JPS60125726U - 化合物半導体ミラ−ウエハ - Google Patents

化合物半導体ミラ−ウエハ

Info

Publication number
JPS60125726U
JPS60125726U JP1984013672U JP1367284U JPS60125726U JP S60125726 U JPS60125726 U JP S60125726U JP 1984013672 U JP1984013672 U JP 1984013672U JP 1367284 U JP1367284 U JP 1367284U JP S60125726 U JPS60125726 U JP S60125726U
Authority
JP
Japan
Prior art keywords
compound semiconductor
mirror wafer
semiconductor mirror
abstract
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1984013672U
Other languages
English (en)
Inventor
山口　順
Original Assignee
住友電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友電気工業株式会社 filed Critical 住友電気工業株式会社
Priority to JP1984013672U priority Critical patent/JPS60125726U/ja
Priority to EP19920101245 priority patent/EP0489710A3/en
Priority to EP85300479A priority patent/EP0153028A3/en
Priority to US06/696,578 priority patent/US4628016A/en
Priority to CA000473463A priority patent/CA1211863A/en
Publication of JPS60125726U publication Critical patent/JPS60125726U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図は化合物半導体ウェハ臂開面に沿う長方形をフォ
トレジストによって覆い周囲をエツチングした場合ａと
、長方形を残してフォトレジストによって覆いこの長方
形をエツチングした場合すのメサ方向の縦断面図。第２
図は第１図と同じ条件で逆メサ方向の断面図を示す。第
３図はウェハを方向性のあるエツチング液でエツチング
した時のパターンを示す図。第４図はパターンひとつの
長手方向の断面図。第５図はパターンひとつの長手方向
に直角な方向の断面図。

Claims (1)

    【実用新案登録請求の範囲】
  1. 裏面にエツチングによってメサ方向を示すバタ・　−ン
    を形成した事を特徴とする化合物半導体ミラーウェハ。
JP1984013672U 1984-02-02 1984-02-02 化合物半導体ミラ−ウエハ Pending JPS60125726U (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1984013672U JPS60125726U (ja) 1984-02-02 1984-02-02 化合物半導体ミラ−ウエハ
EP19920101245 EP0489710A3 (en) 1984-02-02 1985-01-24 A mirror wafer of compound semiconductor
EP85300479A EP0153028A3 (en) 1984-02-02 1985-01-24 A mirror wafer of compound semiconductor
US06/696,578 US4628016A (en) 1984-02-02 1985-01-30 Mirror wafer of compound semiconductor
CA000473463A CA1211863A (en) 1984-02-02 1985-02-01 Mirror wafer of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984013672U JPS60125726U (ja) 1984-02-02 1984-02-02 化合物半導体ミラ−ウエハ

Publications (1)

Publication Number Publication Date
JPS60125726U true JPS60125726U (ja) 1985-08-24

Family

ID=11839682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984013672U Pending JPS60125726U (ja) 1984-02-02 1984-02-02 化合物半導体ミラ−ウエハ

Country Status (4)

Country Link
US (1) US4628016A (ja)
EP (2) EP0489710A3 (ja)
JP (1) JPS60125726U (ja)
CA (1) CA1211863A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273642A (ja) * 1985-09-26 1987-04-04 Hitachi Cable Ltd ＩｎＰ基板のメサ方向判別方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4114660C2 (de) * 1991-05-06 1997-09-18 Telefunken Microelectron Verfahren zur Herstellung glaspassivierter Halbleiterbauelemente
JPH08236442A (ja) * 1995-02-28 1996-09-13 Mitsubishi Electric Corp 半導体ウエハ，及びその製造方法
JP3397968B2 (ja) * 1996-03-29 2003-04-21 信越半導体株式会社 半導体単結晶インゴットのスライス方法
JP2001223145A (ja) * 2000-02-07 2001-08-17 Komatsu Ltd 特異な形態のドットマークを有する半導体ウェハとそのドットマークの形成方法
US6554687B1 (en) * 2000-09-27 2003-04-29 Virginia Semiconductor, Inc. Precise crystallographic-orientation alignment mark for a semiconductor wafer
US20070073448A1 (en) * 2003-08-19 2007-03-29 Renesas Technology Corp. Semiconductor device having a hole or a step of normal mesa shape as viewed from any cross-section and manufacturing method of the same
JP2005064068A (ja) * 2003-08-19 2005-03-10 Renesas Technology Corp 半導体装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5575221A (en) * 1978-12-04 1980-06-06 Fujitsu Ltd Manufacturing semiconductor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100424A (ja) * 1981-12-10 1983-06-15 Nippon Telegr & Teleph Corp <Ntt> リソグラフイ用↑¬合せマ−クの形成方法
JPS6088536U (ja) * 1983-11-24 1985-06-18 住友電気工業株式会社 化合物半導体ウエハ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5575221A (en) * 1978-12-04 1980-06-06 Fujitsu Ltd Manufacturing semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273642A (ja) * 1985-09-26 1987-04-04 Hitachi Cable Ltd ＩｎＰ基板のメサ方向判別方法

Also Published As

Publication number Publication date
EP0153028A3 (en) 1988-08-31
EP0489710A2 (en) 1992-06-10
EP0153028A2 (en) 1985-08-28
EP0489710A3 (en) 1993-12-15
CA1211863A (en) 1986-09-23
US4628016A (en) 1986-12-09

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