JPS5997514A - 太陽電池の製造法 - Google Patents
太陽電池の製造法Info
- Publication number
- JPS5997514A JPS5997514A JP57204923A JP20492382A JPS5997514A JP S5997514 A JPS5997514 A JP S5997514A JP 57204923 A JP57204923 A JP 57204923A JP 20492382 A JP20492382 A JP 20492382A JP S5997514 A JPS5997514 A JP S5997514A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- voltage
- optical energy
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 description 17
- 239000007789 gas Substances 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57204923A JPS5997514A (ja) | 1982-11-22 | 1982-11-22 | 太陽電池の製造法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57204923A JPS5997514A (ja) | 1982-11-22 | 1982-11-22 | 太陽電池の製造法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5997514A true JPS5997514A (ja) | 1984-06-05 |
JPH0445991B2 JPH0445991B2 (enrdf_load_stackoverflow) | 1992-07-28 |
Family
ID=16498601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57204923A Granted JPS5997514A (ja) | 1982-11-22 | 1982-11-22 | 太陽電池の製造法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5997514A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6113673A (ja) * | 1984-06-25 | 1986-01-21 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | 光起電力デバイス |
JPH0195770U (enrdf_load_stackoverflow) * | 1987-12-17 | 1989-06-26 | ||
JPH02122575A (ja) * | 1988-10-31 | 1990-05-10 | Kyocera Corp | 光電変換装置 |
US7534628B2 (en) | 2006-10-12 | 2009-05-19 | Canon Kabushiki Kaisha | Method for forming semiconductor device and method for forming photovoltaic device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56130466A (en) * | 1980-03-17 | 1981-10-13 | Canon Inc | Film forming method |
JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
JPS5855328U (ja) * | 1981-10-09 | 1983-04-14 | 三洋電機株式会社 | 切換装置 |
JPS58144470A (ja) * | 1981-12-16 | 1983-08-27 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | 光応答性無定形合金の化学相沈着製造方法 |
JPS5913617A (ja) * | 1982-07-16 | 1984-01-24 | Agency Of Ind Science & Technol | 微結晶シリコンを含むシリコン薄膜の製造法 |
-
1982
- 1982-11-22 JP JP57204923A patent/JPS5997514A/ja active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
JPS56130466A (en) * | 1980-03-17 | 1981-10-13 | Canon Inc | Film forming method |
JPS5855328U (ja) * | 1981-10-09 | 1983-04-14 | 三洋電機株式会社 | 切換装置 |
JPS58144470A (ja) * | 1981-12-16 | 1983-08-27 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | 光応答性無定形合金の化学相沈着製造方法 |
JPS5913617A (ja) * | 1982-07-16 | 1984-01-24 | Agency Of Ind Science & Technol | 微結晶シリコンを含むシリコン薄膜の製造法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6113673A (ja) * | 1984-06-25 | 1986-01-21 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | 光起電力デバイス |
JPH0195770U (enrdf_load_stackoverflow) * | 1987-12-17 | 1989-06-26 | ||
JPH02122575A (ja) * | 1988-10-31 | 1990-05-10 | Kyocera Corp | 光電変換装置 |
US7534628B2 (en) | 2006-10-12 | 2009-05-19 | Canon Kabushiki Kaisha | Method for forming semiconductor device and method for forming photovoltaic device |
Also Published As
Publication number | Publication date |
---|---|
JPH0445991B2 (enrdf_load_stackoverflow) | 1992-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108321239A (zh) | 一种太阳能异质结电池及其制备方法 | |
JPS6233479A (ja) | 太陽電池 | |
JPS5846074B2 (ja) | 光起電力装置の製造方法 | |
JPH0595126A (ja) | 薄膜太陽電池およびその製造方法 | |
JPS5997514A (ja) | 太陽電池の製造法 | |
JP2680579B2 (ja) | 光起電力装置 | |
CN117525196A (zh) | 硅基异质结太阳能电池、制备方法、用电设备及应用 | |
JPH0346377A (ja) | 太陽電池 | |
JPS6074685A (ja) | 光起電力装置 | |
JP2775460B2 (ja) | 非晶質太陽電池の製造方法 | |
JPH0364973A (ja) | 光起電力素子 | |
JPS62159475A (ja) | アモルフアスSi太陽電池 | |
JPS62106670A (ja) | 半導体素子 | |
JPS6152992B2 (enrdf_load_stackoverflow) | ||
JPS6095977A (ja) | 光起電力装置 | |
JPS62165374A (ja) | アモルフアス光起電力素子 | |
JPS632385A (ja) | 多層構造p型シリコン膜および太陽電池 | |
JPS61224368A (ja) | 半導体装置 | |
JPH01211980A (ja) | 太陽電池 | |
JPH03218683A (ja) | 光起電力素子 | |
JP2883231B2 (ja) | 積層型光起電力装置の製造方法 | |
JPH0216776A (ja) | 太陽電池の製造方法 | |
JPS6115598B2 (enrdf_load_stackoverflow) | ||
JPS6135569A (ja) | 光起電力装置 | |
JPH0376166A (ja) | 光電変換素子 |