JPS60103655A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPS60103655A
JPS60103655A JP58210811A JP21081183A JPS60103655A JP S60103655 A JPS60103655 A JP S60103655A JP 58210811 A JP58210811 A JP 58210811A JP 21081183 A JP21081183 A JP 21081183A JP S60103655 A JPS60103655 A JP S60103655A
Authority
JP
Japan
Prior art keywords
aluminum
wiring
bonding pad
semiconductor device
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58210811A
Other languages
English (en)
Inventor
Izumi Tezuka
手塚　泉
Shigeo Ishii
石井　重雄
Toru Inaba
稲葉　透
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58210811A priority Critical patent/JPS60103655A/ja
Priority to KR1019840006945A priority patent/KR850004175A/ko
Priority to GB08428394A priority patent/GB2149574A/en
Publication of JPS60103655A publication Critical patent/JPS60103655A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔技術分野〕 本発明は半導体装置におけるアルミニウム配線の耐湿性
向上技術に関するものである。
〔背景技術〕
現在のＩＣ（半導体集積回路）の配線材料には、主体と
してアルミニウムが用いられ、これが単層又は多層とし
て基体上に形成されている。
ところで純アルミニウムは水等圧対して短期間に粒界形
腐食を起しやすぐ、又、アルミ；ラムの基体シＩＪ　：
ｌンへの拡散による接合部のアロイヒツトを生じる等の
問題があり、アルミニウム中に数％程度のシリコンを含
有させたＡＡ’−８ｉ合金が使用されている。
さらにマイクレージョン対策として本発明者においテハ
、アルミニウム中にシリコンや銅を含有させたＡｌ−８
ｉ　−Ｃｕ　や、アルミニウムにニッケルな含有させた
Ａ　１−Ｎｉ合金を配線材料として用いることを検討し
、それぞれに効果をあげている。
しかし、Ａ　ｌ−Ｎｉ合金の場合、アルミニウム配線の
表面にニッケルをイオン打込みし、熱処理することによ
り形成でき、アルミニウムに比して耐食性が数倍も向上
するが、その反面、配線の硬度も高くなり、特にワイヤ
ポンディングパッド部ではボンディング時の高温化のた
め表面硬度が高くなり、現在のボンディング条件では不
圧着率が犬きくなることが問題となっているということ
が本発明者によってあきらかとされた。
〔発明の目的〕
本発明は上記の問題を解決するためになされたものであ
り、その目的とするところは、ボンディング不圧着不良
をなくし、しかも耐湿性の高い配線構造をもつ半導体装
置を提供することにある。
本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。
〔発明の概要〕
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。
すなわち、シリコン基体上にアルミニウムからなる配線
が形成され、この配線の一部がワイヤポンディングパッ
ド部となっている半導体装置であって、上記ワイヤポン
ディングパッド以外のアルミニウム配線に対しニッケル
をイオン打込みすることによる耐腐食性処理を施すこと
により、ワイヤポンディングパッド部ではボンディング
性を確保し、それ以外の部分では耐腐食性、耐湿性を向
上させて前記目的を達成する。
〔実施例１〕 第１図は本発明の一実施例を示すものでありで一層配線
構造の半導体装置におけるポンディングパッド部とその
近傍の断面図である。１はシリコン結晶基体で、図示さ
れないがその表面の一部に不純物選択拡散による半導体
素子領域が形成される。２は表面酸化膜（Ｓｉｎ２）、
３はアルきニウム配線で図示されないが配線の他端は前
記半導体素子等に接続されている。４けパッシベーショ
ン用絶縁膜でその一部を窓開し、露出したアルミニウム
面がボンディングパッド部となって金ワイヤ５をワイヤ
ボンディングすることになる。
上記アルミニウム配線３はポンディングパッド部以外の
少なくとも表面部分はニッケルを含むＡＩ！ｅＮ１層６
となっている。
上記アルミニウム配線３は純アルミニウムの代りにシリ
コンを含む（２〜５％程度）ＡＡＩ−８ｔを用い、ポン
ディングパッド部以外の少なくとも表面部分はニッケル
を含むｋｌ−８１−Ｎｉ層としてもよい。
第２図乃至第３図はアルミニウム配線の表面にニッケル
を導入するプロセスを断面図により示すものである。
すなわち、第２図において、アルミニウム蒸着、ホトレ
ジストによるバターニングエッチを行ってアルミニウム
配線（又はアルミニウム争シリコン配線）を形成した後
、ポンディングパッドとなる部分にホトレジストマスク
７を形成した状態でニッケル不純物のイオン打込みを行
うことによりニッケルをアルミニウム配線表面より選択
的に導入する。
この後、金ワイヤボンディング工程に入る。このボンデ
ィング工程では３５０〜４００℃の温度が約１０秒間加
えられる。この熱処理（または、この後の簡単な熱処理
）を利用することによって、アルミニウム配線（又は、
アルミニウム・シリコン配線）Ｋ選択的に導入したニッ
