JPH04399B2 - - Google Patents
Info
- Publication number
- JPH04399B2 JPH04399B2 JP19855682A JP19855682A JPH04399B2 JP H04399 B2 JPH04399 B2 JP H04399B2 JP 19855682 A JP19855682 A JP 19855682A JP 19855682 A JP19855682 A JP 19855682A JP H04399 B2 JPH04399 B2 JP H04399B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- layer
- region
- epitaxial growth
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 30
- 238000009792 diffusion process Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000005253 cladding Methods 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57198556A JPS5988887A (ja) | 1982-11-12 | 1982-11-12 | 半導体発光素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57198556A JPS5988887A (ja) | 1982-11-12 | 1982-11-12 | 半導体発光素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5988887A JPS5988887A (ja) | 1984-05-22 |
| JPH04399B2 true JPH04399B2 (enrdf_load_html_response) | 1992-01-07 |
Family
ID=16393140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57198556A Granted JPS5988887A (ja) | 1982-11-12 | 1982-11-12 | 半導体発光素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5988887A (enrdf_load_html_response) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6175584A (ja) * | 1984-09-20 | 1986-04-17 | Nec Corp | 半導体レ−ザ |
-
1982
- 1982-11-12 JP JP57198556A patent/JPS5988887A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5988887A (ja) | 1984-05-22 |
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