JPS60149151U - エミツタ短絡構造を有するターンオン時間の短いサイリスタ - Google Patents

エミツタ短絡構造を有するターンオン時間の短いサイリスタ

Info

Publication number
JPS60149151U
JPS60149151U JP2205185U JP2205185U JPS60149151U JP S60149151 U JPS60149151 U JP S60149151U JP 2205185 U JP2205185 U JP 2205185U JP 2205185 U JP2205185 U JP 2205185U JP S60149151 U JPS60149151 U JP S60149151U
Authority
JP
Japan
Prior art keywords
thyristor
time
turn
control electrode
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2205185U
Other languages
English (en)
Inventor
ヴエルナー　トウルスキー
Original Assignee
ゼミクロン　ゲゼルシヤフト　フユア　グライヒリヒターバウ　ウント　エレクトローニク　ミツト　ベシユレンクテル　ハフツング
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ゼミクロン　ゲゼルシヤフト　フユア　グライヒリヒターバウ　ウント　エレクトローニク　ミツト　ベシユレンクテル　ハフツング filed Critical ゼミクロン　ゲゼルシヤフト　フユア　グライヒリヒターバウ　ウント　エレクトローニク　ミツト　ベシユレンクテル　ハフツング
Publication of JPS60149151U publication Critical patent/JPS60149151U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図は本考案による円環形の突出部を有するサイリス
タの円盤形の半導体素子の平面図、第２図は本考案によ
る円盤形の垣絡部′を同心的に囲んでいる円環形の制御
電極が設けられたサイリスタの６角形の半導体素子の平
面図である。 １・・・円環形の半導体素子、１１・・・エミツタ層、
１１ａ，ｌｌｂ・・・同心領域、ｌｌｃ・・・中断個所
、１？・・・ベース層、１５・・・制御電極、１２１・
・・円環形の突出部−、１２２・・・細かく分布された
突出部、３・・・６角形の半導体素子、３１・・・エミ
ツタ層、３ｌａｗ−３１ｂ・・・同心領域、３２・・・
ベース層、３５・・・円環形の制御電極、３２１・・ご
円環形の突出部。

Claims (3)

    【実用新案登録請求の範囲】
  1. （１）エミツタ短絡構造を有す名ターンオン時間の−短
    いサイリスクであうで、ターンオン時間に↓って定めら
    れる点弧伝播領域がエミツタ層を貫いたベース層の突出
    部がないサイリスタに於で、エミツタ層１１の制御電極
    と相対している，縁部から予め設定されたターンオン時
    間によって定められる距離のところで制御電極と同心に
    形成されたベース層の円環形突出部１２１，３ミツタ層
    １１が分割されてお り、そして該円環形突出部に続いている制御電極から離
    れた方のエミーツタ層領域１ｌｂ，３１ｂが所望の過電
    流負荷容量に、よって定められる面積広がりを有してい
    ることを特徴とするサイリスタ。
  2. （２）前記円環形の突出部１２１，３２１は、２つ以上
    のセグメントから成っていることを特徴とする実用新案
    登録請求の範囲第１項に記載のサイリスタ。
  3. （３）前記円環形の突出部１２１，３２１に続き制御電
    極から離れている領域１ｌｂ，３１ｂの少なくとも一部
    分に細かく配分されたベース層の突出部１２２を具備し
    ていることを特徴とする実用新案登録請求の範囲第１項
    もしくは第２項゜に記載のサイリスタ。
JP2205185U 1980-01-11 1985-02-20 エミツタ短絡構造を有するターンオン時間の短いサイリスタ Pending JPS60149151U (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19803000804 DE3000804A1 (de) 1980-01-11 1980-01-11 Thyristor mit kurzgeschlossenem emitter fuer kurze stromflussdauer
DE3000804.9 1980-01-11

Publications (1)

Publication Number Publication Date
JPS60149151U true JPS60149151U (ja) 1985-10-03

Family

ID=6091835

Family Applications (2)

Application Number Title Priority Date Filing Date
JP256581A Pending JPS56104466A (en) 1980-01-11 1981-01-10 Thyristor with emitter shorting structure for short conduction period
JP2205185U Pending JPS60149151U (ja) 1980-01-11 1985-02-20 エミツタ短絡構造を有するターンオン時間の短いサイリスタ

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP256581A Pending JPS56104466A (en) 1980-01-11 1981-01-10 Thyristor with emitter shorting structure for short conduction period

Country Status (3)

Country Link
EP (1) EP0032264B1 (ja)
JP (2) JPS56104466A (ja)
DE (1) DE3000804A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2153586B (en) * 1984-01-31 1987-06-24 Westinghouse Brake & Signal Gate turn-off thyristor
US6227600B1 (en) * 1999-08-24 2001-05-08 Wen-Ho Chen Sun visor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5483385A (en) * 1977-12-16 1979-07-03 Hitachi Ltd Thyristor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638080A (en) * 1970-02-17 1972-01-25 Bbc Brown Boveri & Cie Semiconductor element for switching purposes
US4176371A (en) * 1976-01-09 1979-11-27 Westinghouse Electric Corp. Thyristor fired by overvoltage
US4060825A (en) * 1976-02-09 1977-11-29 Westinghouse Electric Corporation High speed high power two terminal solid state switch fired by dV/dt
ZA775629B (en) * 1976-10-29 1978-08-30 Westinghouse Electric Corp An improvement in or relating to thyristor fired by collapsing voltage

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5483385A (en) * 1977-12-16 1979-07-03 Hitachi Ltd Thyristor

Also Published As

Publication number Publication date
DE3000804A1 (de) 1981-07-16
EP0032264A3 (en) 1983-05-04
JPS56104466A (en) 1981-08-20
EP0032264B1 (de) 1985-05-22
EP0032264A2 (de) 1981-07-22

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