JPS60154549A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60154549A
JPS60154549A JP59011234A JP1123484A JPS60154549A JP S60154549 A JPS60154549 A JP S60154549A JP 59011234 A JP59011234 A JP 59011234A JP 1123484 A JP1123484 A JP 1123484A JP S60154549 A JPS60154549 A JP S60154549A
Authority
JP
Japan
Prior art keywords
layer
silicon layer
type
polycrystalline
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59011234A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0438141B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59011234A priority Critical patent/JPS60154549A/ja
Publication of JPS60154549A publication Critical patent/JPS60154549A/ja
Publication of JPH0438141B2 publication Critical patent/JPH0438141B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59011234A 1984-01-24 1984-01-24 半導体装置の製造方法 Granted JPS60154549A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59011234A JPS60154549A (ja) 1984-01-24 1984-01-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59011234A JPS60154549A (ja) 1984-01-24 1984-01-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60154549A true JPS60154549A (ja) 1985-08-14
JPH0438141B2 JPH0438141B2 (enrdf_load_stackoverflow) 1992-06-23

Family

ID=11772245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59011234A Granted JPS60154549A (ja) 1984-01-24 1984-01-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60154549A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119578A (ja) * 1986-11-07 1988-05-24 Seiko Epson Corp 半導体装置
JPH01264254A (ja) * 1988-04-15 1989-10-20 Agency Of Ind Science & Technol 積層型半導体装置の製造方法
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
JP2004048029A (ja) * 2002-07-09 2004-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2005109498A (ja) * 2003-09-30 2005-04-21 Internatl Business Mach Corp <Ibm> 結晶方位が異なるウェハ上に構築されたデバイス層を有する３次元ｃｍｏｓ集積回路
JP2008501239A (ja) * 2004-05-28 2008-01-17 フリースケール セミコンダクター インコーポレイテッド 独立して歪むｎチャネル型及びｐチャネル型トランジスタ
JP2009094492A (ja) * 2007-09-20 2009-04-30 Semiconductor Energy Lab Co Ltd 表示装置
US8338830B2 (en) 2002-07-09 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2020123738A (ja) * 2009-12-11 2020-08-13 株式会社半導体エネルギー研究所 半導体装置
JP2022141651A (ja) * 2009-10-30 2022-09-29 株式会社半導体エネルギー研究所 表示装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119578A (ja) * 1986-11-07 1988-05-24 Seiko Epson Corp 半導体装置
JPH01264254A (ja) * 1988-04-15 1989-10-20 Agency Of Ind Science & Technol 積層型半導体装置の製造方法
US7179726B2 (en) 1992-11-06 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7799665B2 (en) 1992-11-06 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US8338830B2 (en) 2002-07-09 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2004048029A (ja) * 2002-07-09 2004-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2005109498A (ja) * 2003-09-30 2005-04-21 Internatl Business Mach Corp <Ibm> 結晶方位が異なるウェハ上に構築されたデバイス層を有する３次元ｃｍｏｓ集積回路
JP2008501239A (ja) * 2004-05-28 2008-01-17 フリースケール セミコンダクター インコーポレイテッド 独立して歪むｎチャネル型及びｐチャネル型トランジスタ
JP2009094492A (ja) * 2007-09-20 2009-04-30 Semiconductor Energy Lab Co Ltd 表示装置
JP2022141651A (ja) * 2009-10-30 2022-09-29 株式会社半導体エネルギー研究所 表示装置
JP2024037749A (ja) * 2009-10-30 2024-03-19 株式会社半導体エネルギー研究所 表示装置
JP2020123738A (ja) * 2009-12-11 2020-08-13 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JPH0438141B2 (enrdf_load_stackoverflow) 1992-06-23

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