ケルなＡ７中に拡散させ、ＡＡ！−Ｎｉ合金（又は、Ａ
７−Ｎｉ−８１合金）を形成することができる。（第３
図（、）参照）この方法ではボンディング工程で加わる
熱を用いてニッケルを拡散させるため、熱処理工程を別
に設ける必要がなく、プロセスの変更なく、従来の工程
フローでＡＡ！−Ｎｉ配線（Ａｎ−Ｎｉ−８１配線）を
形成できるという効果が得られる。
また上記方法ではなくアニール処理を行いニッケルをア
ルミニウム配線中に拡散して、部分的にＡｌ−Ｎｉ合金
層（又は、Ａｌ−８１−Ｎｉ　合金層）６を形成しても
よい。（第３図（ｂ）参照）〔効果〕 上記実施例１で述べた本発明によれば、アルミニウム配
線（又はシリコン入りアルミニウム配線）においてポン
ディングパッド部以外をＡｌ−Ｎｉ合金としていること
により、配線の耐湿性向上を損うことなく、同時にポン
ディングパッド部における金ワイヤの不圧着不良を防止
できる。
なお本発明者の実験によればＰＣＴ　（高温高湿テス）
）１２１°ＣＲＨ１００％で純アルミニウム６０時間、
シリコン入゛リアルミニウム２００時間、ニッケル入り
アルミニウム（又はニッケル入りアルミニウムシリコン
）で１ｏｏｏ時間の耐湿性効果が得らねた。
また、不純物としてバナジウム（Ｐｄ　）、　白金（ｐ
ｔＬ　モリブデン（Ｍｏ）等を用いても同様な効果が得
られることが発明者の実験であきらがとされている。
〔実施例２〕 第４図は本発明の他の一実施例を示すものであって、−
増配線構造の半導体装置におけるポンディングパッド部
近傍の断面図である。
同図において、８けアルミニウムにニッケルを含有させ
たＡｌ−Ｎｉ合金よりなる配線（又はアルミニウムにシ
リコン及びニッケルを含有させたＡＡ！　−Ｎｉ−８１
合金よりなる配線）である。
９はポンディングパッド部となる純アルミニウム膜（又
はアルミニウムにシリコンを含有させたＡＡ！−８１ｇ
）であって、Ａ１１−Ｎｉ合金よりなる配線の上に部分
的に蒸着したものである。
この純アルミニウム膜等よりなるボンディングパラ１°
９は、パッシベイション膜４を形成し、ポンディングパ
ッドを窓開エッチ後、ポンディングパッド部以外の部分
なホトレジストマスクで覆った状態でアルミニウム等を
蒸着し、その後、ホトレジストマスクとその上の不要の
アルミニウムを除去スる「す７トオフ」技術を利用する
ことにより形成することができる。
〔効果〕
上記実施例２で述べた本発明によれば配ｍ８全体がＡＪ
−Ｎ１（又はＡ７−Ｎｉ−８１）から形成されているこ
とにより、耐湿性向上が損われることなく、しかもポン
ディングパッド部では純アルミニウム膜（又はＡ　１３
−　Ｓ　＋膜）９を介してワイヤボンディングされた金
ワイヤの不圧着不良を防止することができる。
〔実施例３〕 第５図は本発明のさらに他の一実施例を示すものであっ
て、多層（２層）配線構造の半導体装置におけるポンデ
ィングパッド近傍の断面図である。
同図において、８はＡｌ−Ｎｉ合金（又はＡｌ−Ｎｉ−
８層合金）よりなる第１層配線、１ｌｔｊ：層間絶縁膜
で例えばポリイミド系樹脂等がらなり、その一部をスル
ーホールエッチし、この上に純アルミニウム（又はシリ
コン入りアルミニウム）からなる第２層配線１２が形成
される。この第２層配線１２はポンディングパッド部以
外の部分にニッケル不純物イオン打込みを選択的に行う
ことによりＡ７−Ｎ１合金層】３を形成しである。１４
は第２層配線１２の上に形成されたパッシベイション膜
で例えばポリイミド系樹脂からなり、その一部をスルー
ホールエッチしてポンディングパッド部を窓開し、金ワ
イヤ５をボンディングすることになる。
〔効果〕
以上実施例３で述べた本発明によれば、第１層配線１０
はＡｌ−Ｎｉ合金（又はｈｌ−Ｎｌ−８＋合金）により
形成されていることにより、又、第２増配ｍ１２のうち
ポンディングパッド部以外の部分の少なくとも表面はＡ
Ｊ−Ｎｉ合金（又はＡ７−Ｎｉ　−８ｉ合金）により形
成されていることにより、耐湿性が損われることがなく
、一方、ポンディングパッド部は純ＡＩ（又はＡＪ−８
ｉ）であることによりボンディング不圧着不良を防止で
きる。
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいう゛までもない。
〔利用分野〕
本発明はアルミニウム配線を有する半導体装置全般に適
用できるものであり、特にポリイミド系有機樹脂をパッ
シベイション膜や層間絶縁膜に使用するアルミニウム多
層配線構造を有する半導体装置に応用して有効である。
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である半導体装置の電極形
成技術に適用した場合について説明したが、そねに限定
されるものではなく、たとえば、配線基板における電極
形成技術などに適用できる。
【図面の簡単な説明】
第１図は本発明の一実施例を示すものであって、−増配
線構造をもつ半導体装置の一部断面図である。 第２図、第３図（ａｌ、　（ｂ）は第１図に示した半導
体装置の製造プロセスの一部を示す工程断面図である。 第４図は本発明の他の一実施例を示すものであって一層
配線構造をもつ半導体装置の一部断面図である。 第５図は本発明の他の一実施例を示すものであって二層
配線構造をもつ半導体装置の一部断面図である。 に半導体基体、２：半導体酸化膜、３ニアルミニウム（
又はＡｌ−８ｔ　）配線、４：パッシベイション膜（ポ
リイミド系樹脂）、５：金ワイヤ、６：ＡＡ’−Ｎｉ　
（又ＦｉＡ　ｌ　−Ｎｉ−８ｉ　）配線、７：ホトレジ
マスク、８：Ａｌ−Ｎｉ　（又はｌ　−Ｎｌ−８ｉ）、
９：ポンディングパッド部（ＡＩ又はＡｌ−８＋）、１
０：第１層配ａＣｈｌ−Ｎｓ又はＡＪ−Ｎｌ−８＋）、
１１：層間絶縁膜（ポリイミド系樹脂）、１２：第２層
配線（ボンディング部）、１３：ｋｌ−Ｎｉ（又はパノ
ーＮ１−８ｉ）合金属、１４：パッシベイション絶縁膜
（ボリイミ第　１　図 第　２　図 第　３　図 （ぬ） （ｂ） 第　４　図 第　５　図

