JPS598353A - 半導体集積回路装置 - Google Patents
半導体集積回路装置Info
- Publication number
- JPS598353A JPS598353A JP11796982A JP11796982A JPS598353A JP S598353 A JPS598353 A JP S598353A JP 11796982 A JP11796982 A JP 11796982A JP 11796982 A JP11796982 A JP 11796982A JP S598353 A JPS598353 A JP S598353A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- impurity layer
- conductivity type
- oxide film
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000012535 impurity Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000012212 insulator Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000005468 ion implantation Methods 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 241000026407 Haya Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009960 carding Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 210000004894 snout Anatomy 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11796982A JPS598353A (ja) | 1982-07-07 | 1982-07-07 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11796982A JPS598353A (ja) | 1982-07-07 | 1982-07-07 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS598353A true JPS598353A (ja) | 1984-01-17 |
| JPH0358180B2 JPH0358180B2 (enrdf_load_stackoverflow) | 1991-09-04 |
Family
ID=14724753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11796982A Granted JPS598353A (ja) | 1982-07-07 | 1982-07-07 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS598353A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1143505A3 (en) * | 1989-07-28 | 2001-11-07 | AT&T Corp. | Planar isolation technique for integrated circuits |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226182A (en) * | 1975-08-25 | 1977-02-26 | Hitachi Ltd | Manufacturing method of semi-conductor unit |
-
1982
- 1982-07-07 JP JP11796982A patent/JPS598353A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226182A (en) * | 1975-08-25 | 1977-02-26 | Hitachi Ltd | Manufacturing method of semi-conductor unit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1143505A3 (en) * | 1989-07-28 | 2001-11-07 | AT&T Corp. | Planar isolation technique for integrated circuits |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0358180B2 (enrdf_load_stackoverflow) | 1991-09-04 |
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