JPS5988887A - 半導体発光素子およびその製造方法 - Google Patents

半導体発光素子およびその製造方法

Info

Publication number
JPS5988887A
JPS5988887A JP57198556A JP19855682A JPS5988887A JP S5988887 A JPS5988887 A JP S5988887A JP 57198556 A JP57198556 A JP 57198556A JP 19855682 A JP19855682 A JP 19855682A JP S5988887 A JPS5988887 A JP S5988887A
Authority
JP
Japan
Prior art keywords
layer
type
region
semiconductor substrate
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57198556A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04399B2 (enExample
Inventor
Tomoki Murakami
村上　智樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57198556A priority Critical patent/JPS5988887A/ja
Publication of JPS5988887A publication Critical patent/JPS5988887A/ja
Publication of JPH04399B2 publication Critical patent/JPH04399B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP57198556A 1982-11-12 1982-11-12 半導体発光素子およびその製造方法 Granted JPS5988887A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57198556A JPS5988887A (ja) 1982-11-12 1982-11-12 半導体発光素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57198556A JPS5988887A (ja) 1982-11-12 1982-11-12 半導体発光素子およびその製造方法

Publications (2)

Publication Number Publication Date
JPS5988887A true JPS5988887A (ja) 1984-05-22
JPH04399B2 JPH04399B2 (enExample) 1992-01-07

Family

ID=16393140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57198556A Granted JPS5988887A (ja) 1982-11-12 1982-11-12 半導体発光素子およびその製造方法

Country Status (1)

Country Link
JP (1) JPS5988887A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175584A (ja) * 1984-09-20 1986-04-17 Nec Corp 半導体レ−ザ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6175584A (ja) * 1984-09-20 1986-04-17 Nec Corp 半導体レ−ザ

Also Published As

Publication number Publication date
JPH04399B2 (enExample) 1992-01-07

Similar Documents

Publication Publication Date Title
US3783351A (en) Semiconductor laser device and method for manufacturing the same
GB1342767A (en) Light emitting semiconductor devices
US5359209A (en) Efficient light emitting diodes with modified window layers
JP2765256B2 (ja) 発光ダイオード
JPH07176788A (ja) 発光ダイオード
JP2000261029A (ja) 光半導体素子
JPH0691280B2 (ja) 半導体発光ダイオード
JP3151096B2 (ja) 半導体発光素子
JPH04399B2 (enExample)
JPH07254731A (ja) 発光素子
JP2738040B2 (ja) 半導体発光装置
JPS63269593A (ja) 半導体レ−ザ装置とその製造方法
JP2948967B2 (ja) 半導体発光素子
JPS6086879A (ja) 半導体発光素子の製造方法
JP3236649B2 (ja) 半導体発光素子
JPH01212483A (ja) 半導体装置
JP3140123B2 (ja) 半導体発光素子
JPH0682886B2 (ja) 半導体レーザ装置の製造方法
JPS6248079A (ja) 半導体受光素子
JPS58207683A (ja) 半導体発光装置
JPH0210787A (ja) 半導体発光装置
JPH05299771A (ja) 半導体レーザダイオード
JPS54117692A (en) Semiconductor light emitting diode
JPS5856370A (ja) モノリシツク半導体発光素子及びその製造方法
JPH03203282A (ja) 半導体レーザダイオード