JPS60114577A - 化学処理装置 - Google Patents
化学処理装置Info
- Publication number
- JPS60114577A JPS60114577A JP22253283A JP22253283A JPS60114577A JP S60114577 A JPS60114577 A JP S60114577A JP 22253283 A JP22253283 A JP 22253283A JP 22253283 A JP22253283 A JP 22253283A JP S60114577 A JPS60114577 A JP S60114577A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- vacuum container
- load
- plasma
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000126 substance Substances 0.000 title description 4
- 239000000463 material Substances 0.000 claims abstract description 3
- 238000012993 chemical processing Methods 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000004809 Teflon Substances 0.000 abstract description 3
- 229920006362 Teflon® Polymers 0.000 abstract description 3
- 238000009832 plasma treatment Methods 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 25
- 239000010408 film Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22253283A JPS60114577A (ja) | 1983-11-26 | 1983-11-26 | 化学処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22253283A JPS60114577A (ja) | 1983-11-26 | 1983-11-26 | 化学処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60114577A true JPS60114577A (ja) | 1985-06-21 |
| JPH058271B2 JPH058271B2 (enrdf_load_stackoverflow) | 1993-02-01 |
Family
ID=16783904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22253283A Granted JPS60114577A (ja) | 1983-11-26 | 1983-11-26 | 化学処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60114577A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01104778A (ja) * | 1987-10-16 | 1989-04-21 | Matsushita Electric Ind Co Ltd | プラズマｃｖｄ装置 |
| JPH01136970A (ja) * | 1987-11-20 | 1989-05-30 | Matsushita Electric Ind Co Ltd | プラズマｃｖｄ装置のクリーニング方法 |
| JP2012004108A (ja) * | 2010-05-18 | 2012-01-05 | Semiconductor Energy Lab Co Ltd | プラズマ処理装置 |
| JP2012099715A (ja) * | 2010-11-04 | 2012-05-24 | Tokyo Electron Ltd | プラズマ処理装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5688316A (en) * | 1979-12-21 | 1981-07-17 | Fuji Electric Co Ltd | Apparatus for forming thin layer |
| JPS5832410A (ja) * | 1981-08-06 | 1983-02-25 | ザ・パ−キン−エルマ−・コ−ポレイシヨン | ガス状減圧環境下で構造物を処理する方法及び装置 |
-
1983
- 1983-11-26 JP JP22253283A patent/JPS60114577A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5688316A (en) * | 1979-12-21 | 1981-07-17 | Fuji Electric Co Ltd | Apparatus for forming thin layer |
| JPS5832410A (ja) * | 1981-08-06 | 1983-02-25 | ザ・パ−キン−エルマ−・コ−ポレイシヨン | ガス状減圧環境下で構造物を処理する方法及び装置 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01104778A (ja) * | 1987-10-16 | 1989-04-21 | Matsushita Electric Ind Co Ltd | プラズマｃｖｄ装置 |
| JPH01136970A (ja) * | 1987-11-20 | 1989-05-30 | Matsushita Electric Ind Co Ltd | プラズマｃｖｄ装置のクリーニング方法 |
| JP2012004108A (ja) * | 2010-05-18 | 2012-01-05 | Semiconductor Energy Lab Co Ltd | プラズマ処理装置 |
| JP2012099715A (ja) * | 2010-11-04 | 2012-05-24 | Tokyo Electron Ltd | プラズマ処理装置 |
| US9196461B2 (en) | 2010-11-04 | 2015-11-24 | Tokyo Electron Limited | Plasma processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH058271B2 (enrdf_load_stackoverflow) | 1993-02-01 |
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