JPS5988887A - 半導体発光素子およびその製造方法 - Google Patents
半導体発光素子およびその製造方法Info
- Publication number
- JPS5988887A JPS5988887A JP57198556A JP19855682A JPS5988887A JP S5988887 A JPS5988887 A JP S5988887A JP 57198556 A JP57198556 A JP 57198556A JP 19855682 A JP19855682 A JP 19855682A JP S5988887 A JPS5988887 A JP S5988887A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- region
- semiconductor substrate
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 208000031481 Pathologic Constriction Diseases 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000005253 cladding Methods 0.000 description 13
- 238000000407 epitaxy Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 101150110330 CRAT gene Proteins 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57198556A JPS5988887A (ja) | 1982-11-12 | 1982-11-12 | 半導体発光素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57198556A JPS5988887A (ja) | 1982-11-12 | 1982-11-12 | 半導体発光素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5988887A true JPS5988887A (ja) | 1984-05-22 |
| JPH04399B2 JPH04399B2 (enrdf_load_html_response) | 1992-01-07 |
Family
ID=16393140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57198556A Granted JPS5988887A (ja) | 1982-11-12 | 1982-11-12 | 半導体発光素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5988887A (enrdf_load_html_response) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6175584A (ja) * | 1984-09-20 | 1986-04-17 | Nec Corp | 半導体レ−ザ |
-
1982
- 1982-11-12 JP JP57198556A patent/JPS5988887A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6175584A (ja) * | 1984-09-20 | 1986-04-17 | Nec Corp | 半導体レ−ザ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04399B2 (enrdf_load_html_response) | 1992-01-07 |
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