JPS5941869A - 半導体装置の製法 - Google Patents

半導体装置の製法

Info

Publication number
JPS5941869A
JPS5941869A JP57051383A JP5138382A JPS5941869A JP S5941869 A JPS5941869 A JP S5941869A JP 57051383 A JP57051383 A JP 57051383A JP 5138382 A JP5138382 A JP 5138382A JP S5941869 A JPS5941869 A JP S5941869A
Authority
JP
Japan
Prior art keywords
melting point
layer
oxide film
point metal
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57051383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0216576B2 (enrdf_load_stackoverflow
Inventor
Oku Kuraki
億 久良木
Hideo Oikawa
及川　秀男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57051383A priority Critical patent/JPS5941869A/ja
Priority to US06/479,135 priority patent/US4557036A/en
Priority to FR8305262A priority patent/FR2524709B1/fr
Priority to DE19833311635 priority patent/DE3311635A1/de
Publication of JPS5941869A publication Critical patent/JPS5941869A/ja
Publication of JPH0216576B2 publication Critical patent/JPH0216576B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57051383A 1982-03-31 1982-03-31 半導体装置の製法 Granted JPS5941869A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57051383A JPS5941869A (ja) 1982-03-31 1982-03-31 半導体装置の製法
US06/479,135 US4557036A (en) 1982-03-31 1983-03-25 Semiconductor device and process for manufacturing the same
FR8305262A FR2524709B1 (fr) 1982-03-31 1983-03-30 Dispositif a semi-conducteur et procede pour sa fabrication
DE19833311635 DE3311635A1 (de) 1982-03-31 1983-03-30 Halbleiterbauelement und verfahren zu dessen herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57051383A JPS5941869A (ja) 1982-03-31 1982-03-31 半導体装置の製法

Publications (2)

Publication Number Publication Date
JPS5941869A true JPS5941869A (ja) 1984-03-08
JPH0216576B2 JPH0216576B2 (enrdf_load_stackoverflow) 1990-04-17

Family

ID=12885419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57051383A Granted JPS5941869A (ja) 1982-03-31 1982-03-31 半導体装置の製法

Country Status (1)

Country Link
JP (1) JPS5941869A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0216576B2 (enrdf_load_stackoverflow) 1990-04-17

Similar Documents

Publication Publication Date Title
US4557036A (en) Semiconductor device and process for manufacturing the same
KR920005320B1 (ko) 캐패시터 및 그 제조방법
JPS5863174A (ja) 導電性構造体の形成方法
US4708904A (en) Semiconductor device and a method of manufacturing the same
US5003375A (en) MIS type semiconductor integrated circuit device having a refractory metal gate electrode and refractory metal silicide film covering the gate electrode
WO1993013555A1 (en) Semiconductor device
JPS5941869A (ja) 半導体装置の製法
JPH0296374A (ja) 半導体装置およびその製造方法
JPH0277162A (ja) 半導体装置の製造方法
JPS5910271A (ja) 半導体装置
JPH0329189B2 (enrdf_load_stackoverflow)
JP3504211B2 (ja) 半導体装置の製造方法
JPH0864801A (ja) 炭化けい素半導体素子およびその製造方法
JPS60193333A (ja) 半導体装置の製造方法
JP2918914B2 (ja) 半導体装置及びその製造方法
JPH0682668B2 (ja) 半導体装置の製造方法
JPS624371A (ja) 耐熱金属珪化物を用いてｖｌｓｉ回路を製造する方法
JPS61267365A (ja) 半導体装置
JPH0460335B2 (enrdf_load_stackoverflow)
JP2857170B2 (ja) 半導体装置の製造方法
JPH0654775B2 (ja) 半導体装置の製造方法
JPS60234364A (ja) 半導体装置
JPH0529343A (ja) 微細半導体装置の製造方法
JPS5966165A (ja) 電極配線およびその製造方法
JPS603779B2 (ja) 半導体装置の製造方法