Info

Publication number
JPS60158626A
JPS60158626A JP59013317A JP1331784A JPS60158626A JP S60158626 A JPS60158626 A JP S60158626A JP 59013317 A JP59013317 A JP 59013317A JP 1331784 A JP1331784 A JP 1331784A JP S60158626 A JPS60158626 A JP S60158626A
Authority
JP
Japan
Prior art keywords
wafer
temperature
temperature control
chuck
wafer chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59013317A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0542804B2 (https=
Inventor
Shinji Tsutsui
慎二 筒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59013317A priority Critical patent/JPS60158626A/ja
Publication of JPS60158626A publication Critical patent/JPS60158626A/ja
Priority to US06/942,954 priority patent/US4720732A/en
Publication of JPH0542804B2 publication Critical patent/JPH0542804B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP59013317A 1984-01-30 1984-01-30 半導体露光装置 Granted JPS60158626A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59013317A JPS60158626A (ja) 1984-01-30 1984-01-30 半導体露光装置
US06/942,954 US4720732A (en) 1984-01-30 1986-12-17 Pattern transfer apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59013317A JPS60158626A (ja) 1984-01-30 1984-01-30 半導体露光装置

Publications (2)

Publication Number Publication Date
JPS60158626A true JPS60158626A (ja) 1985-08-20
JPH0542804B2 JPH0542804B2 (https=) 1993-06-29

Family

ID=11829791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59013317A Granted JPS60158626A (ja) 1984-01-30 1984-01-30 半導体露光装置

Country Status (2)

Country Link
US (1) US4720732A (https=)
JP (1) JPS60158626A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170935U (https=) * 1987-04-27 1988-11-07
JPH01226002A (ja) * 1988-03-07 1989-09-08 Tokyo Electron Ltd 半導体製造装置及び処理方法
JP2004354981A (ja) * 2003-05-06 2004-12-16 Fuji Photo Film Co Ltd 画像パターン記録方法
JP2011082549A (ja) * 2005-09-29 2011-04-21 Asml Netherlands Bv リソグラフィ装置、デバイス製造方法およびそれによって製造されたデバイス
JP2018045248A (ja) * 2012-09-14 2018-03-22 株式会社ニコン 基板処理装置

