JPS595645A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS595645A
JPS595645A JP11471782A JP11471782A JPS595645A JP S595645 A JPS595645 A JP S595645A JP 11471782 A JP11471782 A JP 11471782A JP 11471782 A JP11471782 A JP 11471782A JP S595645 A JPS595645 A JP S595645A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
substrate
film
wall
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11471782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0423828B2 (zh
Inventor
Nobuo Sasaki
伸夫 佐々木
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11471782A priority Critical patent/JPS595645A/ja
Publication of JPS595645A publication Critical patent/JPS595645A/ja
Publication of JPH0423828B2 publication Critical patent/JPH0423828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP11471782A 1982-07-01 1982-07-01 半導体装置の製造方法 Granted JPS595645A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11471782A JPS595645A (ja) 1982-07-01 1982-07-01 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11471782A JPS595645A (ja) 1982-07-01 1982-07-01 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS595645A true JPS595645A (ja) 1984-01-12
JPH0423828B2 JPH0423828B2 (zh) 1992-04-23

Family

ID=14644852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11471782A Granted JPS595645A (ja) 1982-07-01 1982-07-01 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS595645A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987001239A1 (en) * 1985-08-15 1987-02-26 Ncr Corporation Dielectric isolation structure for integrated circuits
JPH01169940A (ja) * 1987-12-24 1989-07-05 Mitsubishi Electric Corp 素子分離構造およびその製造方法
US4886763A (en) * 1987-08-21 1989-12-12 Oki Electric Industry Co., Ltd. Device isolation by etching trench in dielectric on substrate and epitaxially filling the trench

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS5525499A (en) * 1978-08-10 1980-02-23 Eaton Corp Semiconductive polymer composition and electrical heating use thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS5525499A (en) * 1978-08-10 1980-02-23 Eaton Corp Semiconductive polymer composition and electrical heating use thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987001239A1 (en) * 1985-08-15 1987-02-26 Ncr Corporation Dielectric isolation structure for integrated circuits
US4886763A (en) * 1987-08-21 1989-12-12 Oki Electric Industry Co., Ltd. Device isolation by etching trench in dielectric on substrate and epitaxially filling the trench
JPH01169940A (ja) * 1987-12-24 1989-07-05 Mitsubishi Electric Corp 素子分離構造およびその製造方法

Also Published As

Publication number Publication date
JPH0423828B2 (zh) 1992-04-23

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