JPS5994032A - 投影露光装置 - Google Patents
投影露光装置Info
- Publication number
- JPS5994032A JPS5994032A JP57204856A JP20485682A JPS5994032A JP S5994032 A JPS5994032 A JP S5994032A JP 57204856 A JP57204856 A JP 57204856A JP 20485682 A JP20485682 A JP 20485682A JP S5994032 A JPS5994032 A JP S5994032A
- Authority
- JP
- Japan
- Prior art keywords
- projection
- image
- reticle
- mark
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 44
- 238000005286 illumination Methods 0.000 claims abstract description 5
- 238000001514 detection method Methods 0.000 claims description 13
- 238000005259 measurement Methods 0.000 claims description 11
- 238000003384 imaging method Methods 0.000 claims description 7
- 230000004907 flux Effects 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 11
- 229910052804 chromium Inorganic materials 0.000 description 11
- 239000011651 chromium Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000004075 alteration Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- 235000008375 Decussocarpus nagi Nutrition 0.000 description 1
- 244000309456 Decussocarpus nagi Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57204856A JPS5994032A (ja) | 1982-11-22 | 1982-11-22 | 投影露光装置 |
US06/800,094 US4629313A (en) | 1982-10-22 | 1985-11-20 | Exposure apparatus |
US06/897,644 US4711567A (en) | 1982-10-22 | 1986-08-18 | Exposure apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57204856A JPS5994032A (ja) | 1982-11-22 | 1982-11-22 | 投影露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5994032A true JPS5994032A (ja) | 1984-05-30 |
JPH0340934B2 JPH0340934B2 (enrdf_load_stackoverflow) | 1991-06-20 |
Family
ID=16497526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57204856A Granted JPS5994032A (ja) | 1982-10-22 | 1982-11-22 | 投影露光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5994032A (enrdf_load_stackoverflow) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60262421A (ja) * | 1984-06-11 | 1985-12-25 | Hitachi Ltd | 投影露光方法およびその装置 |
JPS6153615A (ja) * | 1984-08-24 | 1986-03-17 | Canon Inc | 面位置検出方法 |
US4585342A (en) * | 1984-06-29 | 1986-04-29 | International Business Machines Corporation | System for real-time monitoring the characteristics, variations and alignment errors of lithography structures |
JPS6358349A (ja) * | 1986-08-29 | 1988-03-14 | Nikon Corp | 投影光学装置 |
JPS63164212A (ja) * | 1986-12-26 | 1988-07-07 | Hitachi Ltd | 縮小投影露光装置 |
JPH01149424A (ja) * | 1987-12-04 | 1989-06-12 | Fujitsu Ltd | 投影露光の焦点合わせ補正方法 |
JPH07183210A (ja) * | 1994-07-13 | 1995-07-21 | Hitachi Ltd | 投影露光装置 |
JPH0982628A (ja) * | 1995-09-12 | 1997-03-28 | Canon Inc | 露光方法及び該方法を用いた露光装置 |
US6525817B1 (en) | 1995-02-21 | 2003-02-25 | Nikon Corporation | Inspection method and apparatus for projection optical systems |
JP2005316409A (ja) * | 2004-03-29 | 2005-11-10 | Fuji Photo Film Co Ltd | 露光装置 |
JP2007535170A (ja) * | 2004-04-28 | 2007-11-29 | ライテル・インストルメンツ | 動的走査フィールド湾曲の判定用装置及び方法 |
JP2008135745A (ja) * | 2007-11-22 | 2008-06-12 | Nikon Corp | 波面収差測定機及び投影露光装置 |
JP2008538866A (ja) * | 2005-04-25 | 2008-11-06 | マイクロニック レーザー システムズ アクチボラゲット | マイクロ・リソグラフィ・デフレクタ・システムの中でのマークの位置を測定するための方法 |
JP2017037194A (ja) * | 2015-08-10 | 2017-02-16 | キヤノン株式会社 | 露光装置の制御方法、露光装置、プログラム、および物品の製造方法 |
JP2019056830A (ja) * | 2017-09-21 | 2019-04-11 | キヤノン株式会社 | 決定方法、露光方法、プログラム、露光装置、および物品の製造方法 |
-
1982
- 1982-11-22 JP JP57204856A patent/JPS5994032A/ja active Granted
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60262421A (ja) * | 1984-06-11 | 1985-12-25 | Hitachi Ltd | 投影露光方法およびその装置 |
US4585342A (en) * | 1984-06-29 | 1986-04-29 | International Business Machines Corporation | System for real-time monitoring the characteristics, variations and alignment errors of lithography structures |
JPS6153615A (ja) * | 1984-08-24 | 1986-03-17 | Canon Inc | 面位置検出方法 |
JPS6358349A (ja) * | 1986-08-29 | 1988-03-14 | Nikon Corp | 投影光学装置 |
JPS63164212A (ja) * | 1986-12-26 | 1988-07-07 | Hitachi Ltd | 縮小投影露光装置 |
JPH01149424A (ja) * | 1987-12-04 | 1989-06-12 | Fujitsu Ltd | 投影露光の焦点合わせ補正方法 |
JPH07183210A (ja) * | 1994-07-13 | 1995-07-21 | Hitachi Ltd | 投影露光装置 |
US6525817B1 (en) | 1995-02-21 | 2003-02-25 | Nikon Corporation | Inspection method and apparatus for projection optical systems |
US6850327B2 (en) | 1995-02-21 | 2005-02-01 | Nikon Corporation | Inspection method and apparatus for projection optical systems |
JPH0982628A (ja) * | 1995-09-12 | 1997-03-28 | Canon Inc | 露光方法及び該方法を用いた露光装置 |
JP2005316409A (ja) * | 2004-03-29 | 2005-11-10 | Fuji Photo Film Co Ltd | 露光装置 |
JP2007535170A (ja) * | 2004-04-28 | 2007-11-29 | ライテル・インストルメンツ | 動的走査フィールド湾曲の判定用装置及び方法 |
JP2008538866A (ja) * | 2005-04-25 | 2008-11-06 | マイクロニック レーザー システムズ アクチボラゲット | マイクロ・リソグラフィ・デフレクタ・システムの中でのマークの位置を測定するための方法 |
JP2008135745A (ja) * | 2007-11-22 | 2008-06-12 | Nikon Corp | 波面収差測定機及び投影露光装置 |
JP2017037194A (ja) * | 2015-08-10 | 2017-02-16 | キヤノン株式会社 | 露光装置の制御方法、露光装置、プログラム、および物品の製造方法 |
JP2019056830A (ja) * | 2017-09-21 | 2019-04-11 | キヤノン株式会社 | 決定方法、露光方法、プログラム、露光装置、および物品の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0340934B2 (enrdf_load_stackoverflow) | 1991-06-20 |
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