JPS6260820B2 - - Google Patents
Info
- Publication number
- JPS6260820B2 JPS6260820B2 JP57201482A JP20148282A JPS6260820B2 JP S6260820 B2 JPS6260820 B2 JP S6260820B2 JP 57201482 A JP57201482 A JP 57201482A JP 20148282 A JP20148282 A JP 20148282A JP S6260820 B2 JPS6260820 B2 JP S6260820B2
- Authority
- JP
- Japan
- Prior art keywords
- comb
- electrode
- transparent
- shaped electrodes
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201482A JPS5990966A (ja) | 1982-11-16 | 1982-11-16 | 光電変換素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201482A JPS5990966A (ja) | 1982-11-16 | 1982-11-16 | 光電変換素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5990966A JPS5990966A (ja) | 1984-05-25 |
| JPS6260820B2 true JPS6260820B2 (enExample) | 1987-12-18 |
Family
ID=16441793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57201482A Granted JPS5990966A (ja) | 1982-11-16 | 1982-11-16 | 光電変換素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5990966A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110038165A (ko) | 2003-02-05 | 2011-04-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 레지스트 패턴의 형성방법 및 반도체장치의 제조방법 |
| WO2004070822A1 (ja) | 2003-02-06 | 2004-08-19 | Semiconductor Energy Laboratory Co., Ltd. | 半導体装置及び表示装置の製造方法 |
-
1982
- 1982-11-16 JP JP57201482A patent/JPS5990966A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5990966A (ja) | 1984-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4281208A (en) | Photovoltaic device and method of manufacturing thereof | |
| EP0276002B1 (en) | Thin film transistor | |
| JPH0510834B2 (enExample) | ||
| US5130775A (en) | Amorphous photo-detecting element with spatial filter | |
| US5015838A (en) | Color sensor having laminated semiconductor layers | |
| JPH0673372B2 (ja) | 光読み取り装置及びその製造方法 | |
| US4804833A (en) | Color sensing method and device therefor | |
| US4698658A (en) | Amorphous semiconductor device | |
| JPS61159771A (ja) | 光起電力装置 | |
| JPS5990966A (ja) | 光電変換素子 | |
| US4101924A (en) | Semiconductor radiation detector | |
| JP2566910B2 (ja) | 平面センサ− | |
| US4570030A (en) | Solar cell device | |
| JPS60258975A (ja) | 光起電力装置 | |
| JPS6260819B2 (enExample) | ||
| JPS6035554A (ja) | 薄膜太陽電池 | |
| US3522435A (en) | Photodiode assembly for optical encoder | |
| JP2889963B2 (ja) | 密着型イメージセンサ | |
| JP3469061B2 (ja) | 太陽電池 | |
| JP2628034B2 (ja) | アモルファスシリコンpinダイオードの製造法 | |
| JP2661689B2 (ja) | 光センサ | |
| JPH03234066A (ja) | 光起電力装置 | |
| JPS61284957A (ja) | イメ−ジセンサ | |
| JP3450880B2 (ja) | カメラ用フォトダイオード | |
| JPH021866Y2 (enExample) |