JPS5946078A - 磁気抵抗効果素子 - Google Patents
磁気抵抗効果素子Info
- Publication number
- JPS5946078A JPS5946078A JP57156303A JP15630382A JPS5946078A JP S5946078 A JPS5946078 A JP S5946078A JP 57156303 A JP57156303 A JP 57156303A JP 15630382 A JP15630382 A JP 15630382A JP S5946078 A JPS5946078 A JP S5946078A
- Authority
- JP
- Japan
- Prior art keywords
- effect element
- nickel
- copper
- magnetoresistance effect
- magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000694 effects Effects 0.000 title claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 230000005294 ferromagnetic effect Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910001004 magnetic alloy Inorganic materials 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910017709 Ni Co Inorganic materials 0.000 description 3
- 229910003267 Ni-Co Inorganic materials 0.000 description 3
- 229910003262 Ni‐Co Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NCYVXEGFNDZQCU-UHFFFAOYSA-N nikethamide Chemical compound CCN(CC)C(=O)C1=CC=CN=C1 NCYVXEGFNDZQCU-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156303A JPS5946078A (ja) | 1982-09-08 | 1982-09-08 | 磁気抵抗効果素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156303A JPS5946078A (ja) | 1982-09-08 | 1982-09-08 | 磁気抵抗効果素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5946078A true JPS5946078A (ja) | 1984-03-15 |
| JPH028469B2 JPH028469B2 (enExample) | 1990-02-23 |
Family
ID=15624855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57156303A Granted JPS5946078A (ja) | 1982-09-08 | 1982-09-08 | 磁気抵抗効果素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5946078A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5903708A (en) * | 1994-05-30 | 1999-05-11 | Sony Corporation | Magneto-resistance effect device with improved thermal resistance |
-
1982
- 1982-09-08 JP JP57156303A patent/JPS5946078A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5903708A (en) * | 1994-05-30 | 1999-05-11 | Sony Corporation | Magneto-resistance effect device with improved thermal resistance |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH028469B2 (enExample) | 1990-02-23 |
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