JPS5532022A - Correcting method of elongation or contraction quantity of wafer - Google Patents

Correcting method of elongation or contraction quantity of wafer

Info

Publication number
JPS5532022A
JPS5532022A JP10417578A JP10417578A JPS5532022A JP S5532022 A JPS5532022 A JP S5532022A JP 10417578 A JP10417578 A JP 10417578A JP 10417578 A JP10417578 A JP 10417578A JP S5532022 A JPS5532022 A JP S5532022A
Authority
JP
Japan
Prior art keywords
wafer
patterns
elongation
contraction
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10417578A
Other languages
Japanese (ja)
Inventor
Toshiyuki Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10417578A priority Critical patent/JPS5532022A/en
Publication of JPS5532022A publication Critical patent/JPS5532022A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To perform correction for deviations based on the elongation or contraction of a wafer by feeding the fluid of the temperature correcting the elongation or contraction produced in the wafer into the cavity of a support stage while holding the wafer through vacuum attraction and performing overlap exposure.
CONSTITUTION: A wafer 2 is placed on a support stage 1 and is kept held by the vacuum through a vacuum suction piping 4, in which state an overlap exposure mask is superposed on the wafer 2 by leaving a slight spacing and the deviations from the patterns having already been formed on the wafer up to the previous time are observed with a microscope or the like. According to whether the patterns on the wafer 2 contract or expand from the patterns of the mask, the heated or cooled fluid is fed into the cavity 5 to let both patterns align, after which the next overlap exposure is performed.
COPYRIGHT: (C)1980,JPO&Japio
JP10417578A 1978-08-26 1978-08-26 Correcting method of elongation or contraction quantity of wafer Pending JPS5532022A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10417578A JPS5532022A (en) 1978-08-26 1978-08-26 Correcting method of elongation or contraction quantity of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10417578A JPS5532022A (en) 1978-08-26 1978-08-26 Correcting method of elongation or contraction quantity of wafer

Publications (1)

Publication Number Publication Date
JPS5532022A true JPS5532022A (en) 1980-03-06

Family

ID=14373677

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10417578A Pending JPS5532022A (en) 1978-08-26 1978-08-26 Correcting method of elongation or contraction quantity of wafer

Country Status (1)

Country Link
JP (1) JPS5532022A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5796529A (en) * 1980-12-09 1982-06-15 Fujitsu Ltd Microwave plasma treating method
JPS58176936A (en) * 1982-04-09 1983-10-17 Fujitsu Ltd Substrate cooling method
JPS5946030A (en) * 1982-09-08 1984-03-15 Canon Inc Sticking and fixing method for mask or wafer
JPS60158626A (en) * 1984-01-30 1985-08-20 Canon Inc Semiconductor exposure device
US7542263B2 (en) 2004-02-19 2009-06-02 Asml Holding N.V. Overlay correction by reducing wafer slipping after alignment
US7992318B2 (en) * 2007-01-22 2011-08-09 Tokyo Electron Limited Heating apparatus, heating method, and computer readable storage medium
CN102914951A (en) * 2011-08-04 2013-02-06 上海微电子装备有限公司 Pre-aligning device for photoetching device
JP2013102137A (en) * 2011-10-14 2013-05-23 Canon Inc Imprint apparatus and goods manufacturing method using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4811639U (en) * 1971-06-19 1973-02-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4811639U (en) * 1971-06-19 1973-02-09

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5796529A (en) * 1980-12-09 1982-06-15 Fujitsu Ltd Microwave plasma treating method
JPH0313734B2 (en) * 1982-04-09 1991-02-25 Fujitsu Ltd
JPS58176936A (en) * 1982-04-09 1983-10-17 Fujitsu Ltd Substrate cooling method
JPS5946030A (en) * 1982-09-08 1984-03-15 Canon Inc Sticking and fixing method for mask or wafer
JPH0114703B2 (en) * 1982-09-08 1989-03-14 Canon Kk
JPH0542804B2 (en) * 1984-01-30 1993-06-29 Canon Kk
JPS60158626A (en) * 1984-01-30 1985-08-20 Canon Inc Semiconductor exposure device
US7542263B2 (en) 2004-02-19 2009-06-02 Asml Holding N.V. Overlay correction by reducing wafer slipping after alignment
US7786607B2 (en) 2004-02-19 2010-08-31 Asml Holding N.V. Overlay correction by reducing wafer slipping after alignment
US7992318B2 (en) * 2007-01-22 2011-08-09 Tokyo Electron Limited Heating apparatus, heating method, and computer readable storage medium
US8186077B2 (en) 2007-01-22 2012-05-29 Tokyo Electron Limited Heating apparatus, heating method, and computer readable storage medium
CN102914951A (en) * 2011-08-04 2013-02-06 上海微电子装备有限公司 Pre-aligning device for photoetching device
JP2013102137A (en) * 2011-10-14 2013-05-23 Canon Inc Imprint apparatus and goods manufacturing method using the same
US9566741B2 (en) 2011-10-14 2017-02-14 Canon Kabushiki Kaisha Imprint method, imprint apparatus, and article manufacturing method
US9892949B2 (en) 2011-10-14 2018-02-13 Canon Kabushiki Kaisha Imprint method, imprint apparatus, and article manufacturing method

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