JPS5990966A - 光電変換素子 - Google Patents

光電変換素子

Info

Publication number
JPS5990966A
JPS5990966A JP57201482A JP20148282A JPS5990966A JP S5990966 A JPS5990966 A JP S5990966A JP 57201482 A JP57201482 A JP 57201482A JP 20148282 A JP20148282 A JP 20148282A JP S5990966 A JPS5990966 A JP S5990966A
Authority
JP
Japan
Prior art keywords
shaped electrode
comb
band
electrode
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57201482A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6260820B2 (enExample
Inventor
Masaharu Ono
大野　雅晴
Masatoshi Kitagawa
雅俊 北川
Shinichiro Ishihara
伸一郎 石原
Takashi Hirao
孝 平尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57201482A priority Critical patent/JPS5990966A/ja
Publication of JPS5990966A publication Critical patent/JPS5990966A/ja
Publication of JPS6260820B2 publication Critical patent/JPS6260820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes

Landscapes

  • Light Receiving Elements (AREA)
JP57201482A 1982-11-16 1982-11-16 光電変換素子 Granted JPS5990966A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57201482A JPS5990966A (ja) 1982-11-16 1982-11-16 光電変換素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57201482A JPS5990966A (ja) 1982-11-16 1982-11-16 光電変換素子

Publications (2)

Publication Number Publication Date
JPS5990966A true JPS5990966A (ja) 1984-05-25
JPS6260820B2 JPS6260820B2 (enExample) 1987-12-18

Family

ID=16441793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57201482A Granted JPS5990966A (ja) 1982-11-16 1982-11-16 光電変換素子

Country Status (1)

Country Link
JP (1) JPS5990966A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858453B2 (en) 2003-02-06 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device and display device utilizing solution ejector
US8053174B2 (en) 2003-02-05 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for wiring

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053174B2 (en) 2003-02-05 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for wiring
US8460857B2 (en) 2003-02-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for wiring
US7858453B2 (en) 2003-02-06 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device and display device utilizing solution ejector
US8569119B2 (en) 2003-02-06 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device and display device

Also Published As

Publication number Publication date
JPS6260820B2 (enExample) 1987-12-18

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