JPS5941839A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS5941839A
JPS5941839A JP57151507A JP15150782A JPS5941839A JP S5941839 A JPS5941839 A JP S5941839A JP 57151507 A JP57151507 A JP 57151507A JP 15150782 A JP15150782 A JP 15150782A JP S5941839 A JPS5941839 A JP S5941839A
Authority
JP
Japan
Prior art keywords
pattern
forming
mask
insulating layer
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57151507A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0367335B2 (enExample
Inventor
Mikio Segawa
幹雄 瀬川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57151507A priority Critical patent/JPS5941839A/ja
Publication of JPS5941839A publication Critical patent/JPS5941839A/ja
Publication of JPH0367335B2 publication Critical patent/JPH0367335B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP57151507A 1982-08-31 1982-08-31 パタ−ン形成方法 Granted JPS5941839A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57151507A JPS5941839A (ja) 1982-08-31 1982-08-31 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57151507A JPS5941839A (ja) 1982-08-31 1982-08-31 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS5941839A true JPS5941839A (ja) 1984-03-08
JPH0367335B2 JPH0367335B2 (enExample) 1991-10-22

Family

ID=15520015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57151507A Granted JPS5941839A (ja) 1982-08-31 1982-08-31 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS5941839A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194627A (ja) * 1986-02-20 1987-08-27 Fujitsu Ltd 半導体装置の製造方法
JP2005257712A (ja) * 2004-03-09 2005-09-22 Hoya Corp グレートーンマスク及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713180A (en) * 1980-06-25 1982-01-23 Fujitsu Ltd Etching method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713180A (en) * 1980-06-25 1982-01-23 Fujitsu Ltd Etching method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194627A (ja) * 1986-02-20 1987-08-27 Fujitsu Ltd 半導体装置の製造方法
JP2005257712A (ja) * 2004-03-09 2005-09-22 Hoya Corp グレートーンマスク及びその製造方法

Also Published As

Publication number Publication date
JPH0367335B2 (enExample) 1991-10-22

Similar Documents

Publication Publication Date Title
JP2964537B2 (ja) 半導体装置およびその製造方法
JPS60130144A (ja) 相互接続用スタツド構造体形成方法
JPH0226392B2 (enExample)
US4172758A (en) Magnetic bubble domain device fabrication technique
US4317700A (en) Method of fabrication of planar bubble domain device structures
JPS61242044A (ja) 半導体装置の製造方法
JPS5941839A (ja) パタ−ン形成方法
JP2000058549A (ja) 集積回路配線の形成方法
JPS6265346A (ja) 半導体装置の製造方法
CA1088382A (en) Method of making a large scale integrated device having a planar surface
JPH05206292A (ja) 半導体集積回路
JPH04287326A (ja) 半導体装置およびその製造方法
JPS6260241A (ja) 多層配線構造の製造方法
JPH0570301B2 (enExample)
JPS6329549A (ja) 多層配線構造
JPH02296329A (ja) 半導体装置
JPH103613A (ja) 薄膜磁気ヘッド及びその製造方法
JPH01144656A (ja) 多層配線構造およびその製造方法
JPH01189939A (ja) 半導体集積回路
JPS61189654A (ja) 多層配線構造の形成方法
JPH05143930A (ja) 薄膜磁気ヘツドの製造方法
JP2699498B2 (ja) 半導体装置の製造方法
JPH06338030A (ja) 水平型薄膜磁気ヘッドの製造方法
JPH0267730A (ja) 半導体装置
JPH04364042A (ja) 半導体集積回路装置