JPS60123022A - 気相成長方法 - Google Patents
気相成長方法Info
- Publication number
- JPS60123022A JPS60123022A JP58231805A JP23180583A JPS60123022A JP S60123022 A JPS60123022 A JP S60123022A JP 58231805 A JP58231805 A JP 58231805A JP 23180583 A JP23180583 A JP 23180583A JP S60123022 A JPS60123022 A JP S60123022A
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- substrate
- susceptor
- chamber
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P14/2911—
-
- H10P14/24—
-
- H10P14/3221—
-
- H10P14/3421—
-
- H10P14/3442—
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58231805A JPS60123022A (ja) | 1983-12-08 | 1983-12-08 | 気相成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58231805A JPS60123022A (ja) | 1983-12-08 | 1983-12-08 | 気相成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60123022A true JPS60123022A (ja) | 1985-07-01 |
| JPH0586643B2 JPH0586643B2 (enExample) | 1993-12-13 |
Family
ID=16929292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58231805A Granted JPS60123022A (ja) | 1983-12-08 | 1983-12-08 | 気相成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60123022A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100092666A1 (en) * | 2006-12-25 | 2010-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5350973A (en) * | 1976-10-20 | 1978-05-09 | Matsushita Electric Ind Co Ltd | Vapor phase growth method and vapor phase growth apparatus |
| JPS53110366A (en) * | 1977-03-04 | 1978-09-27 | Gnii Pi Redkometa | Device for epitaxially growing semiconductor period structure from gaseous phase |
-
1983
- 1983-12-08 JP JP58231805A patent/JPS60123022A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5350973A (en) * | 1976-10-20 | 1978-05-09 | Matsushita Electric Ind Co Ltd | Vapor phase growth method and vapor phase growth apparatus |
| JPS53110366A (en) * | 1977-03-04 | 1978-09-27 | Gnii Pi Redkometa | Device for epitaxially growing semiconductor period structure from gaseous phase |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100092666A1 (en) * | 2006-12-25 | 2010-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
| TWI424475B (zh) * | 2006-12-25 | 2014-01-21 | 東京威力科創股份有限公司 | Film forming apparatus and film forming method |
| US8696814B2 (en) * | 2006-12-25 | 2014-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0586643B2 (enExample) | 1993-12-13 |
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