JPS5984427A - パタ−ン形成方法 - Google Patents
パタ−ン形成方法Info
- Publication number
- JPS5984427A JPS5984427A JP19411182A JP19411182A JPS5984427A JP S5984427 A JPS5984427 A JP S5984427A JP 19411182 A JP19411182 A JP 19411182A JP 19411182 A JP19411182 A JP 19411182A JP S5984427 A JPS5984427 A JP S5984427A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- radiation
- layer
- pattern
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 32
- 238000000059 patterning Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 230000005855 radiation Effects 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 150000002366 halogen compounds Chemical class 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 32
- 238000012545 processing Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003079 width control Methods 0.000 description 2
- 101100536577 Caenorhabditis elegans cct-4 gene Proteins 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 208000032825 Ring chromosome 2 syndrome Diseases 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- QPAXMPYBNSHKAK-UHFFFAOYSA-N chloro(difluoro)methane Chemical compound F[C](F)Cl QPAXMPYBNSHKAK-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19411182A JPS5984427A (ja) | 1982-11-04 | 1982-11-04 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19411182A JPS5984427A (ja) | 1982-11-04 | 1982-11-04 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5984427A true JPS5984427A (ja) | 1984-05-16 |
| JPH03765B2 JPH03765B2 (en, 2012) | 1991-01-08 |
Family
ID=16319099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19411182A Granted JPS5984427A (ja) | 1982-11-04 | 1982-11-04 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5984427A (en, 2012) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6266630A (ja) * | 1985-09-19 | 1987-03-26 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| GB2442030A (en) * | 2006-09-19 | 2008-03-26 | Innos Ltd | Resist exposure and patterning process |
-
1982
- 1982-11-04 JP JP19411182A patent/JPS5984427A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6266630A (ja) * | 1985-09-19 | 1987-03-26 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| GB2442030A (en) * | 2006-09-19 | 2008-03-26 | Innos Ltd | Resist exposure and patterning process |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03765B2 (en, 2012) | 1991-01-08 |
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