JPS5976427A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS5976427A
JPS5976427A JP18117982A JP18117982A JPS5976427A JP S5976427 A JPS5976427 A JP S5976427A JP 18117982 A JP18117982 A JP 18117982A JP 18117982 A JP18117982 A JP 18117982A JP S5976427 A JPS5976427 A JP S5976427A
Authority
JP
Japan
Prior art keywords
substrate
plasma processing
plasma
processing apparatus
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18117982A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0416937B2 (enExample
Inventor
Shuzo Fujimura
藤村　修三
Hiroshi Yano
弘 矢野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18117982A priority Critical patent/JPS5976427A/ja
Publication of JPS5976427A publication Critical patent/JPS5976427A/ja
Publication of JPH0416937B2 publication Critical patent/JPH0416937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP18117982A 1982-10-14 1982-10-14 プラズマ処理装置 Granted JPS5976427A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18117982A JPS5976427A (ja) 1982-10-14 1982-10-14 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18117982A JPS5976427A (ja) 1982-10-14 1982-10-14 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS5976427A true JPS5976427A (ja) 1984-05-01
JPH0416937B2 JPH0416937B2 (enExample) 1992-03-25

Family

ID=16096252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18117982A Granted JPS5976427A (ja) 1982-10-14 1982-10-14 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS5976427A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01319935A (ja) * 1988-06-21 1989-12-26 Matsushita Electric Ind Co Ltd 焦電材料のドライエッチング装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135934A (en) * 1980-03-27 1981-10-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Dry etching device
JPS5770278A (en) * 1980-10-22 1982-04-30 Nec Kyushu Ltd Plasma etching apparatus
JPS57143827A (en) * 1981-03-02 1982-09-06 Tokyo Ohka Kogyo Co Ltd Parallel, flat electrode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135934A (en) * 1980-03-27 1981-10-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Dry etching device
JPS5770278A (en) * 1980-10-22 1982-04-30 Nec Kyushu Ltd Plasma etching apparatus
JPS57143827A (en) * 1981-03-02 1982-09-06 Tokyo Ohka Kogyo Co Ltd Parallel, flat electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01319935A (ja) * 1988-06-21 1989-12-26 Matsushita Electric Ind Co Ltd 焦電材料のドライエッチング装置

Also Published As

Publication number Publication date
JPH0416937B2 (enExample) 1992-03-25

Similar Documents

Publication Publication Date Title
US5415728A (en) Method of performing plain etching treatment and apparatus therefor
US6437512B1 (en) Plasma generator
US4442338A (en) Plasma etching apparatus
JPS62208636A (ja) レジスト剥離方法
JP2000228398A5 (ja) 処理装置、これを用いる半導体装置の製造方法、半導体製造装置の構成部品ならびにフォーカスリング
JPH09129607A (ja) マイクロ波プラズマエッチング装置及び方法
JP3520577B2 (ja) プラズマ処理装置
KR100262883B1 (ko) 플라즈마 크리닝 방법 및 플라즈마 처리장치
JPS5976427A (ja) プラズマ処理装置
JP3362093B2 (ja) エッチングダメージの除去方法
JP3180438B2 (ja) プラズマ処理装置被処理基板固定方法
US20010049196A1 (en) Apparatus for improving etch uniformity and methods therefor
JP3164188B2 (ja) プラズマ処理装置
JPH05144779A (ja) シリコン酸化膜のドライエツチング方法
JPS6015931A (ja) 反応性イオンエツチング方法
JPH05315292A (ja) 半導体製造装置及び半導体装置の製造方法
JPH0241167B2 (enExample)
JPS59172237A (ja) プラズマ処理装置
JPH01140723A (ja) マイクロ波によるプラズマ処理装置
JPH06120140A (ja) 半導体製造方法および装置
JPH10298759A (ja) 成膜方法及び成膜装置
JPH05347282A (ja) アッシング装置及びその処理方法
JPH04318175A (ja) バイアスｅｃｒプラズマｃｖｄ装置
JPH0590229A (ja) プラズマ処理装置
JPS618925A (ja) エツチング方法