JPS5931226B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5931226B2
JPS5931226B2 JP49045228A JP4522874A JPS5931226B2 JP S5931226 B2 JPS5931226 B2 JP S5931226B2 JP 49045228 A JP49045228 A JP 49045228A JP 4522874 A JP4522874 A JP 4522874A JP S5931226 B2 JPS5931226 B2 JP S5931226B2
Authority
JP
Japan
Prior art keywords
silicon
silicon layer
sapphire substrate
semiconductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49045228A
Other languages
English (en)
Japanese (ja)
Other versions
JPS50141283A (enrdf_load_stackoverflow
Inventor
邦幸 浜野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP49045228A priority Critical patent/JPS5931226B2/ja
Publication of JPS50141283A publication Critical patent/JPS50141283A/ja
Publication of JPS5931226B2 publication Critical patent/JPS5931226B2/ja
Expired legal-status Critical Current

Links

JP49045228A 1974-04-22 1974-04-22 半導体装置 Expired JPS5931226B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49045228A JPS5931226B2 (ja) 1974-04-22 1974-04-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49045228A JPS5931226B2 (ja) 1974-04-22 1974-04-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS50141283A JPS50141283A (enrdf_load_stackoverflow) 1975-11-13
JPS5931226B2 true JPS5931226B2 (ja) 1984-07-31

Family

ID=12713393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49045228A Expired JPS5931226B2 (ja) 1974-04-22 1974-04-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS5931226B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51121270A (en) * 1975-04-17 1976-10-23 Seiko Epson Corp Semiconductor device
JPS52115667A (en) * 1976-03-25 1977-09-28 Agency Of Ind Science & Technol Semiconductor device
JPS5317068A (en) * 1976-07-30 1978-02-16 Fujitsu Ltd Semiconductor device and its production
JPS5843570A (ja) * 1981-09-09 1983-03-14 Toshiba Corp 半導体装置とその製造方法
JPS5884422A (ja) * 1981-11-13 1983-05-20 Oki Electric Ind Co Ltd 半導体回路装置の製造方法
JPS6169145A (ja) * 1984-09-12 1986-04-09 Toshiba Corp 半導体基体の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5438452B2 (enrdf_load_stackoverflow) * 1972-06-09 1979-11-21

Also Published As

Publication number Publication date
JPS50141283A (enrdf_load_stackoverflow) 1975-11-13

Similar Documents

Publication Publication Date Title
JPS61214555A (ja) 半導体装置
US4057824A (en) P+ Silicon integrated circuit interconnection lines
JPH0638496B2 (ja) 半導体装置
JPS6298642A (ja) 半導体集積回路装置の製造方法
JPS5931226B2 (ja) 半導体装置
JP2543416B2 (ja) 半導体装置
JP2817518B2 (ja) 半導体装置およびその製造方法
JP2900698B2 (ja) 絶縁形電界効果トランジスタの製造方法
JPS5816341B2 (ja) 半導体装置の製造方法
JPH0575041A (ja) Cmos半導体装置
JPS63165A (ja) 半導体装置の製造方法
JPS6028141B2 (ja) 半導体装置の製法
JPS59169179A (ja) 半導体集積回路装置
JPH06163576A (ja) 半導体装置の製造方法
JPS6117154B2 (enrdf_load_stackoverflow)
JPH0127596B2 (enrdf_load_stackoverflow)
JPH05121734A (ja) 半導体装置及びその製造方法
JP2710356B2 (ja) 半導体装置
JPS5939905B2 (ja) 半導体装置の製造方法
JPH0582784A (ja) Mis型半導体装置の製造方法
JPS6047749B2 (ja) 半導体装置の製造方法
JPH10173171A (ja) 半導体装置の製造方法および半導体装置
JPS6072271A (ja) 半導体装置の製造方法
JPS63144567A (ja) 半導体装置の製造方法
JPS6255312B2 (enrdf_load_stackoverflow)