JPS60145376A - タングステンシリサイド膜の成長方法 - Google Patents

タングステンシリサイド膜の成長方法

Info

Publication number
JPS60145376A
JPS60145376A JP24824583A JP24824583A JPS60145376A JP S60145376 A JPS60145376 A JP S60145376A JP 24824583 A JP24824583 A JP 24824583A JP 24824583 A JP24824583 A JP 24824583A JP S60145376 A JPS60145376 A JP S60145376A
Authority
JP
Japan
Prior art keywords
tungsten silicide
film
silicon substrate
silicide film
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24824583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6261668B2 (enrdf_load_html_response
Inventor
Yoshimi Shiotani
喜美 塩谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP24824583A priority Critical patent/JPS60145376A/ja
Publication of JPS60145376A publication Critical patent/JPS60145376A/ja
Publication of JPS6261668B2 publication Critical patent/JPS6261668B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP24824583A 1983-12-30 1983-12-30 タングステンシリサイド膜の成長方法 Granted JPS60145376A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24824583A JPS60145376A (ja) 1983-12-30 1983-12-30 タングステンシリサイド膜の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24824583A JPS60145376A (ja) 1983-12-30 1983-12-30 タングステンシリサイド膜の成長方法

Publications (2)

Publication Number Publication Date
JPS60145376A true JPS60145376A (ja) 1985-07-31
JPS6261668B2 JPS6261668B2 (enrdf_load_html_response) 1987-12-22

Family

ID=17175307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24824583A Granted JPS60145376A (ja) 1983-12-30 1983-12-30 タングステンシリサイド膜の成長方法

Country Status (1)

Country Link
JP (1) JPS60145376A (enrdf_load_html_response)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6311669A (ja) * 1986-06-30 1988-01-19 Ulvac Corp Ｃｖｄ法
JPS6311668A (ja) * 1986-06-30 1988-01-19 Ulvac Corp Ｃｖｄ法
JPS6326369A (ja) * 1986-07-19 1988-02-03 Ulvac Corp Ｃｖｄ法
JPS6326367A (ja) * 1986-07-18 1988-02-03 Ulvac Corp Ｃｖｄ法
JPS6326366A (ja) * 1986-07-18 1988-02-03 Ulvac Corp Ｃｖｄ法
JPS6326368A (ja) * 1986-07-19 1988-02-03 Ulvac Corp Ｃｖｄ法
JPS6417866A (en) * 1987-07-10 1989-01-20 Toshiba Corp Formation of film of high-melting-point metal
JPH0390572A (ja) * 1989-08-25 1991-04-16 Applied Materials Inc 半導体ウェーハ上へのタングステン層のｃｖｄ蒸着方法
JPH03223462A (ja) * 1990-01-27 1991-10-02 Fujitsu Ltd タングステン膜の形成方法
US5230847A (en) * 1990-06-26 1993-07-27 L'air Liquide, Societe Anonyme L'etude Et L'exploitation Des Procedes Georges Claude Method of forming refractory metal free standing shapes

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6311669A (ja) * 1986-06-30 1988-01-19 Ulvac Corp Ｃｖｄ法
JPS6311668A (ja) * 1986-06-30 1988-01-19 Ulvac Corp Ｃｖｄ法
JPS6326367A (ja) * 1986-07-18 1988-02-03 Ulvac Corp Ｃｖｄ法
JPS6326366A (ja) * 1986-07-18 1988-02-03 Ulvac Corp Ｃｖｄ法
JPS6326369A (ja) * 1986-07-19 1988-02-03 Ulvac Corp Ｃｖｄ法
JPS6326368A (ja) * 1986-07-19 1988-02-03 Ulvac Corp Ｃｖｄ法
JPS6417866A (en) * 1987-07-10 1989-01-20 Toshiba Corp Formation of film of high-melting-point metal
JPH0390572A (ja) * 1989-08-25 1991-04-16 Applied Materials Inc 半導体ウェーハ上へのタングステン層のｃｖｄ蒸着方法
JPH03223462A (ja) * 1990-01-27 1991-10-02 Fujitsu Ltd タングステン膜の形成方法
US5230847A (en) * 1990-06-26 1993-07-27 L'air Liquide, Societe Anonyme L'etude Et L'exploitation Des Procedes Georges Claude Method of forming refractory metal free standing shapes

Also Published As

Publication number Publication date
JPS6261668B2 (enrdf_load_html_response) 1987-12-22

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