Claims (1)

  1. 【特許請求の範囲】 １、半導体基体の一主面上にアルミニウム又はシリコン
    を含むアルミニウムからなる配線が形成され、この配線
    の一部がワイヤポンディングパッドとなっている半導体
    装置であって、上記ワイヤポンディングパッドの少なく
    とも表面部具外の配線はアルミニウム以外の特定の不純
    物との合金による耐腐食性処理が施されていることを特
    徴とする半導体装置。 ２、上記特定の不純物はニッケルである特許請求の範囲
    第１項に記載の半導体装置。 ３、上記特定の不純物は、パラジウム、白金、モリブデ
    ンの三種の金属の中から選ばれた一つである特許請求の
    範囲第１項記載の半導体装置。 ４、上記特定の不純物はマスクを介してイオン打込みに
    よりアルミニウム配線内に導入されて合金とされている
    特許請求の範囲第１項又は第２項又は第３項に記載の半
    導体装置。 ５、　ワイヤポンディングパッド部は上記特定の不純物
    とアルミニウム（又はシリコンを含むアルミニウム）と
    の合金からなる配線の上に上記特定の不純物を含まない
    アルミニウム（又はシリコンを含むアルミニウム）を部
    分的に形成したものである特許請求の範囲第１項又は第
    ２項又は第３項に記載の半導体装置。 ６、基体の主面上にアルミニウム又はシリコン入りアル
    ミニウムよりなる配線を形成する工程と、前記アルミニ
    ウム配線（又はアルミニウムーシリコン配置！ｉりのワ
    イヤポンディングパッドとなる部分にホトレジストマス
    クを形成し、前記アルミニウム配線（又はアルミニウム
    ・シリコン配線）に撰択的に特定の不純物を導入する工
    程と、ワイヤポンディングパッドにワイヤをボンディン
    グする工程とを有することを特徴とする半導体装置の製
    造方法。 ７、上記特定の不純物は、ニッケルである特許請求の範
    囲第６項記載の半導体装置の製造方法。 ８、上記特定の不純物は、パラジウム、白金、モリプデ
    ンの３種の金属の中から選ばれた一つである特許請求の
    範囲第６項記載の半導体装置の製造方法。
JP58210811A 1983-11-11 1983-11-11 半導体装置およびその製造方法 Pending JPS60103655A (ja)

