JPS60123022A - 気相成長方法 - Google Patents

気相成長方法

Info

Publication number
JPS60123022A
JPS60123022A JP58231805A JP23180583A JPS60123022A JP S60123022 A JPS60123022 A JP S60123022A JP 58231805 A JP58231805 A JP 58231805A JP 23180583 A JP23180583 A JP 23180583A JP S60123022 A JPS60123022 A JP S60123022A
Authority
JP
Japan
Prior art keywords
reaction
substrate
susceptor
chamber
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58231805A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586643B2 (enExample
Inventor
Kazumi Kasai
和美 河西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58231805A priority Critical patent/JPS60123022A/ja
Publication of JPS60123022A publication Critical patent/JPS60123022A/ja
Publication of JPH0586643B2 publication Critical patent/JPH0586643B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type

Landscapes

  • Recrystallisation Techniques (AREA)
JP58231805A 1983-12-08 1983-12-08 気相成長方法 Granted JPS60123022A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58231805A JPS60123022A (ja) 1983-12-08 1983-12-08 気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58231805A JPS60123022A (ja) 1983-12-08 1983-12-08 気相成長方法

Publications (2)

Publication Number Publication Date
JPS60123022A true JPS60123022A (ja) 1985-07-01
JPH0586643B2 JPH0586643B2 (enExample) 1993-12-13

Family

ID=16929292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58231805A Granted JPS60123022A (ja) 1983-12-08 1983-12-08 気相成長方法

Country Status (1)

Country Link
JP (1) JPS60123022A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100092666A1 (en) * 2006-12-25 2010-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350973A (en) * 1976-10-20 1978-05-09 Matsushita Electric Ind Co Ltd Vapor phase growth method and vapor phase growth apparatus
JPS53110366A (en) * 1977-03-04 1978-09-27 Gnii Pi Redkometa Device for epitaxially growing semiconductor period structure from gaseous phase

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350973A (en) * 1976-10-20 1978-05-09 Matsushita Electric Ind Co Ltd Vapor phase growth method and vapor phase growth apparatus
JPS53110366A (en) * 1977-03-04 1978-09-27 Gnii Pi Redkometa Device for epitaxially growing semiconductor period structure from gaseous phase

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100092666A1 (en) * 2006-12-25 2010-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method
TWI424475B (zh) * 2006-12-25 2014-01-21 東京威力科創股份有限公司 Film forming apparatus and film forming method
US8696814B2 (en) * 2006-12-25 2014-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method

Also Published As

Publication number Publication date
JPH0586643B2 (enExample) 1993-12-13

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