JPS5958911A - シュミット・トリガ−回路 - Google Patents
シュミット・トリガ−回路Info
- Publication number
- JPS5958911A JPS5958911A JP57170186A JP17018682A JPS5958911A JP S5958911 A JPS5958911 A JP S5958911A JP 57170186 A JP57170186 A JP 57170186A JP 17018682 A JP17018682 A JP 17018682A JP S5958911 A JPS5958911 A JP S5958911A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- inverter
- inverters
- power supply
- difference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000694 effects Effects 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57170186A JPS5958911A (ja) | 1982-09-28 | 1982-09-28 | シュミット・トリガ−回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57170186A JPS5958911A (ja) | 1982-09-28 | 1982-09-28 | シュミット・トリガ−回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5958911A true JPS5958911A (ja) | 1984-04-04 |
| JPH0412647B2 JPH0412647B2 (enExample) | 1992-03-05 |
Family
ID=15900274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57170186A Granted JPS5958911A (ja) | 1982-09-28 | 1982-09-28 | シュミット・トリガ−回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5958911A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6525569B1 (en) * | 2001-09-21 | 2003-02-25 | International Business Machines Corporation | Driver circuit having shapable transition waveforms |
-
1982
- 1982-09-28 JP JP57170186A patent/JPS5958911A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6525569B1 (en) * | 2001-09-21 | 2003-02-25 | International Business Machines Corporation | Driver circuit having shapable transition waveforms |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0412647B2 (enExample) | 1992-03-05 |
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