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JP58210811A JPS60103655A (ja) 1983-11-11 1983-11-11 半導体装置およびその製造方法
KR1019840006945A KR850004175A (ko) 1983-11-11 1984-11-06 반도체 장치 및 그 제조 방법
GB08428394A GB2149574A (en) 1983-11-11 1984-11-09 Semiconductor device and process of manufacture thereof

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Application Number Priority Date Filing Date Title
JP58210811A JPS60103655A (ja) 1983-11-11 1983-11-11 半導体装置およびその製造方法

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Publication Number Publication Date
JPS60103655A true JPS60103655A (ja) 1985-06-07

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GB (1) GB2149574A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156646A (ja) * 1988-12-09 1990-06-15 Nec Ic Microcomput Syst Ltd 集積回路装置
US4974052A (en) * 1988-10-14 1990-11-27 Mitsubishi Denki Kabushiki Kaisha Plastic packaged semiconductor device
JP2021150374A (ja) * 2020-03-17 2021-09-27 株式会社東芝 半導体装置および検査装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI95535C (fi) * 1991-12-09 1996-02-26 Polar Electro Oy Laite sydänsykkeen mittaukseen

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4974052A (en) * 1988-10-14 1990-11-27 Mitsubishi Denki Kabushiki Kaisha Plastic packaged semiconductor device
JPH02156646A (ja) * 1988-12-09 1990-06-15 Nec Ic Microcomput Syst Ltd 集積回路装置
JP2021150374A (ja) * 2020-03-17 2021-09-27 株式会社東芝 半導体装置および検査装置

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Publication number Publication date
GB2149574A (en) 1985-06-12
KR850004175A (ko) 1985-07-01
GB8428394D0 (en) 1984-12-19

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