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4963921A (en) * 1985-06-24 1990-10-16 Canon Kabushiki Kaisha Device for holding a mask
JPH0785112B2 (ja) * 1987-02-16 1995-09-13 キヤノン株式会社 ステージ装置
US4864356A (en) * 1987-04-21 1989-09-05 Brother Kogyo Kabushiki Kaisha Exposure device for image recording apparatus
KR910002215A (ko) * 1988-06-27 1991-01-31 하라 레이노스께 영상 형성 장치 및 방법
EP0357423B1 (en) * 1988-09-02 1995-03-15 Canon Kabushiki Kaisha An exposure apparatus
US5453851A (en) * 1992-07-31 1995-09-26 E. I. Du Pont De Nemours And Company Error reduction methods in scanning systems
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3487383B2 (ja) * 1995-07-06 2004-01-19 株式会社ニコン 露光装置及びそれを用いる素子製造方法
US5877843A (en) * 1995-09-12 1999-03-02 Nikon Corporation Exposure apparatus
US6645701B1 (en) * 1995-11-22 2003-11-11 Nikon Corporation Exposure method and exposure apparatus
US6342941B1 (en) * 1996-03-11 2002-01-29 Nikon Corporation Exposure apparatus and method preheating a mask before exposing; a conveyance method preheating a mask before exposing; and a device manufacturing system and method manufacturing a device according to the exposure apparatus and method
JP3695000B2 (ja) 1996-08-08 2005-09-14 株式会社ニコン 露光方法及び露光装置
JPH10208994A (ja) * 1997-01-16 1998-08-07 Nec Corp 露光方法及び露光装置
JPH11307430A (ja) 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
TW513617B (en) * 1999-04-21 2002-12-11 Asml Corp Lithographic projection apparatus and method of manufacturing a device using a lithographic projection apparatus
US6445439B1 (en) * 1999-12-27 2002-09-03 Svg Lithography Systems, Inc. EUV reticle thermal management
JP3870002B2 (ja) * 2000-04-07 2007-01-17 キヤノン株式会社 露光装置
EP1276016B1 (en) * 2001-07-09 2009-06-10 Canon Kabushiki Kaisha Exposure apparatus
JP2004228456A (ja) * 2003-01-27 2004-08-12 Canon Inc 露光装置
JP4311711B2 (ja) * 2003-02-24 2009-08-12 キヤノン株式会社 露光装置及びデバイス製造方法
SG109000A1 (en) * 2003-07-16 2005-02-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1713115B1 (en) 2004-02-04 2016-05-04 Nikon Corporation Exposure apparatus, exposure method, and device producing method
JP5167572B2 (ja) * 2004-02-04 2013-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US8749762B2 (en) 2004-05-11 2014-06-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060086321A1 (en) * 2004-10-22 2006-04-27 Advantech Global, Ltd Substrate-to-mask alignment and securing system with temperature control for use in an automated shadow mask vacuum deposition process
JP4781049B2 (ja) * 2005-08-30 2011-09-28 キヤノン株式会社 露光装置およびデバイス製造方法
NL1036460A1 (nl) * 2008-02-20 2009-08-24 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL2003339A (en) * 2008-09-08 2010-03-15 Asml Netherlands Bv Lithographic apparatus and alignment method.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532022A (en) * 1978-08-26 1980-03-06 Nippon Telegr & Teleph Corp <Ntt> Correcting method of elongation or contraction quantity of wafer
JPS5543844A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Method and apparatus for photoresist sensitizing process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3865254A (en) * 1973-05-21 1975-02-11 Kasker Instr Inc Prealignment system for an optical alignment and exposure instrument
GB1578259A (en) * 1977-05-11 1980-11-05 Philips Electronic Associated Methods of manufacturing solid-state devices apparatus for use therein and devices manufactured thereby
US4202623A (en) * 1979-01-08 1980-05-13 The Perkin-Elmer Corporation Temperature compensated alignment system
US4376581A (en) * 1979-12-20 1983-03-15 Censor Patent- Und Versuchs-Anstalt Method of positioning disk-shaped workpieces, preferably semiconductor wafers
JPS56112732A (en) * 1980-02-12 1981-09-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Exposure device
JPS57136325A (en) * 1981-02-18 1982-08-23 Toshiba Corp Transfer device for pattern
JPS57169244A (en) * 1981-04-13 1982-10-18 Canon Inc Temperature controller for mask and wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532022A (en) * 1978-08-26 1980-03-06 Nippon Telegr & Teleph Corp <Ntt> Correcting method of elongation or contraction quantity of wafer
JPS5543844A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Method and apparatus for photoresist sensitizing process

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170935U (https=) * 1987-04-27 1988-11-07
JPH01226002A (ja) * 1988-03-07 1989-09-08 Tokyo Electron Ltd 半導体製造装置及び処理方法
JP2004354981A (ja) * 2003-05-06 2004-12-16 Fuji Photo Film Co Ltd 画像パターン記録方法
JP2011082549A (ja) * 2005-09-29 2011-04-21 Asml Netherlands Bv リソグラフィ装置、デバイス製造方法およびそれによって製造されたデバイス
JP2018045248A (ja) * 2012-09-14 2018-03-22 株式会社ニコン 基板処理装置
JP2019061279A (ja) * 2012-09-14 2019-04-18 株式会社ニコン 基板処理装置及びデバイス製造方法
JP2019152885A (ja) * 2012-09-14 2019-09-12 株式会社ニコン デバイス製造方法

Also Published As

Publication number Publication date
JPH0542804B2 (https=) 1993-06-29
US4720732A (en) 1988-01-19

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