JPS60101940A - イメ−ジセンサ - Google Patents

イメ−ジセンサ

Info

Publication number
JPS60101940A
JPS60101940A JP58208891A JP20889183A JPS60101940A JP S60101940 A JPS60101940 A JP S60101940A JP 58208891 A JP58208891 A JP 58208891A JP 20889183 A JP20889183 A JP 20889183A JP S60101940 A JPS60101940 A JP S60101940A
Authority
JP
Japan
Prior art keywords
layer
electrodes
bias voltage
ratio
resistance value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58208891A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0471342B2 (enExample
Inventor
Tsutomu Ishida
力 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP58208891A priority Critical patent/JPS60101940A/ja
Publication of JPS60101940A publication Critical patent/JPS60101940A/ja
Publication of JPH0471342B2 publication Critical patent/JPH0471342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/283—Reinforcing structures, e.g. bump collars

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)
JP58208891A 1983-11-07 1983-11-07 イメ−ジセンサ Granted JPS60101940A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58208891A JPS60101940A (ja) 1983-11-07 1983-11-07 イメ−ジセンサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58208891A JPS60101940A (ja) 1983-11-07 1983-11-07 イメ−ジセンサ

Publications (2)

Publication Number Publication Date
JPS60101940A true JPS60101940A (ja) 1985-06-06
JPH0471342B2 JPH0471342B2 (enExample) 1992-11-13

Family

ID=16563833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58208891A Granted JPS60101940A (ja) 1983-11-07 1983-11-07 イメ−ジセンサ

Country Status (1)

Country Link
JP (1) JPS60101940A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150181A (en) * 1990-03-27 1992-09-22 Canon Kabushiki Kaisha Amorphous thin film semiconductor device with active and inactive layers
US5576555A (en) * 1990-03-27 1996-11-19 Canon Kabushiki Kaisha Thin film semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772370A (en) * 1980-10-23 1982-05-06 Canon Inc Photoelectric converter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772370A (en) * 1980-10-23 1982-05-06 Canon Inc Photoelectric converter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150181A (en) * 1990-03-27 1992-09-22 Canon Kabushiki Kaisha Amorphous thin film semiconductor device with active and inactive layers
US5576555A (en) * 1990-03-27 1996-11-19 Canon Kabushiki Kaisha Thin film semiconductor device
US5705411A (en) * 1990-03-27 1998-01-06 Canon Kabushiki Kaisha Reactive ion etching to physically etch thin film semiconductor

Also Published As

Publication number Publication date
JPH0471342B2 (enExample) 1992-11-13

Similar Documents

Publication Publication Date Title
JPS59143362A (ja) パツシベ−シヨン膜
JPS60101940A (ja) イメ−ジセンサ
JPS60239072A (ja) 光センサ
JPH08128889A (ja) 赤外線センサ
US4943839A (en) Contact type image sensor
JP3373919B2 (ja) リソグラフィー用マスクブランク及びリソグラフィー用マスク
JPH0715144Y2 (ja) コプラナ−型光センサ−
JPS61216360A (ja) 密着型イメ−ジセンサ
JP2999541B2 (ja) 光電変換素子、光センサおよびその製法
JPH07263741A (ja) 薄膜フォトトランジスタ
JP2501107B2 (ja) 光電変換装置
JP3407917B2 (ja) 光センサ
JPS59229860A (ja) 光電変換素子およびその製造方法
JPS61203666A (ja) フオトダイオ−ドの製造方法
JPS601873A (ja) 光電変換素子およびその製造方法
JPH01265574A (ja) 光電変換素子
JPS616877A (ja) フオトトランジスタ
JPS60147174A (ja) フォトセンサ
JPS6167264A (ja) 光電変換素子およびその製造方法
JPS60242669A (ja) 光センサアレイ装置
JPH109959A (ja) 温度検出装置
JPS59204284A (ja) 光センサの製造方法
JPS59181584A (ja) 光センサの製造方法
JPS58199561A (ja) 薄膜受光素子
JPH05232048A (ja) 圧電結晶の格子定数測定法