JPS5952878A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5952878A
JPS5952878A JP57163462A JP16346282A JPS5952878A JP S5952878 A JPS5952878 A JP S5952878A JP 57163462 A JP57163462 A JP 57163462A JP 16346282 A JP16346282 A JP 16346282A JP S5952878 A JPS5952878 A JP S5952878A
Authority
JP
Japan
Prior art keywords
gate electrode
polycrystalline silicon
silicon layer
impurities
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57163462A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0481327B2 (enrdf_load_stackoverflow
Inventor
Noriaki Sato
佐藤　典章
Motoo Nakano
元雄 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57163462A priority Critical patent/JPS5952878A/ja
Publication of JPS5952878A publication Critical patent/JPS5952878A/ja
Publication of JPH0481327B2 publication Critical patent/JPH0481327B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP57163462A 1982-09-20 1982-09-20 半導体装置の製造方法 Granted JPS5952878A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57163462A JPS5952878A (ja) 1982-09-20 1982-09-20 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57163462A JPS5952878A (ja) 1982-09-20 1982-09-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5952878A true JPS5952878A (ja) 1984-03-27
JPH0481327B2 JPH0481327B2 (enrdf_load_stackoverflow) 1992-12-22

Family

ID=15774333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57163462A Granted JPS5952878A (ja) 1982-09-20 1982-09-20 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5952878A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60244074A (ja) * 1984-05-18 1985-12-03 Fujitsu Ltd 半導体装置及びその製造方法
JPS60245176A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd Ｍｉｓ型電界効果トランジスタの製造方法
JPS6229169A (ja) * 1985-07-30 1987-02-07 Sony Corp Ｍｏｓ半導体装置の製造方法
JPS6342161A (ja) * 1986-08-07 1988-02-23 Toshiba Corp Ｃｍｏｓ型半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5283073A (en) * 1975-12-29 1977-07-11 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS57106169A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5283073A (en) * 1975-12-29 1977-07-11 Matsushita Electric Ind Co Ltd Production of semiconductor device
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS57106169A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60244074A (ja) * 1984-05-18 1985-12-03 Fujitsu Ltd 半導体装置及びその製造方法
JPS60245176A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd Ｍｉｓ型電界効果トランジスタの製造方法
JPS6229169A (ja) * 1985-07-30 1987-02-07 Sony Corp Ｍｏｓ半導体装置の製造方法
JPS6342161A (ja) * 1986-08-07 1988-02-23 Toshiba Corp Ｃｍｏｓ型半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0481327B2 (enrdf_load_stackoverflow) 1992-12-22

Similar Documents

Publication Publication Date Title
US4268321A (en) Method of fabricating a semiconductor device having channel stoppers
US4502202A (en) Method for fabricating overlaid device in stacked CMOS
JP3474589B2 (ja) 相補型ｍｉｓトランジスタ装置
US4103415A (en) Insulated-gate field-effect transistor with self-aligned contact hole to source or drain
EP0036573A2 (en) Method for making a polysilicon conductor structure
JPS63502633A (ja) 積層ｍｏｓ装置のための製造方法
US4169270A (en) Insulated-gate field-effect transistor with self-aligned contact hole to source or drain
US5153146A (en) Maufacturing method of semiconductor devices
EP0023528A1 (en) Double diffused transistor structure and method of making same
JPS5952878A (ja) 半導体装置の製造方法
US6329249B1 (en) Method for fabricating a semiconductor device having different gate oxide layers
JPH0231468A (ja) 浮遊ゲート型半導体記憶装置の製造方法
JPH0778979A (ja) 半導体装置の製造方法
JPS59231863A (ja) 絶縁ゲ−ト半導体装置とその製造法
KR0170338B1 (ko) 반도체 장치의 게이트 패턴 형성방법
KR100298430B1 (ko) 반도체소자의제조방법
JPS6039868A (ja) 半導体装置の製造方法
JPH0369137A (ja) 半導体集積回路の製造方法
KR960012262B1 (ko) 모스(mos) 트랜지스터 제조방법
KR890003216B1 (ko) 디램셀의 제조방법
KR100223795B1 (ko) 반도체소자제조방법
JPH04360539A (ja) 半導体装置の製造方法
JPS6395664A (ja) 半導体装置の製造方法
JPS6092657A (ja) 半導体装置
JPS6129151B2 (enrdf_load_stackoverflow)