JPH05848B2 - - Google Patents
Info
- Publication number
- JPH05848B2 JPH05848B2 JP58031118A JP3111883A JPH05848B2 JP H05848 B2 JPH05848 B2 JP H05848B2 JP 58031118 A JP58031118 A JP 58031118A JP 3111883 A JP3111883 A JP 3111883A JP H05848 B2 JPH05848 B2 JP H05848B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- radiation
- film
- sensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 30
- 230000005855 radiation Effects 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 21
- 229920005989 resin Polymers 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 24
- 230000018109 developmental process Effects 0.000 description 11
- 238000000576 coating method Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003079 width control Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001687 destabilization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 208000007578 phototoxic dermatitis Diseases 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58031118A JPS59155927A (ja) | 1983-02-25 | 1983-02-25 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58031118A JPS59155927A (ja) | 1983-02-25 | 1983-02-25 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59155927A JPS59155927A (ja) | 1984-09-05 |
| JPH05848B2 true JPH05848B2 (en, 2012) | 1993-01-06 |
Family
ID=12322486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58031118A Granted JPS59155927A (ja) | 1983-02-25 | 1983-02-25 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59155927A (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61285716A (ja) * | 1985-06-12 | 1986-12-16 | Hitachi Ltd | レジスト塗布方法 |
-
1983
- 1983-02-25 JP JP58031118A patent/JPS59155927A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59155927A (ja) | 1984-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5989788A (en) | Method for forming resist patterns having two photoresist layers and an intermediate layer | |
| KR100231937B1 (ko) | 멀티레벨 레티클 시스템 및 멀티레벨 포토레지스트 프로파일 형성 방법 | |
| JPH07211631A (ja) | 多層レジストパターン形成方法 | |
| JPS6323657B2 (en, 2012) | ||
| KR100675782B1 (ko) | 비 흡수 레티클 및 이를 제조하는 방법 | |
| JP3373147B2 (ja) | フォトレジスト膜及びそのパターン形成方法 | |
| EP0399837B1 (en) | Method of optimizing photoresist contrast | |
| JPH0219970B2 (en, 2012) | ||
| JPH035653B2 (en, 2012) | ||
| JPH05848B2 (en, 2012) | ||
| US5543255A (en) | Half-tone type phase shift mask and method for fabrication thereof | |
| JP2560773B2 (ja) | パターン形成方法 | |
| JPH05234965A (ja) | コンタクトホールの形成方法 | |
| JPH03765B2 (en, 2012) | ||
| JPH035654B2 (en, 2012) | ||
| JPS59155926A (ja) | パタ−ン形成方法 | |
| JPH04239116A (ja) | 半導体装置の製造方法 | |
| JPH0574701A (ja) | レジストパターン形成方法 | |
| KR100393202B1 (ko) | 패턴형성에사용되는마스크및그제조방법 | |
| JPH0419697B2 (en, 2012) | ||
| JPH0425695B2 (en, 2012) | ||
| JPH0312452B2 (en, 2012) | ||
| JPS59168637A (ja) | 微細パタ−ンの形成方法 | |
| JP2666420B2 (ja) | 半導体装置の製造方法 | |
| JPS58153932A (ja) | 写真蝕刻方法 |