JPS5968896A - Ｅｐｒｏｍ装置 - Google Patents

Ｅｐｒｏｍ装置

Info

Publication number
JPS5968896A
JPS5968896A JP57177648A JP17764882A JPS5968896A JP S5968896 A JPS5968896 A JP S5968896A JP 57177648 A JP57177648 A JP 57177648A JP 17764882 A JP17764882 A JP 17764882A JP S5968896 A JPS5968896 A JP S5968896A
Authority
JP
Japan
Prior art keywords
data line
level
signal
turned
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57177648A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0232718B2 (enrdf_load_stackoverflow
Inventor
Akinori Matsuo
章則 松尾
Hideaki Takahashi
秀明 高橋
Kazuhiro Komori
小森　和宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP57177648A priority Critical patent/JPS5968896A/ja
Publication of JPS5968896A publication Critical patent/JPS5968896A/ja
Publication of JPH0232718B2 publication Critical patent/JPH0232718B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Read Only Memory (AREA)
JP57177648A 1982-10-12 1982-10-12 Ｅｐｒｏｍ装置 Granted JPS5968896A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57177648A JPS5968896A (ja) 1982-10-12 1982-10-12 Ｅｐｒｏｍ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57177648A JPS5968896A (ja) 1982-10-12 1982-10-12 Ｅｐｒｏｍ装置

Publications (2)

Publication Number Publication Date
JPS5968896A true JPS5968896A (ja) 1984-04-18
JPH0232718B2 JPH0232718B2 (enrdf_load_stackoverflow) 1990-07-23

Family

ID=16034662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57177648A Granted JPS5968896A (ja) 1982-10-12 1982-10-12 Ｅｐｒｏｍ装置

Country Status (1)

Country Link
JP (1) JPS5968896A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61292293A (ja) * 1985-04-11 1986-12-23 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド 高速ｃｍｏｓ電流センス増幅器
JPH02285593A (ja) * 1989-04-26 1990-11-22 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2011222090A (ja) * 2010-04-09 2011-11-04 Toshiba Corp 不揮発性半導体記憶装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH055015U (ja) * 1991-07-08 1993-01-26 日本パフ株式会社 化粧用スポンジパフ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61292293A (ja) * 1985-04-11 1986-12-23 アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド 高速ｃｍｏｓ電流センス増幅器
JPH02285593A (ja) * 1989-04-26 1990-11-22 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2011222090A (ja) * 2010-04-09 2011-11-04 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
JPH0232718B2 (enrdf_load_stackoverflow) 1990-07-23

Similar Documents

Publication Publication Date Title
KR100211482B1 (ko) 감소 칩 영역을 가진 반도체 메모리 소자
TWI715871B (zh) 改良式快閃記憶體單元與相關解碼器
KR950009877B1 (ko) 복수의 셀블록으로 분할된 셀어레이를 구비한 반도체 기억장치
JP3373632B2 (ja) 不揮発性半導体記憶装置
EP0426282B1 (en) Programmable logic device
US4996671A (en) Semiconductor memory device
US4933906A (en) Non-volatile semiconductor memory device
KR100423894B1 (ko) 저전압 반도체 메모리 장치
US4926387A (en) Memory timing circuit employing scaled-down models of bit lines using reduced number of memory cells
JP2002251896A (ja) プログラミング用のビットラインセットアップ及びディスチャージ回路を有する不揮発性メモリ装置及びそのプログラミング方法
JP2002197876A (ja) 不揮発性記憶装置の書込み方法
JPH0565960B2 (enrdf_load_stackoverflow)
JP2795074B2 (ja) ダイナミックｒａｍ
JPS63271798A (ja) 消去可能なプログラマブル論理装置
JPS5968896A (ja) Ｅｐｒｏｍ装置
US6466508B1 (en) Semiconductor memory device having high-speed read function
JP4012151B2 (ja) 不揮発性半導体記憶装置
JPS60173793A (ja) 半導体記憶装置
JP2891552B2 (ja) 不揮発性半導体記憶装置
JP4163473B2 (ja) 不揮発性半導体記憶装置
JPH0273596A (ja) 集積回路
JP3098498B2 (ja) ブロックライト機能を有する半導体記憶装置とその書込み制御方法
JP3892790B2 (ja) 半導体不揮発性メモリ
KR930000817B1 (ko) 불휘발성 반도체기억장치
JP2596144B2 (ja) 不揮発性半導体記憶装置