JPS5932163A - Ｃｍｏｓ集積回路 - Google Patents

Ｃｍｏｓ集積回路

Info

Publication number
JPS5932163A
JPS5932163A JP57142847A JP14284782A JPS5932163A JP S5932163 A JPS5932163 A JP S5932163A JP 57142847 A JP57142847 A JP 57142847A JP 14284782 A JP14284782 A JP 14284782A JP S5932163 A JPS5932163 A JP S5932163A
Authority
JP
Japan
Prior art keywords
type
substrate
layer
region
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57142847A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6255309B2 (de
Inventor
Keimei Mikoshiba
御子柴　啓明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57142847A priority Critical patent/JPS5932163A/ja
Publication of JPS5932163A publication Critical patent/JPS5932163A/ja
Publication of JPS6255309B2 publication Critical patent/JPS6255309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57142847A 1982-08-18 1982-08-18 Ｃｍｏｓ集積回路 Granted JPS5932163A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57142847A JPS5932163A (ja) 1982-08-18 1982-08-18 Ｃｍｏｓ集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57142847A JPS5932163A (ja) 1982-08-18 1982-08-18 Ｃｍｏｓ集積回路

Publications (2)

Publication Number Publication Date
JPS5932163A true JPS5932163A (ja) 1984-02-21
JPS6255309B2 JPS6255309B2 (de) 1987-11-19

Family

ID=15324991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57142847A Granted JPS5932163A (ja) 1982-08-18 1982-08-18 Ｃｍｏｓ集積回路

Country Status (1)

Country Link
JP (1) JPS5932163A (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260144A (ja) * 1984-06-06 1985-12-23 Sony Corp 半導体装置
US4683488A (en) * 1984-03-29 1987-07-28 Hughes Aircraft Company Latch-up resistant CMOS structure for VLSI including retrograded wells
JPH01101662A (ja) * 1987-09-18 1989-04-19 Sgs Thomson Microelectron Inc Ｃｍｏｓ集積回路デバイスの製造方法
JPH0298168A (ja) * 1988-10-04 1990-04-10 Nec Corp 半導体装置
EP0827205A2 (de) * 1996-08-29 1998-03-04 Sharp Kabushiki Kaisha Herstellungsverfahren für eine Halbleiteranordnung
KR100415085B1 (ko) * 2001-06-28 2004-01-13 주식회사 하이닉스반도체 래치업을 방지할 수 있는 반도체장치의 제조방법
JP2012253276A (ja) * 2011-06-06 2012-12-20 Renesas Electronics Corp 半導体装置、半導体装置の製造方法、電子装置、及び車両

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5237755A (en) * 1974-11-18 1977-03-23 Ampex Frequency modulator
JPS5480091A (en) * 1977-12-08 1979-06-26 Nec Corp Manufacture of complementary field effect semiconductor device
JPS55154748A (en) * 1979-05-23 1980-12-02 Toshiba Corp Complementary mos semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5237755A (en) * 1974-11-18 1977-03-23 Ampex Frequency modulator
JPS5480091A (en) * 1977-12-08 1979-06-26 Nec Corp Manufacture of complementary field effect semiconductor device
JPS55154748A (en) * 1979-05-23 1980-12-02 Toshiba Corp Complementary mos semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4683488A (en) * 1984-03-29 1987-07-28 Hughes Aircraft Company Latch-up resistant CMOS structure for VLSI including retrograded wells
JPS60260144A (ja) * 1984-06-06 1985-12-23 Sony Corp 半導体装置
JPH01101662A (ja) * 1987-09-18 1989-04-19 Sgs Thomson Microelectron Inc Ｃｍｏｓ集積回路デバイスの製造方法
JPH0298168A (ja) * 1988-10-04 1990-04-10 Nec Corp 半導体装置
EP0827205A2 (de) * 1996-08-29 1998-03-04 Sharp Kabushiki Kaisha Herstellungsverfahren für eine Halbleiteranordnung
EP0827205A3 (de) * 1996-08-29 1998-09-23 Sharp Kabushiki Kaisha Herstellungsverfahren für eine Halbleiteranordnung
KR100415085B1 (ko) * 2001-06-28 2004-01-13 주식회사 하이닉스반도체 래치업을 방지할 수 있는 반도체장치의 제조방법
JP2012253276A (ja) * 2011-06-06 2012-12-20 Renesas Electronics Corp 半導体装置、半導体装置の製造方法、電子装置、及び車両
US9082835B2 (en) 2011-06-06 2015-07-14 Renesas Electronics Corporation Semiconductor device, manufacturing method thereof, electronic device and vehicle
US9362396B2 (en) 2011-06-06 2016-06-07 Renesas Electronics Corporation Semiconductor device, manufacturing method thereof, electronic device and vehicle
TWI548091B (zh) * 2011-06-06 2016-09-01 瑞薩電子股份有限公司 半導體裝置、半導體裝置之製造方法、電子裝置及車輛

Also Published As

Publication number Publication date
JPS6255309B2 (de) 1987-11-19

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