JPS594068A - 集積回路 - Google Patents

集積回路

Info

Publication number
JPS594068A
JPS594068A JP57113137A JP11313782A JPS594068A JP S594068 A JPS594068 A JP S594068A JP 57113137 A JP57113137 A JP 57113137A JP 11313782 A JP11313782 A JP 11313782A JP S594068 A JPS594068 A JP S594068A
Authority
JP
Japan
Prior art keywords
region
layer
voltage
integrated circuit
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57113137A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244426B2 (enExample
Inventor
Kunihiko Goto
邦彦 後藤
Tadahiro Saito
斎藤　忠弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57113137A priority Critical patent/JPS594068A/ja
Publication of JPS594068A publication Critical patent/JPS594068A/ja
Publication of JPS6244426B2 publication Critical patent/JPS6244426B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57113137A 1982-06-30 1982-06-30 集積回路 Granted JPS594068A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57113137A JPS594068A (ja) 1982-06-30 1982-06-30 集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57113137A JPS594068A (ja) 1982-06-30 1982-06-30 集積回路

Publications (2)

Publication Number Publication Date
JPS594068A true JPS594068A (ja) 1984-01-10
JPS6244426B2 JPS6244426B2 (enExample) 1987-09-21

Family

ID=14604490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57113137A Granted JPS594068A (ja) 1982-06-30 1982-06-30 集積回路

Country Status (1)

Country Link
JP (1) JPS594068A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6509585B2 (en) * 2000-03-20 2003-01-21 Winbond Electronics Corp. Electrostatic discharge protective device incorporating silicon controlled rectifier devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211880A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211880A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6509585B2 (en) * 2000-03-20 2003-01-21 Winbond Electronics Corp. Electrostatic discharge protective device incorporating silicon controlled rectifier devices

Also Published As

Publication number Publication date
JPS6244426B2 (enExample) 1987-09-21

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