JPS60123022A - 気相成長方法 - Google Patents

気相成長方法

Info

Publication number
JPS60123022A
JPS60123022A JP23180583A JP23180583A JPS60123022A JP S60123022 A JPS60123022 A JP S60123022A JP 23180583 A JP23180583 A JP 23180583A JP 23180583 A JP23180583 A JP 23180583A JP S60123022 A JPS60123022 A JP S60123022A
Authority
JP
Japan
Prior art keywords
substrate
susceptor
reaction
chamber
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23180583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586643B2 (enrdf_load_stackoverflow
Inventor
Kazumi Kasai
和美 河西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23180583A priority Critical patent/JPS60123022A/ja
Publication of JPS60123022A publication Critical patent/JPS60123022A/ja
Publication of JPH0586643B2 publication Critical patent/JPH0586643B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP23180583A 1983-12-08 1983-12-08 気相成長方法 Granted JPS60123022A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23180583A JPS60123022A (ja) 1983-12-08 1983-12-08 気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23180583A JPS60123022A (ja) 1983-12-08 1983-12-08 気相成長方法

Publications (2)

Publication Number Publication Date
JPS60123022A true JPS60123022A (ja) 1985-07-01
JPH0586643B2 JPH0586643B2 (enrdf_load_stackoverflow) 1993-12-13

Family

ID=16929292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23180583A Granted JPS60123022A (ja) 1983-12-08 1983-12-08 気相成長方法

Country Status (1)

Country Link
JP (1) JPS60123022A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100092666A1 (en) * 2006-12-25 2010-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350973A (en) * 1976-10-20 1978-05-09 Matsushita Electric Ind Co Ltd Vapor phase growth method and vapor phase growth apparatus
JPS53110366A (en) * 1977-03-04 1978-09-27 Gnii Pi Redkometa Device for epitaxially growing semiconductor period structure from gaseous phase

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350973A (en) * 1976-10-20 1978-05-09 Matsushita Electric Ind Co Ltd Vapor phase growth method and vapor phase growth apparatus
JPS53110366A (en) * 1977-03-04 1978-09-27 Gnii Pi Redkometa Device for epitaxially growing semiconductor period structure from gaseous phase

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100092666A1 (en) * 2006-12-25 2010-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method
TWI424475B (zh) * 2006-12-25 2014-01-21 Tokyo Electron Ltd Film forming apparatus and film forming method
US8696814B2 (en) * 2006-12-25 2014-04-15 Tokyo Electron Limited Film deposition apparatus and film deposition method

Also Published As

Publication number Publication date
JPH0586643B2 (enrdf_load_stackoverflow) 1993-12-13

Similar Documents

Publication Publication Date Title
CN1265432C (zh) 具有可移动的百叶窗挡板的反应器
JPH01290222A (ja) 半導体気相成長方法
JPS6291495A (ja) 半導体薄膜気相成長法
CN103160814B (zh) 反应室及其气流控制方法
JPS60123022A (ja) 気相成長方法
WO2004020688A1 (ja) 金属硫化物薄膜およびその製造方法
JPS63226917A (ja) 半導体気相処理装置
CN113604874B (zh) 一种气相外延系统及其维护操作方法
JPH06338466A (ja) 気相成長装置
JP2005303168A (ja) 気相成長装置
Gupta et al. Chemical vapor deposition of ferrite thin films
JP4256698B2 (ja) 多層薄膜製造装置及び製造方法
JP2007109685A (ja) 化合物半導体製造装置および化合物半導体製造方法
JPH10223539A (ja) 有機金属気相成長方法とその気相成長装置
JPS63248797A (ja) 気相エピタキシヤル成長装置
JPH026389A (ja) 半導体薄膜気相成長装置
JPH02126632A (ja) 化合物半導体結晶層の気相成長方法及びそれに用いる反応管
JP2817298B2 (ja) 気相エピタキシャル成長装置
JPS62182196A (ja) 気相成長装置
JPH0794414A (ja) Ｃｖｄ装置
JPS63292620A (ja) 単原子層薄膜堆積装置
KR950011016B1 (ko) 초고진공 화학기상 증착법을 이용한 반도체 에피탁시 성장법
JPS61210620A (ja) 半導体結晶成長装置
JP2620546B2 (ja) 化合物半導体のエピタキシヤル層の製造方法
JPH06349739A (ja) 薄膜製造装置