JPH0460335B2 - - Google Patents

Info

Publication number
JPH0460335B2
JPH0460335B2 JP58072923A JP7292383A JPH0460335B2 JP H0460335 B2 JPH0460335 B2 JP H0460335B2 JP 58072923 A JP58072923 A JP 58072923A JP 7292383 A JP7292383 A JP 7292383A JP H0460335 B2 JPH0460335 B2 JP H0460335B2
Authority
JP
Japan
Prior art keywords
layer
melting point
point metal
high melting
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58072923A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59200417A (ja
Inventor
Oku Kuraki
Hideo Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7292383A priority Critical patent/JPS59200417A/ja
Publication of JPS59200417A publication Critical patent/JPS59200417A/ja
Publication of JPH0460335B2 publication Critical patent/JPH0460335B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP7292383A 1983-04-27 1983-04-27 半導体装置の製造方法 Granted JPS59200417A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7292383A JPS59200417A (ja) 1983-04-27 1983-04-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7292383A JPS59200417A (ja) 1983-04-27 1983-04-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59200417A JPS59200417A (ja) 1984-11-13
JPH0460335B2 true JPH0460335B2 (enrdf_load_stackoverflow) 1992-09-25

Family

ID=13503354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7292383A Granted JPS59200417A (ja) 1983-04-27 1983-04-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59200417A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752727B2 (ja) * 1986-02-06 1995-06-05 日本電信電話株式会社 半導体装置の製法
FR2922364B1 (fr) * 2007-10-12 2014-08-22 Saint Gobain Procede de fabrication d'une electrode en oxyde de molybdene
CN116848622A (zh) * 2021-02-24 2023-10-03 Imec非营利协会 一种用于蚀刻钼的方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2745543B2 (ja) * 1988-07-05 1998-04-28 ブラザー工業株式会社 画像形成装置

Also Published As

Publication number Publication date
JPS59200417A (ja) 1984-11-13

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