JPS59200417A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59200417A JPS59200417A JP7292383A JP7292383A JPS59200417A JP S59200417 A JPS59200417 A JP S59200417A JP 7292383 A JP7292383 A JP 7292383A JP 7292383 A JP7292383 A JP 7292383A JP S59200417 A JPS59200417 A JP S59200417A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- melting point
- high melting
- silicon
- point metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000002844 melting Methods 0.000 claims abstract description 61
- 230000008018 melting Effects 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 20
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 20
- 239000012298 atmosphere Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 239000003870 refractory metal Substances 0.000 claims 5
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 229910052755 nonmetal Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 21
- 230000001590 oxidative effect Effects 0.000 abstract description 6
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 99
- 230000003647 oxidation Effects 0.000 description 34
- 238000007254 oxidation reaction Methods 0.000 description 34
- 230000007547 defect Effects 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000007800 oxidant agent Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 241000272201 Columbiformes Species 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 210000004907 gland Anatomy 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 101100136092 Drosophila melanogaster peng gene Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- YFELMWJRIDJCTN-UHFFFAOYSA-N [O-2].[Fe+2].[Si+4].[O-2].[O-2] Chemical compound [O-2].[Fe+2].[Si+4].[O-2].[O-2] YFELMWJRIDJCTN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 235000015096 spirit Nutrition 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7292383A JPS59200417A (ja) | 1983-04-27 | 1983-04-27 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7292383A JPS59200417A (ja) | 1983-04-27 | 1983-04-27 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59200417A true JPS59200417A (ja) | 1984-11-13 |
| JPH0460335B2 JPH0460335B2 (enrdf_load_stackoverflow) | 1992-09-25 |
Family
ID=13503354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7292383A Granted JPS59200417A (ja) | 1983-04-27 | 1983-04-27 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59200417A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183114A (ja) * | 1986-02-06 | 1987-08-11 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製法 |
| JP2011501404A (ja) * | 2007-10-12 | 2011-01-06 | サン−ゴバン グラス フランス | 酸化モリブデンで作られた電極を製造する方法 |
| JP2024508787A (ja) * | 2021-02-24 | 2024-02-28 | アイメック・ヴェーゼットウェー | モリブデンをエッチングする方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0216576A (ja) * | 1988-07-05 | 1990-01-19 | Brother Ind Ltd | 画像形成装置 |
-
1983
- 1983-04-27 JP JP7292383A patent/JPS59200417A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0216576A (ja) * | 1988-07-05 | 1990-01-19 | Brother Ind Ltd | 画像形成装置 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183114A (ja) * | 1986-02-06 | 1987-08-11 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製法 |
| JP2011501404A (ja) * | 2007-10-12 | 2011-01-06 | サン−ゴバン グラス フランス | 酸化モリブデンで作られた電極を製造する方法 |
| JP2024508787A (ja) * | 2021-02-24 | 2024-02-28 | アイメック・ヴェーゼットウェー | モリブデンをエッチングする方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0460335B2 (enrdf_load_stackoverflow) | 1992-09-25 |
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