JPS5947478B2 - 半導体発光ダイオ−ド及び製造方法 - Google Patents

半導体発光ダイオ−ド及び製造方法

Info

Publication number
JPS5947478B2
JPS5947478B2 JP49059386A JP5938674A JPS5947478B2 JP S5947478 B2 JPS5947478 B2 JP S5947478B2 JP 49059386 A JP49059386 A JP 49059386A JP 5938674 A JP5938674 A JP 5938674A JP S5947478 B2 JPS5947478 B2 JP S5947478B2
Authority
JP
Japan
Prior art keywords
layer
epitaxial
liquid phase
light emitting
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49059386A
Other languages
English (en)
Japanese (ja)
Other versions
JPS50157084A (enrdf_load_stackoverflow
Inventor
アレクサンドロウイツチ シヤルマカドゼ レバズ
イラクリエウイツチ チコバニ ラフアエル
イワノウイツチ アルフエロフ ゾレス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP49059386A priority Critical patent/JPS5947478B2/ja
Publication of JPS50157084A publication Critical patent/JPS50157084A/ja
Publication of JPS5947478B2 publication Critical patent/JPS5947478B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP49059386A 1974-05-28 1974-05-28 半導体発光ダイオ−ド及び製造方法 Expired JPS5947478B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49059386A JPS5947478B2 (ja) 1974-05-28 1974-05-28 半導体発光ダイオ−ド及び製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49059386A JPS5947478B2 (ja) 1974-05-28 1974-05-28 半導体発光ダイオ−ド及び製造方法

Publications (2)

Publication Number Publication Date
JPS50157084A JPS50157084A (enrdf_load_stackoverflow) 1975-12-18
JPS5947478B2 true JPS5947478B2 (ja) 1984-11-19

Family

ID=13111780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49059386A Expired JPS5947478B2 (ja) 1974-05-28 1974-05-28 半導体発光ダイオ−ド及び製造方法

Country Status (1)

Country Link
JP (1) JPS5947478B2 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111275A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
JPS56111279A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
JPS56111277A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
JPS56111278A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
JPS56111276A (en) * 1980-02-07 1981-09-02 Semiconductor Res Found Luminous semiconductor device
JP2621850B2 (ja) * 1984-03-16 1997-06-18 株式会社東芝 発光ダイオード
JPS61183977A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 発光素子及びその製造方法
JPS6435968A (en) * 1987-07-30 1989-02-07 Mitsubishi Monsanto Chem Gallium arsenide/aluminum mixed crystal epitaxial wafer

Also Published As

Publication number Publication date
JPS50157084A (enrdf_load_stackoverflow) 1975-12-18

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