JPS60140774U - 分子線エピタキシヤル成長装置 - Google Patents

分子線エピタキシヤル成長装置

Info

Publication number
JPS60140774U
JPS60140774U JP2591584U JP2591584U JPS60140774U JP S60140774 U JPS60140774 U JP S60140774U JP 2591584 U JP2591584 U JP 2591584U JP 2591584 U JP2591584 U JP 2591584U JP S60140774 U JPS60140774 U JP S60140774U
Authority
JP
Japan
Prior art keywords
molecular beam
epitaxial growth
beam epitaxial
growth equipment
separator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2591584U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6329743Y2 (enrdf_load_stackoverflow
Inventor
茂 岡村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2591584U priority Critical patent/JPS60140774U/ja
Publication of JPS60140774U publication Critical patent/JPS60140774U/ja
Application granted granted Critical
Publication of JPS6329743Y2 publication Critical patent/JPS6329743Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2591584U 1984-02-27 1984-02-27 分子線エピタキシヤル成長装置 Granted JPS60140774U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2591584U JPS60140774U (ja) 1984-02-27 1984-02-27 分子線エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2591584U JPS60140774U (ja) 1984-02-27 1984-02-27 分子線エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS60140774U true JPS60140774U (ja) 1985-09-18
JPS6329743Y2 JPS6329743Y2 (enrdf_load_stackoverflow) 1988-08-09

Family

ID=30521433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2591584U Granted JPS60140774U (ja) 1984-02-27 1984-02-27 分子線エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS60140774U (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162324A (ja) * 1986-01-13 1987-07-18 Sumitomo Electric Ind Ltd 超高真空用反応性ガス加熱導入装置
JPH0489392A (ja) * 1990-08-01 1992-03-23 Daido Sanso Kk Ｓｉ系結晶薄膜の製法
JPH05238881A (ja) * 1992-02-27 1993-09-17 Hoxan Corp ガスソース分子線エピタキシー装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5537238U (enrdf_load_stackoverflow) * 1978-08-31 1980-03-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5537238U (enrdf_load_stackoverflow) * 1978-08-31 1980-03-10

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162324A (ja) * 1986-01-13 1987-07-18 Sumitomo Electric Ind Ltd 超高真空用反応性ガス加熱導入装置
JPH0489392A (ja) * 1990-08-01 1992-03-23 Daido Sanso Kk Ｓｉ系結晶薄膜の製法
JPH05238881A (ja) * 1992-02-27 1993-09-17 Hoxan Corp ガスソース分子線エピタキシー装置

Also Published As

Publication number Publication date
JPS6329743Y2 (enrdf_load_stackoverflow) 1988-08-09

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