JPH035654B2 - - Google Patents

Info

Publication number
JPH035654B2
JPH035654B2 JP19411282A JP19411282A JPH035654B2 JP H035654 B2 JPH035654 B2 JP H035654B2 JP 19411282 A JP19411282 A JP 19411282A JP 19411282 A JP19411282 A JP 19411282A JP H035654 B2 JPH035654 B2 JP H035654B2
Authority
JP
Japan
Prior art keywords
resist
radiation
pattern
layer
sensitive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19411282A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5984428A (ja
Inventor
Masaru Sasako
Kazuhiko Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP19411282A priority Critical patent/JPS5984428A/ja
Publication of JPS5984428A publication Critical patent/JPS5984428A/ja
Publication of JPH035654B2 publication Critical patent/JPH035654B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP19411282A 1982-11-04 1982-11-04 パタ−ン形成方法 Granted JPS5984428A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19411282A JPS5984428A (ja) 1982-11-04 1982-11-04 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19411282A JPS5984428A (ja) 1982-11-04 1982-11-04 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS5984428A JPS5984428A (ja) 1984-05-16
JPH035654B2 true JPH035654B2 (en, 2012) 1991-01-28

Family

ID=16319115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19411282A Granted JPS5984428A (ja) 1982-11-04 1982-11-04 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS5984428A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005021459B3 (de) * 2005-05-10 2006-07-13 Eads Space Transportation Gmbh Mechanischer Rotationsantrieb

Also Published As

Publication number Publication date
JPS5984428A (ja) 1984-05-16

Similar Documents

Publication Publication Date Title
KR0170253B1 (ko) 실리레이션을 이용한 사진식각방법
US20080009138A1 (en) Method for forming pattern of a semiconductor device
JPS6323657B2 (en, 2012)
JPH07211631A (ja) 多層レジストパターン形成方法
JP2829555B2 (ja) 微細レジストパターンの形成方法
JP3373147B2 (ja) フォトレジスト膜及びそのパターン形成方法
KR101096194B1 (ko) 반도체 소자의 패턴 형성 방법
JP2532589B2 (ja) 微細パタ―ン形成方法
JP2001358061A (ja) 半導体装置の製造方法
JPH0219970B2 (en, 2012)
JPH035653B2 (en, 2012)
JPS6239817B2 (en, 2012)
JPH035654B2 (en, 2012)
JPH03765B2 (en, 2012)
JPH04239116A (ja) 半導体装置の製造方法
JPS59155926A (ja) パタ−ン形成方法
JPH05848B2 (en, 2012)
CN112946995B (zh) 掩膜版以及半导体结构的形成方法
JP3421268B2 (ja) パターン形成法
US6762001B2 (en) Method of fabricating an exposure mask for semiconductor manufacture
JPH02156244A (ja) パターン形成方法
JP2712407B2 (ja) ２層フォトレジストを用いた微細パターンの形成方法
JP3017776B2 (ja) パターン形成方法
JPH0513325A (ja) パターン形成方法
JPS58153932A (ja) 写真蝕刻方法