JPS5961060A - 半導体集積回路 - Google Patents
半導体集積回路Info
- Publication number
- JPS5961060A JPS5961060A JP57172804A JP17280482A JPS5961060A JP S5961060 A JPS5961060 A JP S5961060A JP 57172804 A JP57172804 A JP 57172804A JP 17280482 A JP17280482 A JP 17280482A JP S5961060 A JPS5961060 A JP S5961060A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- layer
- type
- diffusion layer
- pnp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 description 10
- 230000008961 swelling Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57172804A JPS5961060A (ja) | 1982-09-29 | 1982-09-29 | 半導体集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57172804A JPS5961060A (ja) | 1982-09-29 | 1982-09-29 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5961060A true JPS5961060A (ja) | 1984-04-07 |
JPH0481342B2 JPH0481342B2 (enrdf_load_stackoverflow) | 1992-12-22 |
Family
ID=15948674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57172804A Granted JPS5961060A (ja) | 1982-09-29 | 1982-09-29 | 半導体集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5961060A (enrdf_load_stackoverflow) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54101289A (en) * | 1978-01-27 | 1979-08-09 | Hitachi Ltd | Semiconductor device |
-
1982
- 1982-09-29 JP JP57172804A patent/JPS5961060A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54101289A (en) * | 1978-01-27 | 1979-08-09 | Hitachi Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0481342B2 (enrdf_load_stackoverflow) | 1992-12-22 |
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