JPS5933837A - 半導体装置表面上への絶縁膜形成法 - Google Patents

半導体装置表面上への絶縁膜形成法

Info

Publication number
JPS5933837A
JPS5933837A JP57143580A JP14358082A JPS5933837A JP S5933837 A JPS5933837 A JP S5933837A JP 57143580 A JP57143580 A JP 57143580A JP 14358082 A JP14358082 A JP 14358082A JP S5933837 A JPS5933837 A JP S5933837A
Authority
JP
Japan
Prior art keywords
insulating film
gas
semiconductor device
temperature
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57143580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6366415B2 (enExample
Inventor
Koichi Wakita
紘一 脇田
Seitaro Matsuo
松尾　誠太郎
Hiroshi Kanbe
神戸　宏
Susumu Hata
進 秦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57143580A priority Critical patent/JPS5933837A/ja
Publication of JPS5933837A publication Critical patent/JPS5933837A/ja
Publication of JPS6366415B2 publication Critical patent/JPS6366415B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
  • Semiconductor Lasers (AREA)
JP57143580A 1982-08-19 1982-08-19 半導体装置表面上への絶縁膜形成法 Granted JPS5933837A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57143580A JPS5933837A (ja) 1982-08-19 1982-08-19 半導体装置表面上への絶縁膜形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57143580A JPS5933837A (ja) 1982-08-19 1982-08-19 半導体装置表面上への絶縁膜形成法

Publications (2)

Publication Number Publication Date
JPS5933837A true JPS5933837A (ja) 1984-02-23
JPS6366415B2 JPS6366415B2 (enExample) 1988-12-20

Family

ID=15342037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57143580A Granted JPS5933837A (ja) 1982-08-19 1982-08-19 半導体装置表面上への絶縁膜形成法

Country Status (1)

Country Link
JP (1) JPS5933837A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6123381A (ja) * 1984-07-11 1986-01-31 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザの製法
JPS6350027A (ja) * 1986-08-20 1988-03-02 Sanyo Electric Co Ltd 窒化シリコン膜形成方法
JPS6350028A (ja) * 1986-08-20 1988-03-02 Fujitsu Ltd 薄膜形成方法
JPS63316442A (ja) * 1987-06-18 1988-12-23 Sanyo Electric Co Ltd 窒化シリコン膜の形成方法
JPS6455871A (en) * 1987-08-26 1989-03-02 Sumitomo Electric Industries Manufacture of self-alignment type gate electrode

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63233712A (ja) * 1987-03-20 1988-09-29 井関農機株式会社 苗植機

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6123381A (ja) * 1984-07-11 1986-01-31 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザの製法
JPS6350027A (ja) * 1986-08-20 1988-03-02 Sanyo Electric Co Ltd 窒化シリコン膜形成方法
JPS6350028A (ja) * 1986-08-20 1988-03-02 Fujitsu Ltd 薄膜形成方法
JPS63316442A (ja) * 1987-06-18 1988-12-23 Sanyo Electric Co Ltd 窒化シリコン膜の形成方法
JPS6455871A (en) * 1987-08-26 1989-03-02 Sumitomo Electric Industries Manufacture of self-alignment type gate electrode

Also Published As

Publication number Publication date
JPS6366415B2 (enExample) 1988-12-20

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